Semiconductor devices includes third arms. A channel from the first and second arms extends to a channel of the third arm. When a current from a first voltage is flowing from the first arm to the second arm, a flow of ballistic electrons is generated that flow through the third arm channel from the channel of the first and second arms to the third arm channel. A fin structure located in the third arm channel and includes a gate. The gate is controlled using a second voltage over the fin structure, the fin structure is formed to induce an energy-field structure that shifts by an amount of the second voltage to control an opening of the gate that the flow of ballistic electrons pass through, which in turn changes a depletion width, subjecting the ballistic electrons to diffraction, and then interference.

A neural network circuit that uses a ramp function as an activation function includes a memory device in which memristors serving as memory elements are connected in a matrix. The neural network circuit further includes I-V conversion amplification circuits for converting currents flowing via the memory elements into voltages, a differential amplifier circuit for performing a differential operation on outputs of two I-V conversion amplification circuits, an A-D converter for performing an A-D conversion on a result of the differential operation, and an output determine that, by referring to input signals of the differential amplifier circuit, determines whether an output signal value of the differential amplifier circuit belongs to an active region or an inactive region. Based on a determination result, the input determiner switches over the differential amplifier circuit and the A-D converter between an operating state and a standby state.

Methods for determining a touch-and-hold touch event on a touch sensitive interaction surface of a touch sensing device are provided and comprise the steps of: a) determining a touch location of the touch event based on vibrations, such as bending waves, propagating through the interaction surface and b) determining whether the touch event comprises a hold touch event based on a sensed airborne signal. A device configured to carry out such methods is also provided.

A reservoir computer. In some embodiments, the reservoir computer includes a Duffing oscillator, and a readout circuit, and the readout circuit is configured to calculate a plurality of products, each of the products being calculated by multiplying a sample, of a plurality of samples of a signal from the Duffing oscillator, by a respective weight of a plurality of weights.

Semiconductor devices includes third arms. A channel from the first and second arms extends to a channel of the third arm. When a current from a first voltage is flowing from the first arm to the second arm, a flow of ballistic electrons is generated that flow through the third arm channel from the channel of the first and second arms to the third arm channel. A fin structure located in the third arm channel and includes a gate. The gate is controlled using a second voltage over the fin structure, the fin structure is formed to induce an energy-field structure that shifts by an amount of the second voltage to control an opening of the gate that the flow of ballistic electrons pass through, which in turn changes a depletion width, subjecting the ballistic electrons to diffraction, and then interference.

Systems and methods are disclosed for creating mechanical computing mechanisms and Turing-complete systems which include combinatorial logic and sequential logic, and which are energy-efficient.

An array of variable resistance cells based on a programmable threshold transistor and a resistor connected in parallel is described, including 3D and split gate variations. An input voltage applied to the transistor, and the programmable threshold of the transistor, can represent variables of sum-of-products operations. Programmable threshold transistors in the variable resistance cells comprise charge trapping memory transistors, such as floating gate transistors or dielectric charge trapping transistors. The resistor in the variable resistance cells can comprise a buried implant resistor connecting the current-carrying terminals (e.g. source and drain) of the programmable threshold transistor. A voltage sensing sense amplifier is configured to sense the voltage generated by the variable resistance cells as a function of an applied current and the resistance of the variable resistance cells.

Systems and methods are disclosed for creating mechanical computing mechanisms and Turing-complete systems which include combinatorial logic and sequential logic, and which are energy-efficient.

Systems and methods are disclosed for creating mechanical computing mechanisms and Turing-complete systems which include combinatorial logic and sequential logic, and which are energy-efficient.

Systems and methods are disclosed for creating mechanical computing mechanisms and Turing-complete systems which include combinatorial logic and sequential logic, and which are energy-efficient.