There are free radical scavengers of formula (P.sub.m-L).sub.n-T.sub.q. Also provided are negative-working lithographic printing plate precursors comprising a hydrophilic substrate and a NIR photopolymerizable or UV-violet photopolymerizable imageable layer coated on the hydrophilic layer, the imageable layer also being photopolymerizable by visible light, the imageable layer having an outer surface and a thickness, the outer surface of the imageable layer being uniformly, and partially or completely crosslinked down to a depth corresponding to at most about 70% of the thickness of the imageable layer.

A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)−2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

A finished flexo plate with printing dots and non-printing indicia. The printing dots have an elevation above the plate floor sufficient to transfer ink to a substrate in a printing step, whereas the non-printing indicia are configured for persistent readability relative to the plate floor but have a height relative to the plate floor insufficient to transfer ink to the substrate in the printing step. The non-printing indicia define a pattern of alphanumeric characters, non-text graphics, or a combination thereof, and are disposed on the plate floor in the form of areas of presence and absence of polymer defined by structures formed of microdots, each microdot having an elevation relative to the plate floor lower than a printing height.

A method of manufacturing a curved-surface metal line is provided. A three-dimensional structure is formed with a metal member and then fixed together with an insulator. Alternatively, the metal member and the insulator are embedded-formed to jointly form the three-dimensional structure, or the metal member and the insulator are fixed together and then jointly form the three-dimensional structure. Then, a photoresist protection layer is formed outside the metal member, and a selective exposure treatment is performed such that corresponding locations of the photoresist protection layer being exposed is subject to a photochemical reaction. The photoresist protection layer is developed, and after the photoresist protection layer is partially dissolved, portions of the metal member at the corresponding locations are simultaneously exposed. The exposed portions of the metal member are etched, and residual portions of the photoresist protection layer are removed to form the metal line provided on the insulator.

Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method of processing a substrate includes applying a photoresist layer comprising a photoacid generator to on a multi-layer disposed on a substrate, wherein the multi-layer comprises an underlayer formed from an organic material, inorganic material, or a mixture of organic and inorganic materials, exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process, and applying an electric field or a magnetic field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction.

An imprint apparatus performs an imprint process including aligning a substrate and a mold in a state in which the mold is in contact with an imprint material on the substrate and curing the imprint material by light irradiation after the aligning. The apparatus includes a first irradiation unit configured to perform first light irradiation of the imprint material on the substrate before bringing the mold into contact with the imprint material on the substrate for the aligning, a second irradiation unit configured to perform second light irradiation of the imprint material on the substrate in the aligning, and a third irradiation unit configured to perform third light irradiation of the imprint material on the substrate in the curing, wherein an exposure amount by the first light irradiation is determined based on an exposure amount by the second light irradiation.

The present disclosure provides a secondary imaging optical lithography method and apparatus. The method includes: contacting a lithography mask plate with a flexible transparent transfer substrate closely, the flexible transparent transfer substrate comprising a first near-field imaging structure having a photosensitive layer; irradiating the photosensitive layer through the lithography mask plate with a first light source, so as to transfer a pattern of the lithography mask plate to the photosensitive layer; coating a device substrate for fabricating devices with a photoresist; contacting the flexible transparent transfer substrate with the photoresist-coated device substrate closely; irradiating the device substrate through the flexible transparent transfer substrate with a second light source, so as to transfer a pattern of the photosensitive layer to the photoresist of the device substrate; and developing the device substrate comprising an exposed photoresist, so as to obtain a device pattern conforming to the pattern of the lithography mask plate.

A method of processing a substrate, includes emitting light including vacuum ultraviolet light to a front surface of the substrate, which has a resist film formed thereon from a resist material for EUV lithography, before an exposure process in an interior of a processing container.

A method of manufacturing a semiconductor device includes forming a first resist layer over a substrate, and forming a second resist layer over the first resist layer. The second resist layer is patterned to expose a portion of the first resist layer to form a second resist layer pattern. The first resist layer is exposed to extreme ultraviolet (XUV) radiation diffracted by the second resist layer pattern. Portions of the first resist layer exposed to the XUV radiation diffracted by the second resist layer are removed.

A method for making at least one structure having sidewalls with different inclinations includes providing a stack including a substrate having a layer of a positive resin whose tone could be reversed when exposed to an insolation dose D<Dinversion, the patterns exposed to the dose Dinversion not being sensitive to creeping at the glass-transition temperature Tfluage of the resin; forming a non-sensitive first pattern by exposing the resin to a first dose D1≥Dinversion, the first pattern having a first sidewall having a first inclination; and forming a creep-sensitive second pattern by exposing the resin to a second dose D2<Dinversion. Creeping is performed by applying a temperature T≥Tfluage to make the second pattern creep over a portion of the first pattern by leaving uncovered at least partially the first sidewall of the first pattern, and defining at least one second sidewall having a second inclination different from the first inclination.