An array of ultraviolet light emitting diodes can cure ultraviolet curable material, such as solder mask or ink, that has been applied to a substrate in connection with fabricating electronic circuit devices. The substrate can be placed in a housing associated with a processing station of a manufacturing operation. A mask or stencil can be positioned adjacent the substrate. The ultraviolet curable material can be applied to the substrate via the mask or stencil, for example using a squeegee. The ultraviolet light emitting diodes can be moved over the substrate to cure the ultraviolet curable material. The substrate with the cured material can be removed from the housing.

An exposure method and an exposure machine according to the present disclosure, which can achieve higher exposure accuracy, belong to the technical field of display. The exposure method comprises the following steps: a mask is placed at a first position above a substrate to be exposed; a first region of a photoresist on the substrate is exposed; the mask is moved to a second position above the substrate; and a second region of the photoresist on the substrate is exposed. As a result, an overlapped region between the first region and the second region of the photoresist is exposed twice. The present disclosure is applicable to the manufacturing of a liquid crystal display device.

The present disclosure provides a mask plate, including a first region corresponding to a GOA region of an array substrate and a second region corresponding to a display region of the array substrate. The first region comprises at least one first aperture, the at least one first aperture is used to form a GI via-hole penetrating through a gate insulating layer at the GOA region, and a gate line is exposed through the GI via-hole. The second region comprises at least one second aperture, the at least one second aperture is a half-tone mask aperture and is used to form a VIA via-hole at the display region, and a source/drain metal layer pattern is exposed through the VIA via-hole.

Certain patternable reflective films are used as masks to make other patterned articles, and one or more initial masks can be used to pattern the patternable reflective films. An exemplary patternable reflective film has an absorption characteristic suitable to, upon exposure to a radiant beam, absorptively heat a portion of the film by an amount sufficient to change a first reflective characteristic to a different second reflective characteristic. The change from the first to the second reflective characteristic is attributable to a change in birefringence of one or more layers or materials of the patternable film. In a related article, a mask is attached to such a patternable reflective film. The mask may have opaque portions and light-transmissive portions. Further, the mask may have light-transmissive portions with structures such as focusing elements and/or prismatic elements.

A stretchable transparency-adjusting film includes an inner elastic part having a three-dimensional network shape and including a first elastomer, an inorganic thin film surrounding the inner elastic part, and an outer elastic part surrounding the inorganic thin film and including a second elastomer. A scattering unit defined by the inner elastic part, the inorganic thin film and the outer elastic part in a cross-section is orientated in an inclined direction to a vertical direction and a horizontal direction.

A semiconductor fabrication apparatus comprising a light source configured to emit light, a substrate stage arranged to receive a substrate exposed to the emitted light, a reticle arranged between the substrate stage and the light source, and a reticle stage arranged to receive the reticle. The reticle stage including a lower plate, an upper plate arranged above the lower plate, an actuator connected to the lower plate configured to move in a direction parallel to the upper plate, a first cable slab arranged between the upper plate and the lower plate and connected to one side of the actuator, and a first cable cover that surrounds an outer periphery of the first cable slab and contacts the lower plate when the first cable slab becomes bent.

A circuit pattern is quickly created or changed by exposing the circuit pattern on a board without using a photo mask on which the circuit pattern is formed. There is provided a circuit pattern manufacturing apparatus including a forming unit that forms a circuit pattern by irradiating, with a light beam, a circuit pattern forming sheet including an insulating sheet base material layer and a mixture layer made of a mixture containing a conductive material and a photo-curing resin. The forming unit includes, as an optical engine, a housing, a laser diode, a prism mirror, an inclined mirror, a bottom mirror, and a driving mirror.

Provided herein are methods of forming and optimizing cured features on a surface including controlling the surface upon which the cured features are applied. Additionally, a system for forming and processing the topographical features on the membrane is also described, along with mechanical features at specific system stations. More particularly, provided herein are methods of forming and optimizing topographical features applied to a membrane surface by controlling the membrane surface and by controlling the direction and magnitude of pressure applied to the membrane (substrate), as well as initially partially curing the topographical features, followed by fully curing of the topographical features to form the membrane having topographical spacing features formed thereon.

Substrate processing techniques to alleviate missing contact holes, scummed contact holes and scummed caused bridging are disclosed. In one embodiment, electromagnetic radiation (EMR) absorbing molecules are utilized in a process that uses an initial patterned exposure followed by a flood exposure. In one embodiment, a Photo-Sensitized Chemically-Amplified Resist (PSCAR) resist process is utilized to form contact holes in which an initial exposure and develop process is performed followed by a flood exposure and a second develop process. In another embodiment, a process is utilized in which precursors of EMR absorbing molecules are incorporated into a layer underlying the resist layer. Thus, enhanced formation of EMR absorbing molecules will result at the interface of the resist layer and the underlying layer.

A resist composition for pattern printing contains a binder, a filler, a thickener, and a polyfunctional (meth)acrylate. The resist composition does not contain a photoinitiator. The resist composition also contains photocatalytic titanium oxide. A method for forming a pattern includes a resist composition that is pattern-wise printed, and then the resist composition is irradiated with an actinic radiation such that seepage of the resist component from an end of the pattern during the pattern formation using the resist composition is suppressed and the seepage portion is decomposed. As a result, it is possible to drastically reduce the seepage without impairing the rheology of the resist composition and additionally, to remove a slightly seeping portion without requiring, for example, a harmful ozone treatment or the like.