A lithographic apparatus having a first outlet to provide a thermally conditioned fluid with a first flow characteristic to at least part of a sensor beam path, and a second outlet associated with the first outlet and to provide a thermally conditioned fluid with a second flow characteristic, different to the first flow characteristic, adjacent the thermally conditioned fluid from the first outlet.

A method of controlling a temperature of the semiconductor device includes operating an semiconductor apparatus; maintaining a temperature of a vessel of the semiconductor apparatus with a first cooling output by a cooling controller; heating the vessel for removing a material on the vessel; transferring a first signal, by a converter, to the cooling controller when heating the vessel; and reducing the first cooling output to a second cooling output by the cooling controller base on the first signal.

A method of controlling a feedback system with a data matching module of an extreme ultraviolet (EUV) radiation source is disclosed. The method includes obtaining a slit integrated energy (SLIE) sensor data and diffractive optical elements (DOE) data. The method performs a data match, by the data matching module, of a time difference of the SLIE sensor data and the DOE data to identify a mismatched set of the SLIE sensor data and the DOE data. The method also determines whether the time difference of the SLIE sensor data and the DOE data of the mismatched set is within an acceptable range. Based on the determination, the method automatically validates a configurable data of the mismatched set such that the SLIE sensor data of the mismatched set is valid for a reflectivity calculation.

A molding apparatus that molds a composition on a substrate with a mold includes a mold holding unit configured to hold the mold, a substrate holding unit configured to hold the substrate, a first elastic member configured to apply a first elastic force to the mold holding unit in a direction away from the substrate holding unit, and a control unit configured to cause the mold holding unit to move in the direction away from the substrate holding unit in a case where the control unit determines that an abnormality has occurred.

An optical arrangement for EUV lithography, including: at least one component (23) having a main body (32) with at least one surface region (30) which is exposed to activated hydrogen (H.sup.+, H*) during operation of the optical arrangement. The main body (32) contains at least one material which forms at least one volatile hydride upon contact of the surface region (30) with the activated hydrogen (H.sup.+, H*). At the surface region, noble metal ions (38) are implanted into the main body (32) in order to prevent the formation of the volatile hydride.

A photoresist supplying system includes a pump that includes a first tube phragm that stores a photoresist and a filter that filters the photoresist, a second tube phragm that stores the photoresist and is disposed outside the pump, where the second tube phragm transfers the photoresist to the first tube phragm, a storage unit that stores the photoresist, where the storage unit provides the photoresist to the second tube phragm, and a tube phragm drive unit that is connected to the first tube phragm. The tube phragm drive unit adjusts an interior volume of the first tube phragm and applies a pressure to a flexible outer wall of the first tube phragm to transfer the photoresist from the first tube phragm to a nozzle installed in the chamber. At least a part of the photoresist stored in the first tube phragm is transferred to the second tube phragm.

A lithographic apparatus arranged to project a pattern from a patterning device onto a substrate, comprising at least one housing comprising at least one internal wall, at least one optical component arranged within at least one chamber defined at least in part by the at least one internal wall and configured to receive a radiation beam and a cooling apparatus arranged to cool at least a portion of the at least one internal wall to a temperature below that of the at least one optical component.

A method for operating an optical apparatus (100A, 100B, 200), having a structural element (201) which is arranged in a residual gas atmosphere (RGA) of the apparatus and which is formed at least partly from an element material subjected to a chemical reduction process and/or an etching process with a plasma component (PK) present in the residual gas atmosphere includes: feeding (S2) a gas component (GK) that at least partly suppresses the reduction process depending on a detected suppression extent (UM) for a suppression of the etching process and/or reduction process by the suppressing gas component in the residual gas atmosphere; and detecting (S1) the suppression extent with a sensor unit (208) arranged in the residual gas atmosphere. The sensor unit includes a sensor material section (211) composed of a sensor material and exhibiting a sensor section property that is measurable under the influence of the suppressing gas component.

An extreme ultraviolet (EUV) lithography system includes a vane bucket module. The vane bucket module includes a temperature adjusting pack and a collecting tank inserted into the temperature adjusting pack. The temperature adjusting pack has a plurality of inlets. The collecting tank has a cover and the cover includes a plurality of through holes. The inlets of the temperature adjusting pack are aligned with the through holes of the cover. Thicknesses of edges of the cover is different from a thickness of a center of the cover.

Embodiments described herein relate to a dynamically controlled lens used in lithography tools. Multiple regions of the dynamic lens can be used to transmit a radiation beam for lithography process. By allowing multiple regions to transmit the radiation beam, the dynamically controlled lens can have an extended life cycle compared to conventional fixed lens. The dynamically controlled lens can be replaced or exchanged at a lower frequency, thus, improving efficiency of the lithography tools and reducing production cost.