An optical component includes at least one micro-opto-electro-mechanical system (MOEMS) with a front side and a rear side. The optical component also includes at least one printed circuit board arranged on the rear side of the at least one MOEMS. The at least one printed circuit board has lateral contacts. The at least one printed circuit board may be equipped with electronic parts and cooling elements. The at least one MOEMS projects laterally beyond the at least one printed circuit board.

A projection exposure apparatus for microlithography includes a projection lens which includes a plurality of optical elements for imaging mask structures onto a substrate during an exposure process. The projection exposure apparatus also includes at least one manipulator configured to change, as part of a manipulator actuation, the optical effects of at least one of the optical elements within the projection lens by changing a state variable of the optical element along a predetermined travel. The projection exposure apparatus further includes an algorithm generator configured to generate a travel generating optimization algorithm, adapted to at least one predetermined imaging parameter, on the basis of the at least one predetermined imaging parameter.

A light source apparatus according to an embodiment may be used for an exposure apparatus which exposes a plurality of wafers by repeating a wafer exposure for exposing a total exposure area of each wafer. The wafer exposure may include a sequential execution of scanning exposures in which each divided area defined by dividing the total exposure area of each wafer is scanned by pulsed light. The apparatus may comprise: a light source controller configured to execute a control for outputting the pulsed light based on a luminescence trigger signal received from the exposure apparatus; a detector configured to detect a characteristic of the pulsed light; and a data collection processor configured to collect at least a piece of data in data included in a pulse light data group related to the pulsed light detected by the detector and a control data group related to the control, and execute a mapping process of mapping the collected data by at least one of scanning exposure basis and wafer exposure basis.

A self-damping shutter apparatus for use in an exposure system of a photolithography machine, comprising: at least two pieces of shutter blades (1) for cutting off light source to an exposure area when the shutter is closed; a shutter driving arm (2), for driving the shutter blades (1) to synchronically open or close; a magnetic damping brake motor (3), for driving or braking the shutter driving arm (2), and the magnetic damping brake motor (3) drives and brakes, via the shutter driving arm (2), the shutter blades (1). The self-damping shutter apparatus for use in the exposure system of the photolithography machine increases consistency of opening or closing the shutter blades, improves a light shading effect of the shutter apparatus in an exposure, and improves stability in the process of opening or closuring the shutter blades. When the shutter blades complete actions of opening or closing, current is not needed, the magnetic damping braking motor enables the shutter blades to maintain the state of opening or closing, shortens duration of control current, reduces heat dissipation, and saves energy.

In various embodiments, an exposure mask may include a carrier, a first exposure structure in a first structure plane of the carrier, and a second exposure structure in a second structure plane of the carrier. The two structure planes differ from one another.

A method for producing a spatially patterned structure includes forming a layer of a material on at least a portion of a substructure of the spatially patterned structure, forming a barrier layer of a fluorinated material on the layer of material to provide an intermediate structure, and exposing the intermediate structure to at least one of a second material or radiation to cause at least one of a chemical change or a structural change to at least a portion of the intermediate structure. The barrier layer substantially protects the layer of the material from chemical and structural changes during the exposing. Substructures are produced according to this method.

A lithographic apparatus including: a radiation system; a frame; a substrate table for holding a substrate; and a scanning mechanism. The radiation system is operable to produce a radiation beam. The substrate table is moveably mounted to the frame and arranged such that a target portion of the substrate is arranged to receive the radiation beam. The scanning mechanism is operable to move the substrate table relative to the frame so that different portions of the substrate may receive the radiation beam. A mechanism is operable to determine a quantity indicative of a velocity of the radiation system relative to the frame. An adjustment mechanism is operable to control a power or irradiance of the radiation beam so as to reduce a variation in a dose of radiation received by the substrate as a result of relative motion of the radiation system and the frame.

Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern: an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N>1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

In corner sections of first to fourth quadrants whose origin point is a center of an upper surface of a stage, three each of two-dimensional heads are provided. The three each of two-dimensional heads include one first head and two second heads. The stage is driven, while measuring a position of the stage using three first heads that face a two-dimensional grating of a scale plate provided above the stage from the four first heads, and during the driving, difference data of measurement values of the two second heads with respect to the first head in a measurement direction are taken in for head groups to which the three first heads belong, respectively, and using the difference data, grid errors are calibrated.

A method of patterning substrates using a lithographic apparatus. The method comprising providing a beam of radiation using an illumination system, using a patterning device to impart the radiation beam with a pattern in its cross-section, and using a projection system to project the patterned radiation beam onto target portions of a lot of substrates, wherein the method further comprises performing a radiation beam aberration measurement after projecting the patterned radiation beam onto a subset of the lot of substrates, performing an adjustment of the projection system using the results of the radiation beam aberration measurement, then projecting the patterned radiation beam onto a further subset of the lot of substrates.