Patent classifications
G03F7/34
NANOIMPRINT COMPOSITION AND PATTERN FORMING METHOD
A nanoimprint composition including an unsaturated acid metal salt (R), a photopolymerizable compound (B), a photoradical polymerization initiator, and a solvent component having compatibility with the unsaturated acid metal salt (R) and the photopolymerizable compound (B), in which a content of the unsaturated acid metal salt (R) is 50 parts by mass or greater with respect to 100 parts by mass of a total content of the unsaturated acid metal salt (R) and the photopolymerizable compound (B).
NANOIMPRINT COMPOSITION AND PATTERN FORMING METHOD
A nanoimprint composition including an unsaturated acid metal salt (R), a photopolymerizable compound (B), a photoradical polymerization initiator, and a solvent component having compatibility with the unsaturated acid metal salt (R) and the photopolymerizable compound (B), in which a content of the unsaturated acid metal salt (R) is 50 parts by mass or greater with respect to 100 parts by mass of a total content of the unsaturated acid metal salt (R) and the photopolymerizable compound (B).
CURABLE COMPOSITION FOR IMPRINTING, COATING FILM, METHOD FOR PRODUCING FILM, CURED PRODUCT, METHOD FOR PRODUCING IMPRINT PATTERN, AND METHOD FOR PRODUCING DEVICE
There are provided a curable composition for imprinting, the curable composition including an organopolysiloxane having a radical polymerizable group, a radical generator, and a compound that has a monovalent hydrocarbon group having 4 to 11 carbon atoms and a poly(oxyalkylene) group, in which some or all of hydrogen atoms of the monovalent hydrocarbon group are optionally substituted with halogen atoms, a coating film of the composition, a method for producing the film, a cured product of the composition, a method for producing an imprint pattern using the composition, and a method for producing a device, the method including the method for producing an imprint pattern.
PHOTORESIST UNDERLAYER COMPOSITION
A photoresist underlayer composition comprising a first polymer comprising a first structural unit derived from an N-(alkoxymethyl) (meth)acrylic amide monomer; a second structural unit comprising an aromatic group, a heterocyclic group, an ester group, an amide group, or a combination thereof, wherein the second structural unit further comprises a crosslinkable group; wherein the first polymer comprises the second structural unit, the photoresist underlayer composition further comprises a second polymer comprising the second structural unit, or a combination thereof, a thermal acid generator; and a solvent.
TRANSFER FILM, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR CIRCUIT WIRE, AND MANUFACTURING METHOD FOR ELECTRONIC DEVICE
The present invention provides a transfer film in which a pattern appearance defect is unlikely to occur, a manufacturing method for a laminate, a manufacturing method for a circuit wire, and a manufacturing method for an electronic device. The transfer film of the present invention includes a temporary support a resin composition layer disposed on the temporary support, in which the resin composition layer contains a resin, and at least one compound selected from the group consisting of a block copolymer, which contains a block consisting of a constitutional unit X having a group represented by Formula (A) or a group represented by Formula (B) and a block a constitutional unit Y having a poly(oxyalkylene) group, and a compound represented by Formula (1).
TRANSFER FILM, MANUFACTURING METHOD FOR LAMINATE, MANUFACTURING METHOD FOR CIRCUIT WIRE, AND MANUFACTURING METHOD FOR ELECTRONIC DEVICE
The present invention provides a transfer film in which a pattern appearance defect is unlikely to occur, a manufacturing method for a laminate, a manufacturing method for a circuit wire, and a manufacturing method for an electronic device. The transfer film of the present invention includes a temporary support a resin composition layer disposed on the temporary support, in which the resin composition layer contains a resin, and at least one compound selected from the group consisting of a block copolymer, which contains a block consisting of a constitutional unit X having a group represented by Formula (A) or a group represented by Formula (B) and a block a constitutional unit Y having a poly(oxyalkylene) group, and a compound represented by Formula (1).
NEGATIVE RESIST FILM LAMINATE AND PATTERN FORMATION METHOD
Provided is a negative resist film laminate comprising a thermoplastic film, which is a first support body, and a negative resist film, wherein the negative resist film contains (A) an alkali-soluble resin having a phenolic hydroxy group, (B) a plasticizer containing polyester, (C) a photoacid generator, (D) an epoxy compound containing on average four or more epoxy groups per molecule, and (E) a benzotriazole compound and/or an imidazole compound.
ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING ELECTROCONDUCTIVE PATTERN
A method for manufacturing an electroconductive pattern 40, provided with: a lamination step for laminating an acid generation film 10 containing an acid proliferation agent and a photoacid generator on a polymer film 20 containing an electroconductive polymer formed on a substrate 21; a masking step for masking the top of the acid generation film 10; a light irradiation step for irradiating the laminate from the acid-generation-film 10 side; a doping step for doping the electroconductive polymer with an acid generated and proliferated in the acid generation film 10 by the light irradiation; and a releasing step for releasing the acid generation film 10 from the polymer film 20. This method makes it possible to provide an electroconductive film and a method for manufacturing an electroconductive pattern in which photoacid generation and acid proliferation effects are utilized.
Monomer, hardmask composition comprising monomer, and pattern forming method using hardmask composition
Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition. ##STR00001## In the above Chemical Formula 1, A, A′ , X, Y, I, m and n are the same as described in the detailed description.
Monomer, hardmask composition comprising monomer, and pattern forming method using hardmask composition
Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition. ##STR00001## In the above Chemical Formula 1, A, A′ , X, Y, I, m and n are the same as described in the detailed description.