A magnetoresistance effect element of the present disclosure includes a first Ru alloy layer, a first ferromagnetic layer, a non-magnetic metal layer, and a second ferromagnetic layer in order, wherein the first Ru alloy layer contains one or more Ru alloys represented by the following general formula (1),

Ru.sub.αX.sub.1-α  (1) where, in the general formula (1), the symbol X represents one or more elements selected from the group consisting of Be, B, Ti, Y, Zr, Nb, Mo, Rh, In, Sn, La, Ce, Nd, Sm, Gd, Dy, Er, Ta, W, Re, Os, and Ir, and the symbol α represents a number satisfying 0.5<α<1, the first ferromagnetic layer contains a Heusler alloy, and the second ferromagnetic layer contains a Heusler alloy.

The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device that comprises a first shield, a first spin hall layer, a first free layer, a gap layer, a second spin hall layer, a second free layer, and a second shield. The gap layer functions as an electrode and is disposed between the first spin hall layer and the second spin hall layer. Electrical lead connections are located about the first spin hall layer, the second spin hall layer, the gap layer, the first shield, and/or the second shield. The electrical lead connections facilitate the flow of current and/or voltage from a negative lead to a positive lead. The positioning of the electrical lead connections and the positioning of the SOT differential layers improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).

The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device that comprises a first shield, a first spin hall layer, a first free layer, a gap layer, a second spin hall layer, a second free layer, and a second shield. The gap layer functions as an electrode and is disposed between the first spin hall layer and the second spin hall layer. Electrical lead connections are located about the first spin hall layer, the second spin hall layer, the gap layer, the first shield, and/or the second shield. The electrical lead connections facilitate the flow of current and/or voltage from a negative lead to a positive lead. The positioning of the electrical lead connections and the positioning of the SOT differential layers improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).

A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a SHE layer comprising a giant Spin Hall Angle material is formed in a write gap between a main pole (MP) trailing side and trailing shield (TS). The SHE layer contacts either the MP or TS, and has a front side at the air bearing surface or recessed therefrom. In one embodiment, a current (I.sub.1) is applied between the MP trailing side and SHE layer and is spin polarized to generate a first spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field. In a second embodiment, a current (I.sub.2) is applied between the SHE layer and TS and is spin polarized to generate a second spin transfer torque that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate.

A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a SHE layer comprising a giant Spin Hall Angle material is formed in a write gap between a main pole (MP) trailing side and trailing shield (TS). The SHE layer contacts either the MP or TS, and has a front side at the air bearing surface or recessed therefrom. In one embodiment, a current (I.sub.1) is applied between the MP trailing side and SHE layer and is spin polarized to generate a first spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field. In a second embodiment, a current (I.sub.2) is applied between the SHE layer and TS and is spin polarized to generate a second spin transfer torque that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate.

A Z detection unit includes magnetoresistive elements provided on inclined side surfaces of Z detection recesses. An X detection unit includes magnetoresistive elements provided on inclined side surfaces of X detection recesses. A Y detection unit includes magnetoresistive elements provided on inclined side surfaces of Y detection recesses. Directions of fixed magnetization of fixed magnetic layers included in the magnetoresistive elements are set to directions shown by arrows with solid lines.

A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a SHE layer comprising a giant Spin Hall Angle material is formed between a main pole (MP) trailing side and trailing shield (TS) bottom surface. The SHE layer may contact one or both of the MP and TS, and has a front side at the air bearing surface (ABS) or recessed therefrom. A first current (I.sub.1) is applied between the MP trailing side and SHE layer and is spin polarized to generate a first spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field. A second current (I.sub.2) is applied between the SHE layer and TS and is spin polarized to generate a second spin transfer torque that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate.

Magnetic sensors using spin Hall effect and methods for fabricating same are provided. One such magnetic sensor includes a spin Hall layer including an electrically conductive, non-magnetic material, a magnetic free layer adjacent to the spin Hall layer, a pair of push terminals configured to enable an electrical current to pass through the magnetic free layer and the spin Hall layer in a direction that is perpendicular to a plane of the free and spin Hall layers, and a pair of sensing terminals configured to sense a voltage when the electrical current passes through the magnetic free layer and the spin Hall layer, where each of the push and sensing terminals is electrically isolated from the other terminals.

The present disclosure generally relates to magnetic media devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The recording head includes a main pole, a trailing shield hot seed layer, a spin Hall layer disposed between the main pole and the trailing shield hot seed layer, and a spin-torque layer disposed between the main pole and the trailing shield hot seed layer. Spin-orbit torque (SOT) is generated from the spin Hall layer. The spin-torque layer magnetization switching or precession is induced by the SOT. The SOT based head reduces the switching current and the V.sub.jump due to higher spin polarization ratio, which improves energy efficiency. In addition, the spin Hall layer and the spin-torque layer are easier to form compared to the conventional pseudo spin-valve structure.

The present disclosure generally relates to magnetic media devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The recording head includes a main pole, a trailing shield hot seed layer, a spin Hall layer disposed between the main pole and the trailing shield hot seed layer, and a spin-torque layer disposed between the main pole and the trailing shield hot seed layer. Spin-orbit torque (SOT) is generated from the spin Hall layer. The spin-torque layer magnetization switching or precession is induced by the SOT. The SOT based head reduces the switching current and the V.sub.jump due to higher spin polarization ratio, which improves energy efficiency. In addition, the spin Hall layer and the spin-torque layer are easier to form compared to the conventional pseudo spin-valve structure.