A method for photon induced material deposition includes providing a first solution, which contains metallate or metal ions, providing a second solution, which contains light sensitive reducing agent, such as semiconductor nanoparticles, mixing the first solution and the second solution to form a reagent on a substrate, and focusing a light source on the reagent to form a mechanically rigid deposition in the focus of the light source.

A device (100) includes a light source (130) and a light guide (110). The light source (130) is configured to emit photoresist-curative electromagnetic radiation. The light guide (110) is arranged to receive the photoresist-curative electromagnetic radiation from the light source (130) and to guide the received radiation by total internal reflection, the light guide (110) including a pattern of emission points (210) on at least one surface of the light guide (110), the emission points (210) emitting the photoresist-curative electromagnetic radiation out of the light guide (110) by frustration of total internal reflection caused by the emission points (210).

The present disclosure relates to a method for at least one of forming a part or modifying a part, and a system therefor. The method involves initially providing a planar structure having a first material layer disposed on a second material layer. A lithographic operation including greyscale printing is performed to produce a resist material layer on the first material layer, with the resist material layer having a predetermined three-dimensional pattern extending along X, Y and Z axes, with features helping to define the three-dimensional pattern having differing dimensions along the Z axis, and which acts as a mask. An etch process is then performed, using the mask provided by the resist material layer, to etch the first material layer to impart the pattern of the mask as an etched pattern into the first material layer in accordance with a predetermined selectivity etching ratio, such that the etched pattern in the first material layer includes features formed with greater dimensions than corresponding features in the mask of the resist material layer.

An information processing method comprising: exposing a correction image displayed on an image display device having a plurality of pixels to a photosensitive recording medium via a limiting member, the limiting member being provided between the image display device and an exposure surface of the photosensitive recording medium and limiting an angle of light emitted from the image display device to the photosensitive recording medium; acquiring recorded image data, which is data of a recorded image recorded on the photosensitive recording medium through the exposure of the correction image; and deriving a correction coefficient K for correcting a pixel value for each pixel of a display image for each pixel of the image display device based on the recorded image data such that the display image including unevenness of which brightness is complementary to unevenness that occur in the recorded image is displayed on the image display device.

A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.

Methods and systems for photopatterning and miniaturization. In some examples, a method for patterning a substrate includes irradiating a pattern onto the substrate with ultraviolet light and heating the substrate, causing the substrate and the pattern to shrink in at least one dimension to form a miniaturized pattern on the substrate. In some examples, a system for patterning a substrate includes an ultraviolet light source, a heater, and a controller configured for irradiating a pattern onto the substrate with ultraviolet light and heating the substrate, causing the substrate and the pattern to shrink in at least one dimension to form a miniaturized pattern on the substrate.

Examples described herein provide a system, a software application, and a method of a lithography process to write multiple tones in a single pass. A system includes a stage and a lithography system. The lithography system includes image projection systems, a controller, and memory. The controller is coupled to the memory, which stores instruction code. Execution of the instruction code by the controller causes the controller to control the stage and the image projection systems to iteratively expose a photoresist supported by the stage and to move the stage relative to the image projection systems a step distance between sequential pairs of the exposures. Each exposure includes using write beam(s) projected from the image projection systems. Each exposure is at a respective one of different dosage amounts. An accumulation of the different dosage amounts is a full tone dosage amount for the photoresist.

The present disclosure provides methods and systems for correcting the shooting of images from a spatial light modulator (SLM) to a substrate, when cross-scan vibrations, including sub-pixel cross-scan vibrations, are present. The methods and systems include shifting a mask pattern on an SLM rotated relative to the in-scan direction of travel on a substrate, shifting along an axis of the SLM to correct for cross-scan vibrations, and either delaying, or accelerating, the shooting of the mask pattern onto the substrate.

A system for effectively curing dry film ink throughout its thickness on circuit boards being made applies an exposure system, a circuit board, and a method for making the circuit board. The exposure system includes a plurality of mixed light sources with different wavelengths within a range of 365 nm to 440 nm, the mixed light sources can output at least three different wavelengths of light each of substantially a single wavelength and a fourth source of light able to output light of a spectrum of wavelengths, the ranges of light being between 365 nm and 440 nm.

A method for the exposure of image points of a photosensitive layer comprising a photosensitive material on a substrate by means of an optical system. The method including continuously moving the image points with respect to the optical system; and controlling a plurality of secondary beams by means of the optical system individually for individual exposures of each image point, whereby the secondary beams are put either into an ON state or into an OFF state, wherein a) secondary beams in the ON state produce an individual exposure of the image point assigned to the respective secondary beam and b) secondary beams in the OFF state do not produce any individual exposure of the image point assigned to the respective secondary beam; wherein, for the generation of image points with grey tones n>1, individual exposures are carried out by different secondary beams with individual doses D.