Patent classifications
G03F7/38
METHOD FOR REMOVING FLUOROPOLYMER LIFT-OFF LAYER
The invention pertains to a method of removing a layer of a lift-off fluoropolymer layer from a substrate using a particular stripping solvent, and to a lithographic process using said combination of lift-off fluoropolymer and stripping solvent, in particular for the manufacture of OLED devices.
Photoresist composition, pixel definition structure and manufacturing method thereof, and display panel
Disclosed are a photoresist composition, a pixel definition structure and a manufacturing method thereof, and a display panel. The photoresist composition includes an organic film-forming resin, a superhydrophobic polymerizable monomer, a polyfunctional crosslinkable polymerizable monomer, a photoinitiator, an additive and a solvent.
Photoresist composition, pixel definition structure and manufacturing method thereof, and display panel
Disclosed are a photoresist composition, a pixel definition structure and a manufacturing method thereof, and a display panel. The photoresist composition includes an organic film-forming resin, a superhydrophobic polymerizable monomer, a polyfunctional crosslinkable polymerizable monomer, a photoinitiator, an additive and a solvent.
Positive resist composition and patterning process
A positive resist composition is provided comprising two onium salts, a base polymer comprising acid labile group-containing recurring units, and an organic solvent. The positive resist composition forms a pattern having PED stability and improved properties including DOF, LWR, and controlled footing profile.
NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN STRUCTURE AND METHOD FOR PRODUCING PATTERNED CURED FILM
A new photosensitive resin composition based on a polysiloxane, that is, a negative photosensitive resin composition is provided. A negative photosensitive resin composition includes (A) a polysiloxane compound containing a first structural unit represented by the following general formula (1), (B) a photoinduced curing accelerator, and (C) a solvent.
[(R.sup.x).sub.bR.sup.1.sub.mSiO.sub.n/2] (1)
NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN STRUCTURE AND METHOD FOR PRODUCING PATTERNED CURED FILM
A new photosensitive resin composition based on a polysiloxane, that is, a negative photosensitive resin composition is provided. A negative photosensitive resin composition includes (A) a polysiloxane compound containing a first structural unit represented by the following general formula (1), (B) a photoinduced curing accelerator, and (C) a solvent.
[(R.sup.x).sub.bR.sup.1.sub.mSiO.sub.n/2] (1)
INTEGRATED DRY PROCESSES FOR PATTERNING RADIATION PHOTORESIST PATTERNING
Methods for making thin-films on semiconductor substrates, may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.
INTEGRATED DRY PROCESSES FOR PATTERNING RADIATION PHOTORESIST PATTERNING
Methods for making thin-films on semiconductor substrates, may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.
Salt, acid generator, resist composition and method for producing resist pattern
A salt represented by formula (I): ##STR00001##
wherein Q.sup.1 and Q.sup.2 each independently represent a fluorine atom or a C.sub.1 to C.sub.6 perfluoroalkyl group, R.sup.1 and R.sup.2 each independently represent a hydrogen atom, a fluorine atom or a C.sub.1 to C.sub.6 perfluoroalkyl group, z represents an integer of 0 to 6, X.sup.1 represents *—O—, *—CO—O— or *—O—CO—, * represents a binding site to CR.sup.1R.sup.2 or CQ.sup.1Q.sup.2, L.sup.1 represents a C.sub.1 to C.sub.6 alkanediyl group, R.sup.3 represents a C.sub.5 to C.sub.18 alicyclic hydrocarbon group in which a hydrogen atom may be replaced by a hydroxy group, and in which a methylene group may be replaced by an oxygen atom or a carbonyl group, and which alicyclic hydrocarbon group may have a cyclic ketal structure optionally having a fluorine atom; and Z.sup.+ represents an organic cation.
Salt, acid generator, resist composition and method for producing resist pattern
A salt represented by formula (I): ##STR00001##
wherein Q.sup.1 and Q.sup.2 each independently represent a fluorine atom or a C.sub.1 to C.sub.6 perfluoroalkyl group, R.sup.1 and R.sup.2 each independently represent a hydrogen atom, a fluorine atom or a C.sub.1 to C.sub.6 perfluoroalkyl group, z represents an integer of 0 to 6, X.sup.1 represents *—O—, *—CO—O— or *—O—CO—, * represents a binding site to CR.sup.1R.sup.2 or CQ.sup.1Q.sup.2, L.sup.1 represents a C.sub.1 to C.sub.6 alkanediyl group, R.sup.3 represents a C.sub.5 to C.sub.18 alicyclic hydrocarbon group in which a hydrogen atom may be replaced by a hydroxy group, and in which a methylene group may be replaced by an oxygen atom or a carbonyl group, and which alicyclic hydrocarbon group may have a cyclic ketal structure optionally having a fluorine atom; and Z.sup.+ represents an organic cation.