A verifying method for an error checking and correcting (ECC) circuit of a static random-access memory (SRAM) is provided. The SRAM comprises a storage unit, an ECC circuit and a checking circuit. The ECC circuit receives an original data and an output first data. The checking circuit obtains a second data according to an error-injecting mask. The checking circuit performs a bit operation on the first data and the second data to obtain a third data. The checking circuit writes the third data into a test target area of the storage unit and the written data as a fourth data. The checking circuit reads the fourth data from the test target area. The ECC circuit obtains a fifth data and an error message according to the fourth data. The checking circuit obtains the bit error detection result according to the error message and the second data.

A system for communicating over a Controller Area Network (CAN) bus may include a central controller and a plurality of smart devices communicatively coupled with the central controller over the CAN bus and over an identification verification network separate from the CAN bus. Each smart device may be configured to at least one of measure various parameters and control a function based on a command received from the central controller, and then communicate one or more signals indicative of at least one of the measured parameters and the function over the CAN bus to the central controller. Each of the smart devices may include a physical input, a physical output, and at least two nonvolatile memory locations. A first of the at least two memory locations may be configured to store an identifier input signal received at the physical input from at least one of the central controller and an upstream smart device over the identification verification network, the identifier input signal being stored by the smart device as a function instance value for the smart device. The smart device may further include a source address determination module configured to determine a source address for the smart device based on the function instance value and a factory default base address for the smart device, and store the source address in a second of the at least two memory locations.

A processing system is described. The processing system comprises a microprocessor, a memory controller, a resource and a communication system. The microprocessor is configured to send read requests in order to request the transmission of first data, or write requests comprising second data. The memory controller is configured to read third data from a memory. The processing system comprises also a safety monitor circuit comprising an error detection circuit configured to receive data bits and respective Error Correction Code, ECC, bits, wherein the data bits correspond to the first, second or third data. The safety monitor circuit calculates further ECC bits and generates an error signal by comparing the calculated ECC bits with the received ECC bits. A fault collection and error management circuit receives the error signal from the safety monitor circuits. For example the safety monitor circuit comprises a test circuit configured to provide modified data bits and/or modified ECC bits to the error detection circuit as a function of connectivity test control signals, whereby the error detection circuit asserts the error signal as a function of the connectivity test control signals. The processing system comprises also a connectivity test control circuit comprising control registers programmable via the microprocessor, wherein the connectivity test control signals are generated as a function of the content of the control registers.

A test method and a test system are provided. The method includes that: first initial data is written into the storage module; ECC module encodes and generates first check data corresponding to first initial data based on first initial data, and writes first check data into the storage module; second initial data is written into a same address of the storage module; second initial data and first check data in the storage module are read. ECC module encodes and generates second check data corresponding to second initial data based on second initial data, and checks and corrects second initial data based on the first check data and the second check data; first read data of the memory is read, and whether a function of ECC module is abnormal is determined based on the first read data, the first read data is checked and corrected second initial data.

The present technology includes a method of operating a controller capable of controlling a semiconductor memory device including a plurality of memory cells. The method of operating the controller includes sensing error correction failure of data read from the semiconductor memory device, generating a new read voltage for re-reading the data, determining whether the new read voltage belongs to an allowable range depending on a read voltage statistical value of previous read voltages according to which error corrections were successful on previously read data, and determining, based on a result of the determining whether the new read voltage belongs to the allowable range, a read voltage to be used in a next read operation of re-reading the data.

Fuse logic is configured to selectively enable certain group of fuses of a fuse array to support one of column (or row) redundancy in one application or error correction code (ECC) operations in another application. For example, the fuse logic may decode the group of fuses to enable a replacement column (or row) of memory cells in one mode or application, and decodes a subset of the group of fuses to retrieve ECC data corresponding to a second group of fuses are encoded to enable a different replacement column or row of memory cells in a second mode or application. The fuse logic includes an ECC decode logic circuit that is selectively enabled to detect and correct errors in data encoded in the second group of fuses based on the ECC data encoded in the subset of fuses of the first group of fuses.

A processing system includes an error detection circuit configured to receive data bits and ECC bits, calculate further ECC bits as a function of the data bits, and generate a syndrome by comparing the calculated ECC bits with the received ECC bits. When the syndrome corresponds to one of N+K single bit-flip reference syndromes, the error detection circuit asserts a first error signal, and asserts one bit of a bit-flip signature corresponding to a single bit-flip error indicated by the respective single bit-flip reference syndrome.

Systems and methods for selecting an optimal error recovery procedure for correcting a read error in a solid-state drive are provided. A machine learning model is trained to forecast which error recovery procedure of a plurality of error recovery procedures is most likely to achieve a predetermined goal given a state of a solid-state drive. The predetermined goal is based on at least one of a read latency and a failure rate of the solid-state drive. A current state of the solid-state drive is determined. An error recovery procedure is selected from among the plurality of error recovery procedures by inputting the current state of the solid-state drive into the trained machine learning model, thereby triggering the trained machine learning model to output the selected error recovery procedure. The selected error recovery procedure is executed to recover data from the solid-state drive.

Fuse logic is configured to selectively enable certain group of fuses of a fuse array to support one of column (or row) redundancy in one application or error correction code (ECC) operations in another application. For example, the fuse logic may decode the group of fuses to enable a replacement column (or row) of memory cells in one mode or application, and decodes a subset of the group of fuses to retrieve ECC data corresponding to a second group of fuses are encoded to enable a different replacement column or row of memory cells in a second mode or application. The fuse logic includes an ECC decode logic circuit that is selectively enabled to detect and correct errors in data encoded in the second group of fuses based on the ECC data encoded in the subset of fuses of the first group of fuses.

Methods, systems, and devices for error correction management are described. A system may include a memory device that supports internal detection and correction of corrupted data, and whether such detection and correction functionality is operating properly may be evaluated. A known error may be included (e.g., intentionally introduced) into either data stored at the memory device or an associated error correction codeword, among other options, and data or other indications subsequently generated by the memory device may be evaluated for correctness in view of the error. Thus, either the memory device or a host device coupled with the memory device, among other devices, may determine whether error detection and correction functionality internal to the memory device is operating properly.