A positive resist composition is provided comprising a base polymer comprising repeat units (a) having two triple bonds and repeat units (b) adapted to increase solubility in an alkaline developer under the action of acid. A pattern of good profile with a high resolution, reduced LWR, and improved CDU is formed therefrom.

A polymer, comprising a first repeating unit derived from a first monomer comprising a single ester acetal group, and a second repeating unit derived from a second monomer comprising a plurality of ester acetal groups.

A compound comprising an aromatic group or a heteroaromatic group, wherein the aromatic group or the heteroaromatic group comprises a first substituent group comprising an ethylenically unsaturated double bond, a second substituent group that is an iodine atom, and a third substituent group comprising an acid-labile group, wherein the first substituent group, the second substituent group, and the third substituent group are each bonded to a different carbon atom of the aromatic group or the heteroaromatic group.

Provided is an actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin including a repeating unit (a) represented by Formula (1); (B) a compound that generates an acid by irradiation with actinic rays or radiation; and (C) an organic solvent. A concentration of solid contents of the actinic ray-sensitive or radiation-sensitive resin composition is 4 mass % or less. (in the formula, R.sub.11 and R.sub.12 each independently represent a hydrogen atom, a halogen atom, or a monovalent organic group. R.sub.13 represents a hydrogen atom, a halogen atom, or a monovalent organic group or is a single bond or an alkylene group, and is bonded to L or Ar in the formula to form a ring. L represents a single bond or a divalent linking group. Ar represents an aromatic ring group. n represents an integer of 2 or more.) ##STR00001##

A radiation-sensitive resin composition comprises: a polymer, and a radiation-sensitive acid generator. The polymer comprises a structural unit comprising: an acid-labile group; and an oxoacid group or phenolic hydroxyl group protected by the acid-labile group. The acid-labile group is represented by formula (1). R.sup.1 and R.sup.2 each independently represent a divalent organic group having 1 to 20 carbon atoms. R.sup.3 represents a monovalent group having 1 to 40 atoms and having at least one selected from the group consisting of an oxygen atom, a sulfur atom and a nitrogen atom. * denotes a binding site to the oxy group in the oxoacid group or phenolic hydroxyl group protected.

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Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

The present invention provides a method for forming an organic film, including: forming a coating film by spin coating of an organic film-forming composition onto a substrate having an uneven pattern, and thereafter subjecting the substrate to a vibration treatment, and after or simultaneously with the vibration treatment, insolubilizing the coating film to an organic solvent to form the organic film. This provides a method for forming an organic film that can fill an uneven pattern on a substrate to highly flatten a substrate at low cost in a production step of a semiconductor apparatus, etc.

The present invention relates to a preparation method for a dry film solder resist (DFSR) capable of forming the DFSR having fine unevenness on a surface by a more simplified method, and a film laminate used therein. The preparation method for a dry film solder resist includes forming a predetermined photo-curable and heat-curable resin composition on a transparent carrier film having a surface on which a fine unevenness having an average roughness (Ra) of 200 nm to 2 μm is formed; laminating the resin composition on a substrate to form a laminated structure in which the substrate, the resin composition, and the transparent carrier film are sequentially formed; exposing the resin composition and delaminating the transparent carrier film; and alkaline-developing the resin composition in a non-exposure part and performing heat-curing.

Disclosed herein are an organic processing liquid for resist film patterning which is capable of suppressing the occurrence of defects in resist patterns, and a pattern forming method. Provided is an organic processing liquid for resist film patterning, which is used to carry out at least one of developing or cleaning of a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, the liquid including an organic solvent, in which the content of an oxidant in the organic processing liquid is 10 mmol/L or less.

A salt having a group represented by the formula (aa):

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wherein X.sup.a and X.sup.b independently each represent an oxygen atom or a sulfur atom,
the ring W represents a C3-C36 heterocyclic ring which has an ester bond or a thioester bond, said heterocyclic ring optionally further having an oxygen atom, a sulfur atom, a carbonyl group or a sulfonyl group each by which a methylene group has been replaced, and said heterocycilic ring optionally having a hydroxyl group, a cyano group, a carboxyl group, a C1-C12 alkyl group, a C1-C12 alkoxy group, a C2-C13 alkoxycarbonyl group, a C2-C13 acyl group, a C2-C13 acyloxy group, a C3-C12 alicyclic hydrocarbon group, a C6-C10 aromatic hydrocarbon group or any combination of these groups each by which a hydrogen atom has been replaced, and
* represents a binding position.