A carry-lookahead adder is provided. A first mask unit performs first mask operation on first input data with the first mask value to obtain first masked data. A second mask unit performs second mask operation on second input data with the second mask value to obtain second masked data. A first XOR gate receives the first and second mask values to provide a variable value. A half adder receives the first and second masked data to generate a propagation value and an intermediate generation value. A third mask unit performs third mask operation on the propagation value with the third mask value to obtain the third masked data. A carry-lookahead generator provides the carry output and the carry value according to carry input, the generation value, and the propagation value. The second XOR gate receives the third masked data and the carry value to provide the sum output.

A carry-lookahead adder is provided. A first mask unit performs first mask operation on first input data with the first mask value to obtain first masked data. A second mask unit performs second mask operation on second input data with the second mask value to obtain second masked data. A first XOR gate receives the first and second mask values to provide a variable value. A half adder receives the first and second masked data to generate a propagation value and an intermediate generation value. A third mask unit performs third mask operation on the propagation value with the third mask value to obtain the third masked data. A carry-lookahead generator provides the carry output and the carry value according to carry input, the generation value, and the propagation value. The second XOR gate receives the third masked data and the carry value to provide the sum output.

The present invention discloses a memristor array, comprising metal wires and memristors; the metal wires are arranged laterally and vertically; a memristor is arranged at the intersection of every two metal wires; the connection/disconnection of the metal wires is judged according to the resistance values of the memristors; and an adder is constituted according to the resistance value states of the memristors. The present invention provides a memristor-CMOS hybrid multiplication core circuit, in which one input of multiplication can be stored in a memristor network, one part of operation is completed in a memory network, the other part of operation is completed through a CMOS circuit, thereby reducing frequent data calls by half, and the power consumption of the CMOS circuit is further reduced by reducing competitive adventure in the operation process, thereby greatly reducing the overall energy consumption.

The present invention discloses a memristor array, comprising metal wires and memristors; the metal wires are arranged laterally and vertically; a memristor is arranged at the intersection of every two metal wires; the connection/disconnection of the metal wires is judged according to the resistance values of the memristors; and an adder is constituted according to the resistance value states of the memristors. The present invention provides a memristor-CMOS hybrid multiplication core circuit, in which one input of multiplication can be stored in a memristor network, one part of operation is completed in a memory network, the other part of operation is completed through a CMOS circuit, thereby reducing frequent data calls by half, and the power consumption of the CMOS circuit is further reduced by reducing competitive adventure in the operation process, thereby greatly reducing the overall energy consumption.

An embodiment of an apparatus comprises one or more fractional width fused multiply-accumulate (FMA) circuits configured as a shared Wallace tree, and circuitry coupled to the one or more fractional width FMA circuits to provide one or more fractional width FMA operations through the one or more fractional width FMA circuits. Other embodiments are disclosed and claimed.

An embodiment of an apparatus comprises one or more fractional width fused multiply-accumulate (FMA) circuits configured as a shared Wallace tree, and circuitry coupled to the one or more fractional width FMA circuits to provide one or more fractional width FMA operations through the one or more fractional width FMA circuits. Other embodiments are disclosed and claimed.

A circuit includes a first full adder, a second full adder, a first half adder, a third full adder configured to receive a sum output signal of the first full adder, a sum output signal of the second full adder, and a sum output signal of the first half adder, a fourth full adder configured to receive a carry output signal of the first full adder, a carry output signal of the second full adder, and a carry output signal of the first half adder, a second half adder configured to receive a carry output signal of the third full adder and a sum output signal of the fourth full adder, and a third half adder configured to receive a carry output signal of the second half adder and a carry output signal of the fourth full adder.

A circuit includes a first full adder, a second full adder, a first half adder, a third full adder configured to receive a sum output signal of the first full adder, a sum output signal of the second full adder, and a sum output signal of the first half adder, a fourth full adder configured to receive a carry output signal of the first full adder, a carry output signal of the second full adder, and a carry output signal of the first half adder, a second half adder configured to receive a carry output signal of the third full adder and a sum output signal of the fourth full adder, and a third half adder configured to receive a carry output signal of the second half adder and a carry output signal of the fourth full adder.

A circuit includes a plurality of first counting gates, a first ternary half adder (THA) and a second THA that are connected to the plurality of first counting gates, a third THA configured to receive a sum output signal of the first THA and a sum output signal of the second THA, a first ternary sum gate configured to receive a carry output signal of the first THA and a carry output signal of the second THA, and a second ternary sum gate configured to receive a carry output signal of the third THA and an output signal of the first ternary sum gate, wherein the third THA and the second ternary sum gate may be configured to output voltage signals corresponding to a number of drain voltages among input signals applied to the plurality of first counting gates.

A combinational logic circuit includes input circuitry to receive a first and second input signals that transition between supply voltages of first and second voltage domain, respectively. The input circuitry generates, based on the first and second input signals, a first internal signal that transitions between one of the supply voltages of the first voltage domain and one of the supply voltages of the second voltage domain. Output circuitry within the combinational logic circuit generates an output signal that transitions between the upper and lower supply voltages of the first voltage domain in response to transition of the first internal signal.