A pattern forming method includes the following steps i), ii), and iii); i) a step of forming an actinic ray-sensitive or radiation-sensitive film having a film thickness of more than 9 m and 20 m or less, using an actinic ray-sensitive or radiation-sensitive composition including a solvent (S) satisfying specific conditions; ii) a step of irradiating the actinic ray-sensitive or radiation-sensitive film with actinic rays or radiation; and iii) a step of developing the actinic ray-sensitive or radiation-sensitive film irradiated with actinic rays or radiation, using a developer.

Embodiments of the present disclosure include devices, and methods of making such devices, for delivery of one or more active agents with short or long zero-order release kinetics. Embodiments also include implantable or injectable drug delivery systems capable of controlled release over long periods of time for therapeutic agents.

An actinic ray-sensitive or radiation-sensitive resin composition includes a resin (A) containing a repeating unit represented by General Formula (4) and a crosslinking agent (C) containing a polar group, in which the crosslinking agent (C) is a compound represented by General Formula (1) or a compound in which two to five structures represented by General Formula (1) are connected via a linking group or a single bond represented by L.sub.1 in General Formula (3). ##STR00001##

A method of fabricating a reflective photomask is provided. The method includes sequentially forming a multi-layered reflective layer, an absorption layer and an anti-reflective coating (ARC) layer on a substrate. ARC patterns are formed to expose a portion of the absorption layer by directly irradiating an ion beam onto a portion of the ARC layer to etch the portion of the ARC layer. The exposed portion of the absorption layer is etched using the ARC patterns as etch masks to form absorption patterns exposing a portion of the multi-layered reflective layer.

A method of fabricating a reflective photomask is provided. The method includes sequentially forming a multi-layered reflective layer, an absorption layer and an anti-reflective coating (ARC) layer on a substrate. ARC patterns are formed to expose a portion of the absorption layer by directly irradiating an ion beam onto a portion of the ARC layer to etch the portion of the ARC layer. The exposed portion of the absorption layer is etched using the ARC patterns as etch masks to form absorption patterns exposing a portion of the multi-layered reflective layer.

A substrate processing method includes performing, on a substrate having a resist film formed thereon, a reduction processing of reducing hydrocarbons contained in the resist film. The resist film includes a metal oxide resist, exposed to light, and developed to have a pattern. The method further includes performing a processing of reducing roughness of the resist film after being subjected to the reduction processing.