A semiconductor light-emitting device includes a semiconductor stacked structure including a light-emitting layer, a metal electrode provided over the semiconductor stacked structure and having an opening for externally emitting a light emitted from the light-emitting layer, and a transparent electrode provided over the semiconductor stacked structure inside the opening and over the metal electrode.

A semiconductor light-emitting device includes a semiconductor stacked structure including a light-emitting layer, a metal electrode provided over the semiconductor stacked structure and having an opening for externally emitting a light emitted from the light-emitting layer, and a transparent electrode provided over the semiconductor stacked structure inside the opening and over the metal electrode.

An ion writing unit includes a housing, an electrode assembly, and a heating mechanism. The housing includes a chamber at least partially containing an ion generator. The electrode assembly includes an array of electrode nozzles on one exposed exterior surface of the housing and aligned to receive and guide generated ions. The heating mechanism applies heat to at least one of the chamber and at least a portion of the array of electrode nozzles.

An ion writing unit includes a housing, an electrode assembly, and a heating mechanism. The housing includes a chamber at least partially containing an ion generator. The electrode assembly includes an array of electrode nozzles on one exposed exterior surface of the housing and aligned to receive and guide generated ions. The heating mechanism applies heat to at least one of the chamber and at least a portion of the array of electrode nozzles.