A method of manufacturing a semiconductor structure includes the following operations. A photoresist layer is formed on a metal layer, in which the photoresist layer includes an additive selected from the group consisting of a first heterocyclic compound containing a triazole ring, a second heterocyclic compound containing an imidazole ring, biphenyl thiol, biphenyl dithiol, benzenethiol, and benzenedithiol. The photoresist layer is exposed to an actinic radiation. The photoresist layer is developed by a developer to form holes in the photoresist layer. Redistribution lines are formed in the holes by an electroplating process.

A method of manufacturing a semiconductor structure includes the following operations. A photoresist layer is formed on a metal layer, in which the photoresist layer includes an additive selected from the group consisting of a first heterocyclic compound containing a triazole ring, a second heterocyclic compound containing an imidazole ring, biphenyl thiol, biphenyl dithiol, benzenethiol, and benzenedithiol. The photoresist layer is exposed to an actinic radiation. The photoresist layer is developed by a developer to form holes in the photoresist layer. Redistribution lines are formed in the holes by an electroplating process.

Methods for making a semiconductor device using an improved BARC (bottom anti-reflective coating) are provided herein. The improved BARC comprises a polymer formed from at least a styrene monomer having at least one or two hydrophilic substituents. The monomer(s) and substituents can be varied as desired to obtain a balance between film adhesion and wet etch resistance. Also provided is a semiconductor device produced using such methods.

Methods for making a semiconductor device using an improved BARC (bottom anti-reflective coating) are provided herein. The improved BARC comprises a polymer formed from at least a styrene monomer having at least one or two hydrophilic substituents. The monomer(s) and substituents can be varied as desired to obtain a balance between film adhesion and wet etch resistance. Also provided is a semiconductor device produced using such methods.

The present invention provides a photosensitive material with which a film having a low relative permittivity can be formed. In addition, the present invention provides a pattern forming method, a manufacturing method of a circuit wiring, a manufacturing method of a touch panel, and a transfer film, which are related to the photosensitive material.

The photosensitive material of the present invention satisfies at least one requirement of the following requirement (V01) or the following requirement (W01).

(V01) the photosensitive material includes a polymer A having a carboxy group and a compound β which has a structure b0 in which an amount of the carboxy group included in the polymer A is reduced by exposure.

(W01) the photosensitive material includes a polymer Ab0 which is the polymer A and further has the structure b0 in which the amount of the carboxy group included in the polymer A is reduced by exposure.

There are provided a curable composition for imprinting, the curable composition including a polymerizable compound having two or more radical polymerizable groups, a radical polymerization initiator, and at least one compound selected from the group consisting of an organopolysiloxane having only one radical polymerizable group and an organopolysiloxane having no or one radical polymerizable group and having a poly(oxyalkylene) group, a cured product of the curable composition for imprinting, a method for producing an imprint pattern using the curable composition for imprinting, and a method for producing a device, the method including the method for producing an imprint pattern.

There are provided a curable composition for imprinting, the curable composition including a polymerizable compound having two or more radical polymerizable groups, a radical polymerization initiator, and at least one compound selected from the group consisting of an organopolysiloxane having only one radical polymerizable group and an organopolysiloxane having no or one radical polymerizable group and having a poly(oxyalkylene) group, a cured product of the curable composition for imprinting, a method for producing an imprint pattern using the curable composition for imprinting, and a method for producing a device, the method including the method for producing an imprint pattern.

Provided are (1) a composition including an alkali-soluble resin, a polymerizable compound, a photopolymerization initiator, a surfactant, and a solvent, in which a surface tension measured by a Wilhelmy method at 25° C. is 26.5 mN/m or less; (2) a composition including a surfactant and a solvent, in which a surface tension T1 measured by a Wilhelmy method at 25° C. and a surface tension T2 measured by a Wilhelmy method at 25° C. immediately before a timing that a volume reaches 60% of an initial volume in an environment of a temperature of 25° C. and a relative humidity of 60% satisfy a relationship of T1>T2; and (3) applications thereof.

Disclosed herein is a photoresist composition comprising a first polymer comprising an acid labile group; a photoacid generator; and an acid diffusion control agent that comprises a tri-alkyl amide compound having a lipophilicity (log P) value that is greater than 11.

Disclosed herein is a photoresist composition comprising a first polymer comprising an acid labile group; a photoacid generator; and an acid diffusion control agent that comprises a tri-alkyl amide compound having a lipophilicity (log P) value that is greater than 11.