G06F11/102

Processing-in-memory (PIM) devices
11579967 · 2023-02-14 · ·

A Processing-In-Memory (PIM) device includes an error correction code (ECC) logic circuit and an error accumulation detection circuit. The error correction code (ECC) logic circuit configured to detect an erroneous bits included in first data to generate a parity bit, and to detect an error correction capability of the first data to generate an error correction fail signal. The error accumulation detection circuit configured to generate an error accumulation signal counted by a pulse of the error correction fail signal. The error correction capability set to the maximum number of erroneous bits that can be corrected by performing an ECC operation on the first data.

System, Method, and Computer Program Product for Generating a Data Storage Server Distribution Pattern
20230004300 · 2023-01-05 ·

Described are a system, method, and computer program product for generating a data storage server distribution pattern. The method includes determining a set of servers and raw data to be stored. The method also includes transforming the raw data according to an error-correcting code scheme to produce distributable data. The method further includes determining a server reliability of each server in the set of servers. The method further includes generating the data storage server distribution pattern based on maximizing a system reliability relative to maximizing a system entropy. System reliability may be based on a minimum reliability of the set of servers, and system entropy may be based on a cumulated information entropy of each server of the set of servers. The method further includes distributing the distributable data to be stored across at least two servers of the set of servers according to the data storage server distribution pattern.

Processing of data

A method and associated apparatus is disclosed for processing data by means of an error code, wherein the error code has an H-matrix with n columns and m rows, wherein the columns of the H-matrix are different, wherein component-by-component XOR sums of adjacent columns of the H-matrix are different from one another and from all columns of the H-matrix and wherein component-by-component XOR sums of nonadjacent columns of the H-matrix are different from all columns of the H-matrix and from all component-by-component XOR sums of adjacent columns of the H-matrix.

Introduction and Detection of Parity Error in a UART
20230011127 · 2023-01-12 · ·

A UART includes a transmission register, a receive register, a virtual remappable pin, a parity error check circuit to evaluate contents of the receive register for a parity error, and control logic to determine contents of the transmission register. The contents include underlying data and a parity bit based thereupon. The control logic is to route the contents through the first virtual remappable pin to the receive register. The control logic is to, before reception of the entire contents at the receive register, cause modified contents to be provided to the receive register. The modified contents are to cause a parity error. The modified contents are to include different underlying data or a different parity bit than the contents of the transmission register. The control logic is to determine whether the parity error check circuit detected the parity error.

SPARE SUBSTITUTION IN MEMORY SYSTEM
20230037229 · 2023-02-02 ·

Methods, systems, and devices for spare substitution in a memory system are described. A controller may, as part of a background operation, assign a spare bit to replace a bit of a code word and save an indication of the spare bit assignment in a memory array. The code word may include a set of bits that each correspond to a respective Minimum Substitution Region (MSR) within a memory medium that retains the code word. An MSR corresponding to the bit to be replaced may include a quantity of erroneous bits relative to a threshold. The controller may, during a read operation, identify the spare bit in a first portion of the code word, determine the bit to be replaced based on accessing the memory array, and replace the bit with the spare bit concurrently with receiving a second portion of the code word.

Apparatus and method for handling error in volatile memory of memory system based on a type of data and a state of data
11487634 · 2022-11-01 · ·

An apparatus for controlling an operation in a memory system includes a volatile memory including plural memory cells, a column data checking circuitry configured to determine whether all pieces of data outputted from memory cells corresponding to a bit line are identical to each other, and an error correction circuitry configured to determine whether the pieces of data include an error based at least on a type of data, a state of data, and an output of the column data checking circuitry, and to resolve the error.

System, method, and computer program product for generating a data storage server distribution pattern

Described are a system, method, and computer program product for generating a data storage server distribution pattern. The method includes determining a set of servers and raw data to be stored. The method also includes transforming the raw data according to an error-correcting code scheme to produce distributable data. The method further includes determining a server reliability of each server in the set of servers. The method further includes generating the data storage server distribution pattern based on maximizing a system reliability relative to maximizing a system entropy. System reliability may be based on a minimum reliability of the set of servers, and system entropy may be based on a cumulated information entropy of each server of the set of servers. The method further includes distributing the distributable data to be stored across at least two servers of the set of servers according to the data storage server distribution pattern.

Memory sub-system grading and allocation

An apparatus includes a component coupleable to a memory device. The component can be configured to analyze a plurality of sets of memory cells of the memory device to determine quality attributes associated with the plurality of sets of memory cells and assign grades to one or more sets of the memory cells based, at least in part, on the determined quality attributes. The component can be configured to allocate at least one of the plurality of sets of memory cells for use by the memory device based, at least in part, on the assigned grade associated with the one or more sets of the memory cells.

Semiconductor device with modified access and associated methods and systems

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may access a group of memory cells (e.g., portion of an array configurable to store ECC parity bits) otherwise reserved for ECC functionality of a memory device. The memory device may include a register to indicate whether its ECC functionality is enabled or disabled. When the register indicates the ECC functionality is disabled, the memory device may increase a storage capacity available to the host device by making the group of memory cells available for user-accessible data. Additionally or alternatively, the memory device may store metadata associated with various operational aspects of the memory device in the group of memory cells. Moreover, the memory device may modify a burst length to accommodate additional information to be stored in or read from the group of memory cells.

ERROR CONTROL FOR CONTENT-ADDRESSABLE MEMORY
20220382609 · 2022-12-01 ·

Methods, systems, and devices for error control for content-addressable memory (CAM) are described. A CAM may store bit vectors as a set of subvectors, which each subvector stored in an independent aspect of the CAM, such as in a separate column or array of memory cells within the CAM. The CAM may similarly segment a queried input bit vector and identify, for each resulting input subvector, whether a matching subvector is stored by the CAM. The CAM may identify a match for the input bit vector when the number of matching subvectors satisfies a threshold. The CAM may validate a match based on comparing a stored bit vector corresponding to the identified match to the input bit vector. The stored bit vector may undergo error correction and may be stored in the CAM or another memory array, such as a dynamic random access memory (DRAM) array.