G06F11/1044

Processing-in-memory (PIM) devices
11579967 · 2023-02-14 · ·

A Processing-In-Memory (PIM) device includes an error correction code (ECC) logic circuit and an error accumulation detection circuit. The error correction code (ECC) logic circuit configured to detect an erroneous bits included in first data to generate a parity bit, and to detect an error correction capability of the first data to generate an error correction fail signal. The error accumulation detection circuit configured to generate an error accumulation signal counted by a pulse of the error correction fail signal. The error correction capability set to the maximum number of erroneous bits that can be corrected by performing an ECC operation on the first data.

SYSTEM AND METHOD FOR PERFORMING SIMULTANEOUS READ AND WRITE OPERATIONS IN A MEMORY
20180004603 · 2018-01-04 ·

A network device includes: a set of content memory banks including a first memory bank; a parity memory bank; a first memory interface; and a second memory interface. The first memory interface is configured to perform a write operation to write new content data to a location in a first content memory bank in a plurality of partial write operations that are spread over two or more clock cycles, including: generating new parity information for the new content data using old content data at the location in the first content memory bank, and storing the new parity information to the parity memory bank. The second memory interface is configured to perform a read operation at the location in the first content memory bank concurrently while the first memory interface is performing at least one of the plurality of partial write operations.

MEMORY SYSTEM AND METHOD OF CONTROLLING NONVOLATILE MEMORY
20180011760 · 2018-01-11 · ·

According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller manages a plurality of namespaces for storing a plurality of kinds of data having different update frequencies. The controller encodes write data by using first coding for reducing wear of a memory cell to generate first encoded data, and generates second encoded data to be written to the nonvolatile memory by adding an error correction code to the first encoded data. The controller changes the ratio between the first encoded data and the error correction code based on the namespace to which the write data is to be written.

Low gate-count encoding algorithm and hardware of flexible rate GLDPC ECC

Systems, devices, and methods for encoding information bits for storage, including encoding information bits and balance bits to obtain a first bit chunk of a first arrangement; permuting the first bit chunk to obtain a second bit chunk of a second arrangement; encoding the second bit chunk to obtain a third bit chunk of the second arrangement; permuting a first portion of the third bit chunk to obtain a fourth bit chunk of the first arrangement, and encoding the fourth bit chunk to obtain a fifth bit chunk of the first arrangement; permuting a second portion of the third bit chunk, and adjusting the balance bits based on the fifth bit chunk and the permutated second portion of the third bit chunk; adjusting the first arrangement based on the adjusted balance bits, and obtaining a codeword based on the adjusted first arrangement; and transmitting the codeword to a storage device.

Transmission failure feedback schemes for reducing crosstalk

Systems, apparatuses, and methods for transmission failure feedback associated with a memory device are described. A memory device may detect errors in received data and transmit an indication of the error when detected. The memory device may receive data and checksum information for the data from a controller. The memory device may generate a checksum for the received data and may detect transmission errors. The memory device may transmit an indication of detected errors to the controller, and the indication may be transmitted using a line that is different than an error detection code (EDC) line. A low-speed tracking clock signal may also be transmitted by the memory device over a line different than the EDC line. The memory device may transmit a generated checksum to the controller with a time offset applied to the checksum signaled over the EDC line.

POOL-LEVEL SOLID STATE DRIVE ERROR CORRECTION
20180011762 · 2018-01-11 ·

A method for performing error correction for a plurality of storage drives and a storage appliance comprising a plurality of storage devices is disclosed. In one embodiment, the method includes generating a first set of parity bits from a first set of data of at least one of the plurality of storage devices, the first set of parity bits capable of correcting a first number of error bits of the first set of data. The method further includes generating a second set of parity bits from a concatenated set of the first data and a second set of data from at least another of the plurality of storage devices, the second set of parity bits capable of correcting a second number of error bits of the first set of data, the second number being greater than the first number. The method further includes reading the first set of data and (i) correcting error bits within the first set of data with the first set of parity bits where a number of error bits is less than the first number of error bits; and (ii) correcting error bits within the first set of data with the second set of parity bits where the number of error bits is greater than the first number.

Memory device with status feedback for error correction

Methods, systems, and devices for a memory device with status feedback for error correction are described. For example, during a read operation, a memory device may perform an error correction operation on first data read from a memory array of the memory device. The error correction operation may generate second data and an indicator of a state of error corresponding to the second data. In one example, the indicator may indicate one of multiple possible states of error. In another example, the indicator may indicate a corrected error or no detectable error. The memory device may output the first or second data and the indicator of the state of error during a same burst interval. The memory device may output the data on a first channel and the indicator of the state of error on a second channel.

Fault tolerant computation method and apparatus for quantum Clifford circuit, device, and chip

This application discloses a fault tolerant computation method and device for a quantum Clifford circuit with reduced resource requirement. The method includes decomposing a quantum Clifford circuit into s logic Clifford circuits and preparing auxiliary quantum states corresponding to the s logic Clifford circuits. For each logic Clifford circuit, the method further includes teleporting an input quantum state corresponding to the logic Clifford circuit to an auxiliary qubit, processing a quantum state obtained after the teleportation by the logic Clifford circuit to obtain a corresponding output quantum state; measuring a corresponding error symptom based on the input quantum state and the auxiliary quantum state; and performing error correction on the output quantum state according to the error symptom to obtain an error-corrected output quantum state.

Reset and replay of memory sub-system controller in a memory sub-system

In an embodiment, a system includes a plurality of memory components and a processing device that is operatively coupled with the plurality of memory components. The processing device includes a host interface, an access management component, a media management component (MMC), and an MMC-restart manager that is configured to perform operations including detecting a triggering event for restarting the MMC, and responsively performing MMC-restart operations that include suspending operation of the access management component; determining whether the MMC is operating, and if so then suspending operation of the MMC; resetting the MMC; resuming operation of the MMC; and resuming operation of the access management component.

METHOD AND SYSTEM FOR OFF-LINE REPAIRING AND SUBSEQUENT REINTEGRATION IN A SYSTEM

There are provided methods and systems for correcting an error from a memory. For example, there is provided a system for mitigating an error in a memory. The system can include a memory controller communicatively coupled to a host. The memory controller may be configured to receive information associated with a memory location. The information can indicate the error at the memory location. The controller may be configured to perform, upon receiving the information, certain operations. The operations can include copying data around the memory location, placing the copied data in a reserved area. And the operations can further include outputting, to a central controller, a set of physical addresses associated with the reserved area, wherein the central controller is configured to modify the set of physical address to conduct a data recovery off-line.