Problem: A replacement liquid of liquid filling between resist patterns and a method for producing resist patterns using the same. Means of solution: To provide a replacement liquid of liquid filling between resist patterns comprising a sulfonyl group-containing compound (A); a nitrogen-containing compound (B); and a solvent (C).

Provided is a method for manufacturing a conductive pillar capable of bonding a substrate and a bonding member with high bonding strength via a bonding layer without employing an electroplating method, and a method for manufacturing a bonded structure by employing this method. A method for manufacturing a conductive pillar 1 includes, in sequence, the steps of forming a resist layer 16 on a substrate 11 provided with an electrode pad 13, the resist layer 16 including an opening portion 16a on the electrode pad 13, forming a thin Cu film 17 by sputtering or evaporating Cu on a surface of the substrate 11 provided with the resist layer 16 including the opening portion 16a, filling the opening portion 16a with a fine particle copper paste 12c, and sintering the fine particle copper paste 12c by heating the substrate 11 filled with the fine particle copper paste 12c.

A method to control the density of a three-dimensional photonic crystal template involves changing the irradiation time from at least four laser beams to yield a periodic percolating matrix of mass and voids free of condensed matter from a photoresist composition. The photoresist composition includes a photoinitiator at a concentration where the dose or irradiation is controlled by the irradiation time and is less than the irradiation time that would convert all photoinitiator to initiating species such that the density of the three-dimensional photonic crystal template differs for different irradiation times. A deposition of reflecting or absorbing particles can be patterned on the surface of the photoresist composition to form a template with varying densities above different areas of the substrate.

A surface treatment composition and methods for improving adhesion of an organic layer on a titanium-containing hardmask includes forming a self-assembled monolayer on a surface of the titanium-containing hardmask prior to depositing the organic layer. The self-assembled monolayer is formed from a blend of alkyl phosphonic acids of formula (I): X(CH.sub.2).sub.nPOOH.sub.2 (I), wherein n is 6 to 16 and X is either CH.sub.3 or COOH, wherein a ratio of the methyl terminated (CH.sub.3) alkyl phosphonic acid to the carboxyl terminated (COOH) alkyl phosphonic acid ranges from 25:75 to 75:25.

A negative photosensitive resin composition containing an epoxy group-containing resin and a cationic polymerization initiator which includes a sulfonium salt represented by General Formula (I0). In Formula (I0), R1 and R2 represent an aryl group, a heterocyclic hydrocarbon group, or an alkyl group. R3 to R5 are an alkyl group, a hydroxy group, an alkoxy group, an alkylcarbonyl group, an arylcarbonyl group, an acyloxy group, an arylthio group, an alkylthio group, an aryl group, a heterocyclic hydrocarbon group, an aryloxy group, a hydroxy(poly)alkyleneoxy group, or a halogen atom. k is an integer of 0 to 4, m is an integer of 0 to 3, and n is an integer of 1 to 4. A is a group represented by —S—, —O—, —SO—, —SO.sub.2—, or —CO—. X.sup.− represents a monovalent polyatomic anion

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The rinsing composition according to embodiments of the present invention includes a non-ionic fluorinated surfactant and a basic additive containing tetraalkylammonium hydroxide in a specific range of content, so as to reduce the number of defects possibly occurring in a pattern after development of photoresist in a fine patterning process, while preventing pattern collapse.

A semiconductor machine system comprises a plurality of working chambers, wherein the working chambers process materials separately; a control host coupled to the plurality of working chambers, comprising: a main control module coupled to the plurality of working chambers; an analog control module coupled to the plurality of working chambers, and the analog control module is detachably coupled to one or more external devices by serial interface coupling; a digital control module coupled to the plurality of working chambers, and the main control module, the analog control module and the digital control module are coupled to each other; and a plurality of operating units coupled to at least one of the main control module, the analog control module and the digital control module, respectively, to control the plurality of working chambers for processing the materials by the main control module, the analog control module and the digital control module.

The present invention relates to a stripper composition for removing a photoresist in a process of manufacturing a semiconductor device.

According to the present invention, it is possible to prevent corrosion of the underlying film while improving the peeling force for the photoresist, and to improve the stability of the composition over time.

Provided are a cleaning agent and a preparation method and the use thereof. The cleaning agent is prepared from the following raw materials comprising the following mass fraction of components: 0.5%-20% of an oxidant containing iodine, 0.5%-20% of an etchant containing boron, 1%-50% of a pyrrolidinone solvent, 1%-20% of a corrosion inhibitor, 0.01%-5% of a metal ion-free surfactant, and water, with the sum of the mass fraction of each component being 100%, the pH of the cleaning agent is 7.5-13.5, and the corrosion inhibitor is one or more of a benzotriazole corrosion inhibitor, a hydrazone corrosion inhibitor, a carbazone corrosion inhibitor and a thiocarbohydrazone corrosion inhibitor. The cleaning agent can efficiently remove nitrides from hard mask residues with little effects on metals and low-κ dielectric materials, and has a good selectivity.

A manufacturing method for a cured substance includes a film forming step of applying a specific photosensitive resin composition onto a base material to form a film, an exposure step of selectively exposing the film, a development step of developing the exposed film with a developer to form a pattern, a treatment step of bringing a treatment liquid into contact with the pattern, and a heating step of heating the pattern after the treatment step, in which at least one of the developer or the treatment liquid contains at least one compound selected from the group consisting of a base and a base generator.