Methods, systems, and devices for logic remapping techniques are described. A memory system may receive a write command to store information at a first logical address of the memory system. The memory system may generate a first entry of a logical-to-physical mapping that maps the first logical address with a first physical address that stores the information. The memory system may perform a defragmentation operation or other remapping operation. In such a defragmentation operation, the memory system may remap the first logical address to a second logical address, such that the second logical address is mapped to the first physical address. The memory system may generate a second entry of a logical-to-logical mapping that maps the first logical address with the second logical address.

There is provided a method for managing a solid state storage system with hybrid storage technologies. The method includes monitoring one or more storage request streams to identify operating mode characteristics therein from among a set of possible operating mode characteristics. The set of possible operating mode characteristics correspond to a set of available operating modes of the hybrid storage technologies. The method further includes identifying a current operating mode from among the set of available operating modes responsive to the identified operating mode characteristics. The method also includes predicting a likely future operating mode responsive to variations in workload requirements to generate at least one future operating mode prediction. The method additionally includes controlling at least one of data placement, wear leveling, and garbage collection, responsive to the at least one future operating mode prediction.

A vehicle memory sub-system can be switched from a normal mode to a pre-shutdown mode and initiate a media management operation before shutting down. The mode switch and/or media management operation can be performed in response to receiving a shutdown or pre-shutdown command for the vehicle. After completion of the memory management operation the vehicle and/or memory sub-system can be shutdown.

A memory controller, a memory system and a method of operating a memory controller controlling a memory device are described. The memory controller may include a workload manager in communication with the memory device in which data is written and is read, the workload manager configured to acquire an amount of write data written to the memory device during a preset reference time, calculate a workload parameter indicating a ratio of the amount of write data to a reference write amount, and store the workload parameter for the preset reference time, and a performance manager configured to control, based on the workload parameter, a certain background operation performed by the memory device during a period corresponding to the workload parameter.

According to one embodiment, a memory system includes a non-volatile memory array with a plurality of memory cells. Each memory cell is a multilevel cell to which multibit data can be written. The non-volatile memory array includes a first storage region in which the multibit data of a first bit level is written and a second storage region in which data of a second bit level less than the first bit level is written. A memory controller is configured to move pieces of data from the first storage region to the second storage region based on the number of data read requests for the pieces of data received over a period of time or on external information received from a host device that sends read requests.

A memory device comprises a memory control unit including a processor configured to control operation of the memory array according to a first memory management protocol for memory access operations, the first memory management protocol including boundary conditions for multiple operating conditions comprising program/erase (P/E) cycles, error management operations, drive writes per day (DWPD), and power consumption; monitor operating conditions of the memory array for the P/E cycles, error management operations, DWPD, and power consumption; determine when a boundary condition for one of the multiple operating conditions is met; and in response to determining that a first boundary condition for a first monitored operating condition is met, change one or more operating conditions of the first memory management protocol to establish a second memory management protocol for the memory access operations, the second memory management protocol including a change boundary condition of a second monitored operating condition.

Embodiments of the invention describe a system main memory comprising two levels of memory that include cached subsets of system disk level storage. This main memory includes “near memory” comprising memory made of volatile memory, and “far memory” comprising volatile or nonvolatile memory storage that is larger and slower than the near memory.

The far memory is presented as “main memory” to the host OS while the near memory is a cache for the far memory that is transparent to the OS, thus appearing to the OS the same as prior art main memory solutions. The management of the two-level memory may be done by a combination of logic and modules executed via the host CPU. Near memory may be coupled to the host system CPU via high bandwidth, low latency means for efficient processing. Far memory may be coupled to the CPU via low bandwidth, high latency means.

A memory controller connectable to a semiconductor memory including a plurality of memory areas, includes a counter circuit configured to count a degree of wear of each of the memory areas in response to a memory operation addressed thereto, and a control circuit configured to set a rate of for wear leveling to be performed on the plurality of memory areas based on a total number of memory operations performed thereon, and select whether to perform wear leveling on each of the memory areas based on the rate, the degree of wear counted for the memory area, a first threshold for the degree of wear, and a second threshold for the degree of wear. The second threshold is greater than the first threshold.

A respective write cycle count for each of a plurality of data units of a memory device is obtained. Based on the respective write cycle count, whether a data unit of the plurality of data units satisfies a media management criterion is determined. Responsive to determining that the respective write cycle count satisfies the media management criterion, a media management operation every first constant cycle count on the data unit is performed. Responsive to determining that the respective write cycle count does not satisfy the media management criterion, a media management operation every second constant cycle count on the data unit is performed. The second constant cycle count is less than the first constant count.

A memory system includes a nonvolatile memory and a controller. The nonvolatile memory has first regions in which data writes and data reads can be executed in parallel. Each of the first regions has second regions which are each a data write/read unit. The controller acquires first values indicating a data write load for each of the first regions, detects a first region having a first value greater than or equal to a first threshold, acquires second values indicating a data write load for each of the plurality of second regions in the detected first region, detects a second region having a second value greater than or equal to a second threshold but less than or equal to a third threshold that is higher than the second threshold, and then move data from the detected second region to a second region in another first region.