An apparatus for processing a substrate includes a process chamber; a support which is placed inside the process chamber and supports the substrate; a fluid supplier which supplies fluid into the process chamber; and a controller configured to perform a compressing step to bring the fluid into a supercritical phase inside the process chamber, in which the compressing step includes a continuous first section and second section, the fluid supplier includes a first portion and a second portion, and the controller supplies the fluid into the process chamber at a first speed during the first section using the first portion, and supplies the fluid into the process chamber at a second speed higher than the first speed during the second section using the second portion.

An apparatus for processing a substrate includes a process chamber; a support which is placed inside the process chamber and supports the substrate; a fluid supplier which supplies fluid into the process chamber; and a controller configured to perform a compressing step to bring the fluid into a supercritical phase inside the process chamber, in which the compressing step includes a continuous first section and second section, the fluid supplier includes a first portion and a second portion, and the controller supplies the fluid into the process chamber at a first speed during the first section using the first portion, and supplies the fluid into the process chamber at a second speed higher than the first speed during the second section using the second portion.

The present disclosure is directed to organotin cluster compounds having formula (I) and their use as photoresists in extreme ultraviolet lithography processes. ##STR00001##

A chemically-amplified negative resist composition includes: (A) a quencher containing an onium salt shown by the following formula (A-1); (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2); and (C) a photo-acid generator which generates an acid. Thus, the present invention provides: a negative resist composition which can form a favorable profile with high sensitivity and low LWR and CDU in a pattern; and a resist patterning process using the composition. ##STR00001##

A new photosensitive resin composition based on a polysiloxane, that is, a negative photosensitive resin composition is provided. A negative photosensitive resin composition includes (A) a polysiloxane compound containing a first structural unit represented by the following general formula (1), (B) a photoinduced curing accelerator, and (C) a solvent.

[(R.sup.x).sub.bR.sup.1.sub.mSiO.sub.n/2]  (1)

An object of the present invention is to provide a pattern forming method with which a pattern having excellent resolution performance and LER performance can be formed. In addition, another object of the present invention is to provide a method for manufacturing an electronic device, an actinic ray-sensitive or radiation-sensitive resin composition, and a resist film.

A pattern forming method of the present invention includes a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, an exposing step of exposing the resist film, and a developing step of positively developing the exposed resist film using an organic solvent-based developer, in which the actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a polar group, a compound including two or more ion pairs which are decomposed by an irradiation with an actinic ray or a radiation and having a molecular weight of 5,000 or less, and a solvent.

A photosensitive material includes: a compound A having a carboxy group, in which the compound A includes a polymer including a repeating unit derived from (meth)acrylic acid, and a content of the carboxy group in a photosensitive layer which is formed from the photosensitive material is reduced by irradiation with an actinic ray or a radiation.

A photosensitive material includes: a compound A having a carboxy group, in which the compound A includes a polymer including a repeating unit derived from (meth)acrylic acid, and a content of the carboxy group in a photosensitive layer which is formed from the photosensitive material is reduced by irradiation with an actinic ray or a radiation.

A metal-containing photoresist developer composition, and a method of forming patterns including a step of developing using the same are provided. The metal-containing photoresist developer composition includes an organic solvent, and a heptagonal ring compound substituted with at least one hydroxy group (—OH). The heptagonal ring compound has at least two double bonds in the ring.

A positive-type photosensitive resin composition comprises a (a) polybenzoxazole precursor, a (b) crosslinking agent, a (c) photosensitive agent, and a (d) solvent, wherein the (a) polybenzoxazole precursor comprises a structure represented by Formula (1) below, and the (c) photosensitive agent is a compound comprising a structure represented by Formula (2) below. In Formula (1), U is a bivalent organic group, a single bond, —O—, or —SO.sub.2—, V is a group comprising an aliphatic structure, and the carbon number in the aliphatic structure is 1 to 30. ##STR00001##