A system is configured to avoid establishing an electrostatic discharge (ESD) region in an integrated circuit (IC). The system includes a processor and memory storing an IC simulator. The IC simulator establishes an IC chip that is sub-divided into a plurality of hierarchical levels. The IC simulator further analyzes a first hierarchical level to determine first connectivity information indicating connectivity between the first hierarchical level and one or both of lower-level pins and lower-level nets of a targeted hierarchical level having a lower-level of hierarchy with respect to the first hierarchical level and analyzes the targeted hierarchical level to determine second connectivity information indicating diode connectivity to one or both high-level pins and higher-level nets included in the first hierarchical level. The IC simulator determines an ESD fail region mitigation operation configured to avoid establishing the ESD region based on the first connectivity information and the second connectivity information.

A system is configured to avoid establishing an electrostatic discharge (ESD) region in an integrated circuit (IC). The system includes a processor and memory storing an IC simulator. The IC simulator establishes an IC chip that is sub-divided into a plurality of hierarchical levels. The IC simulator further analyzes a first hierarchical level to determine first connectivity information indicating connectivity between the first hierarchical level and one or both of lower-level pins and lower-level nets of a targeted hierarchical level having a lower-level of hierarchy with respect to the first hierarchical level and analyzes the targeted hierarchical level to determine second connectivity information indicating diode connectivity to one or both high-level pins and higher-level nets included in the first hierarchical level. The IC simulator determines an ESD fail region mitigation operation configured to avoid establishing the ESD region based on the first connectivity information and the second connectivity information.

Aspects of the invention include a computer-implemented method of hierarchical large block synthesis (HLBS). At least a partial ring is created around an HLBS structure. The partial ring includes at least one or more of filler elements, which are engineering change order (ECO) books for adding repeaters to wire dominated nets, and decoupling capacitors of relatively large sizes. Certain areas of the HLBS structure within the partial ring that exhibit a unique characteristic are identified. Decoupling capacitors of the relatively large sizes are disposed in the certain areas. A remainder of the areas of the HLBS structure are filled with engineering change order (ECO) books and decoupling capacitors of relatively small sizes.

Aspects of the invention include a computer-implemented method of hierarchical large block synthesis (HLBS). At least a partial ring is created around an HLBS structure. The partial ring includes at least one or more of filler elements, which are engineering change order (ECO) books for adding repeaters to wire dominated nets, and decoupling capacitors of relatively large sizes. Certain areas of the HLBS structure within the partial ring that exhibit a unique characteristic are identified. Decoupling capacitors of the relatively large sizes are disposed in the certain areas. A remainder of the areas of the HLBS structure are filled with engineering change order (ECO) books and decoupling capacitors of relatively small sizes.

A method and a system for correcting lithography process hotspots based on stress damping adjustment are provided. The method includes: acquiring a mark hotspot of a mask pattern; forming N annuli centered on the mark hotspot from inner to outer on a mask; moving vertexes of the mask pattern located in each annulus by a specific distance in a direction deviating from the mark hotspot and connecting the moved vertexes according to an original connection relationship to acquire an updated layout; verifying electrical characteristics of the updated layout, determining whether a deviation of the electrical characteristics of the updated layout is within a tolerable range, and performing geometric correction to compensate for a deviation of electrical parameters if no is determined and then ending correction, or ending the correction if yes is determined.

A method and a system for correcting lithography process hotspots based on stress damping adjustment are provided. The method includes: acquiring a mark hotspot of a mask pattern; forming N annuli centered on the mark hotspot from inner to outer on a mask; moving vertexes of the mask pattern located in each annulus by a specific distance in a direction deviating from the mark hotspot and connecting the moved vertexes according to an original connection relationship to acquire an updated layout; verifying electrical characteristics of the updated layout, determining whether a deviation of the electrical characteristics of the updated layout is within a tolerable range, and performing geometric correction to compensate for a deviation of electrical parameters if no is determined and then ending correction, or ending the correction if yes is determined.

A mask data generation method including: calculating first evaluation value of projection image based on first mask data in which first value or second value different from first value is set for each of a plurality of unit elements that constitute 2-dimensional grid; generating second mask data by changing value of first unit element to which first value is set to second value and by changing value of second unit element which is disposed close to first unit element on 2-dimensional grid and to which second value is set to first value, among the plurality of unit elements included in the first mask data; calculating second evaluation value of projection image based on the second mask data; and comparing the first evaluation value and the second evaluation value and selecting either the first mask data or the second mask data as output mask data based on the comparison result.

A mask data generation method including: calculating first evaluation value of projection image based on first mask data in which first value or second value different from first value is set for each of a plurality of unit elements that constitute 2-dimensional grid; generating second mask data by changing value of first unit element to which first value is set to second value and by changing value of second unit element which is disposed close to first unit element on 2-dimensional grid and to which second value is set to first value, among the plurality of unit elements included in the first mask data; calculating second evaluation value of projection image based on the second mask data; and comparing the first evaluation value and the second evaluation value and selecting either the first mask data or the second mask data as output mask data based on the comparison result.

Embodiments of the present application provide a memory array circuit, a memory array layout and a verification method. The memory array circuit includes: M word lines (WLs); M WL break nodes, each being configured to separate a corresponding one of the WLs into a first WL pin and a second WL pin; N bit lines (BLs); and N BL break nodes, each being configured to separate a corresponding one of the BLs into a first BL pin and a second BL pin, wherein the M and the N each are a positive even number.

Embodiments of the present application provide a memory array circuit, a memory array layout and a verification method. The memory array circuit includes: M word lines (WLs); M WL break nodes, each being configured to separate a corresponding one of the WLs into a first WL pin and a second WL pin; N bit lines (BLs); and N BL break nodes, each being configured to separate a corresponding one of the BLs into a first BL pin and a second BL pin, wherein the M and the N each are a positive even number.