G03F7/2035

Lock-Release Polymerization
20170306103 · 2017-10-26 ·

Techniques are provided to independently control 3D shape and chemistry of rapidly produced colloids. A pre-polymer mixture including a monomer is made to flow into a channel with insular relief in a wall at a known location of the channel. A stimulus that polymerizes the pre-polymer mixture is directed onto the known location to form a structure locked in place at the known location by the insular relief. A pressure is applied to the channel that is sufficient to deflect the wall having the insular relief sufficiently to release a hydrogel particle comprising the structure.

EXPOSURE METHOD, EXPOSURE EQUIPMENT AND 3-D STRUCTURE
20170293226 · 2017-10-12 ·

An exposure method is provided. The exposure method includes coating a photo-curable material on a substrate, and exposing a portion of the photo-curable material by providing a first light source through an optical fiber to form a first photo-cured material. The optical fiber includes a light output end and a cone portion that tapers toward the light output end. The photo-curable material not exposed by the first light source is removed while leaving the first photo-cured material. Exposure equipment for performing the exposure method and a 3-dimensional structure formed thereby are also described.

ETCHING AND THINNING FOR THE FABRICATION OF LITHOGRAPHICALLY PATTERNED DIAMOND NANOSTRUCTURES
20210399708 · 2021-12-23 · ·

A back side of a diamond or other substrate is thinned using plasma etches and a mask situated away from the back side by a spacer having a thickness between 50 μm and 250 μm. Typically, a combined RIE/ICP etch is used to thin the substrate from 20-40 μm to less than 1 μm. For applications in which color centers are implanted or otherwise situated on a front side of the diamond substrate, after thinning, a soft graded etch is applied to reduce color center linewidth, particularly for nitrogen vacancy (NV) color centers.

SYSTEMS AND METHODS FOR COMBINED RADIATION AND FUNCTIONAL LAYER APPLICATION

A combined radiation and functional layer application system includes one or more radiation sources and a commonly located functional layer application unit configured to dispose a functional layer over the surface of a fixed target ahead of the radiation sources during relative motion between the target and the radiation sources/application unit. System and method embodiments include those in which the target is stationary or moving, and embodiments in which the functional layer is applied as a liquid or as a solid laminate. Embodiments relate to application of an oxygen-blocking layer of a printing plate prior to exposure to actinic radiation. Certain solid laminate embodiments include a two-roll system for positioning the laminate for cutting adjacent a trailing edge of the plate.

METHOD AND APPARATUS FOR POST EXPOSURE PROCESSING OF PHOTORESIST WAFERS

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

Method and apparatus for post exposure processing of photoresist wafers

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

Photolithography method and system based on high step slope
10816903 · 2020-10-27 · ·

A photolithography system based on a high step slope may include a depositing unit configured to manufacture a sacrificial layer having high step slope on a substrate. The system may also include a coating unit configured to coat a photoresist layer on the sacrificial layer by performing a spin-on PR coating process to form a photolithographic layer. The system may further include a photolithography unit configured to perform one or more photolithography processes to the photolithographic layer. The photolithography unit may comprise a plurality of masks of compensation patterns. The compensation pattern may comprise a slope-top compensation pattern and a slope compensation pattern.

Photomask, laminate comprising photomask, photomask preparation method, pattern forming apparatus using photomask and pattern forming method using photomask
10732500 · 2020-08-04 · ·

The present specification relates to a photomask, a laminate including the photomask, a method for manufacturing the photomask, a device for forming a pattern using the photomask, and a method for forming a pattern using the photomask.

Method and apparatus for post exposure processing of photoresist wafers

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

Method and apparatus for post exposure processing of photoresist wafers

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.