The present invention provides an electrophotographic photosensitive member which has a substrate, a photoconductive layer and a surface layer formed from hydrogenated amorphous silicon carbide in this order. The average value of the carbon content (C/(C+Si)) of the surface layer formed from the hydrogenated amorphous silicon carbide is set at 0.90 or more and less than 1.00, and the average value of the hydrogen content (H/(H+C+Si)) is set at 0.40 or less; and when the average value of the ratios of the sum of a SiO bond and an OSiO bond in the outermost surface region that constitutes a range within a depth of 5 nm or less from the outermost surface of the surface layer is represented by a, and an average value of the silicon content (Si/(C+Si)) is represented by b, 0.015a*b0.090 holds.

An average value of a hydrogen content ratio of a surface layer made of hydrogenated amorphous carbon is set to be 0.40 or less and a maximum value of an sp.sup.2 bonding ratio in an outermost surface region of the surface layer made of the hydrogenated amorphous carbon is set to be 0.50 or less.

An average value of a hydrogen content ratio of a surface layer made of hydrogenated amorphous carbon is set to be 0.40 or less and a maximum value of an sp.sup.2 bonding ratio in an outermost surface region of the surface layer made of the hydrogenated amorphous carbon is set to be 0.50 or less.

The present invention provides an electrophotographic photosensitive member which has a substrate, a photoconductive layer and a surface layer formed from hydrogenated amorphous silicon carbide in this order. The average value of the carbon content (C/(C+Si)) of the surface layer formed from the hydrogenated amorphous silicon carbide is set at 0.90 or more and less than 1.00, and the average value of the hydrogen content (H/(H+C+Si)) is set at 0.40 or less; and when the average value of the ratios of the sum of a SiO bond and an OSiO bond in the outermost surface region that constitutes a range within a depth of 5 nm or less from the outermost surface of the surface layer is represented by a, and an average value of the silicon content (Si/(C+Si)) is represented by b, 0.015a*b0.090 holds.

There are provided a method of manufacturing an electrophotographic photoreceptor which achieves excellent enduring characteristics and reduction in occurrence of image defects, a method of manufacturing an image forming apparatus, and an electrophotographic photoreceptor manufacturing apparatus. A method of manufacturing an electrophotographic photoreceptor includes a step of roughening an outer surface of a cylindrical base body so that a surface roughness of the outer surface of the cylindrical base body satisfies Str0.70, in which Str denotes texture aspect ratio; a step of forming a charge injection blocking layer on the outer surface of the cylindrical base body; a step of forming a photoconductive layer on the charge injection blocking layer; and a step of forming a surface layer on the photoconductive layer.

There are provided an electrophotographic photoreceptor which achieves excellent enduring characteristics and reduction in occurrence of image defects, and an image forming apparatus and an electrophotographic photoreceptor manufacturing apparatus. An electrophotographic photoreceptor includes a cylindrical base body; a charge injection blocking layer disposed on the cylindrical base body; a photoconductive layer disposed on the charge injection blocking layer; and a surface layer disposed on the photoconductive layer, the surface layer having a surface roughness defined as: texture aspect ratio Str>0.67.