Embodiments of a photolithographic machine with two or more camera systems (i.e., projection lens systems) are described herein. The photolithographic machine may include two or more cameras independently operated and controlled for exposing integrated circuit, flat panel display, and other substrates used in manufacturing semiconductor electronics. The cameras may be independently controlled to move laterally in the x-axis (i.e., not fixed). The independent control can include movement, focusing, tilt, reticle position, among other things.

Embodiments of a photolithographic machine with two or more camera systems (i.e., projection lens systems) are described herein. The photolithographic machine may include two or more cameras independently operated and controlled for exposing integrated circuit, flat panel display, and other substrates used in manufacturing semiconductor electronics. The cameras may be independently controlled to move laterally in the x-axis (i.e., not fixed). The independent control can include movement, focusing, tilt, reticle position, among other things.

An exposure apparatus including a micro light emitting diode display unit and a first projection optical system is provided. The micro light emitting diode display unit has a plurality of micro light emitting diodes. The micro light emitting diode display unit is adapted to individually control light emission signals of the micro light emitting diodes and forming a predetermined pattern. The first projection optical system is disposed on a light emitting path of the micro light emitting diode display unit. The first projection optical system is configured to form an exposure pattern on a photosensitive material layer at once by applying the predetermined pattern.

An exposure apparatus including a micro light emitting diode display unit and a first projection optical system is provided. The micro light emitting diode display unit has a plurality of micro light emitting diodes. The micro light emitting diode display unit is adapted to individually control light emission signals of the micro light emitting diodes and forming a predetermined pattern. The first projection optical system is disposed on a light emitting path of the micro light emitting diode display unit. The first projection optical system is configured to form an exposure pattern on a photosensitive material layer at once by applying the predetermined pattern.

Embodiments of the present invention provide a roll-to-roll exposure system having a reference mark array and alignment scope units for precisely measuring the position and orientation of an object on a flexible multilayered circuit film. A roll-to-roll exposure system according to an exemplary embodiment of the present invention includes: a plurality of rolls configured to move a flexible multilayered circuit film having an object positioned thereon; alignment scope units positioned so as to be spaced apart from each other and proximate to the rolls; and at least one exposure unit positioned so as to be spaced proximate to the rolls and spaced apart from sides of the alignment scope units, in which one of the rolls has a reference mark array on its surface.

Disclosed herein are methods for patterning two-dimensional atomic layer materials, the methods comprising: illuminating a first location of an optothermal substrate with electromagnetic radiation, wherein the optothermal substrate converts at least a portion of the electromagnetic radiation into thermal energy, and wherein the optothermal substrate is in thermal contact with a two-dimensional atomic layer material; thereby: generating an ablation region at a location of the two-dimensional atomic layer material proximate to the first location of the optothermal substrate, wherein at least a portion of the ablation region has a temperature sufficient to ablate at least a portion of the two-dimensional atomic layer material within the ablation region, thereby patterning the two-dimensional atomic layer material. Also disclosed herein are systems for performing the methods described herein, patterned two-dimensional atomic layer materials made by the methods described herein and methods of use thereof.

Disclosed herein are methods for patterning two-dimensional atomic layer materials, the methods comprising: illuminating a first location of an optothermal substrate with electromagnetic radiation, wherein the optothermal substrate converts at least a portion of the electromagnetic radiation into thermal energy, and wherein the optothermal substrate is in thermal contact with a two-dimensional atomic layer material; thereby: generating an ablation region at a location of the two-dimensional atomic layer material proximate to the first location of the optothermal substrate, wherein at least a portion of the ablation region has a temperature sufficient to ablate at least a portion of the two-dimensional atomic layer material within the ablation region, thereby patterning the two-dimensional atomic layer material. Also disclosed herein are systems for performing the methods described herein, patterned two-dimensional atomic layer materials made by the methods described herein and methods of use thereof.

The present disclosure provides a dual developing method for defining different resist patterns. In the present disclosure, by using a positive-tone development (PTD) process followed by a negative-tone development (NTD) process, and by allowing a first pattern to be transparent under a subsequent second photomask, different patterns can be formed on a same resist layer. As a result, problems encountered in prior art, such as insufficient DOF, formation of abnormal patterns, self-alignment issue, overlying problem and other problems, can be successfully addressed.

The present disclosure provides a dual developing method for defining different resist patterns. In the present disclosure, by using a positive-tone development (PTD) process followed by a negative-tone development (NTD) process, and by allowing a first pattern to be transparent under a subsequent second photomask, different patterns can be formed on a same resist layer. As a result, problems encountered in prior art, such as insufficient DOF, formation of abnormal patterns, self-alignment issue, overlying problem and other problems, can be successfully addressed.

Disclosed herein are methods for patterning two-dimensional atomic layer materials, the methods comprising: illuminating a first location of an optothermal substrate with electromagnetic radiation, wherein the optothermal substrate converts at least a portion of the electromagnetic radiation into thermal energy, and wherein the optothermal substrate is in thermal contact with a two-dimensional atomic layer material; thereby: generating an ablation region at a location of the two-dimensional atomic layer material proximate to the first location of the optothermal substrate, wherein at least a portion of the ablation region has a temperature sufficient to ablate at least a portion of the two-dimensional atomic layer material within the ablation region, thereby patterning the two-dimensional atomic layer material. Also disclosed herein are systems for performing the methods described herein, patterned two-dimensional atomic layer materials made by the methods described herein and methods of use thereof.