A magnetic read head is provided, comprising a bottom magnetic shield, a first free magnetic layer, a second free magnetic layer, and a top magnetic shield, arranged from bottom to top in this order in a stacking direction from a leading side to a trailing side of the read head. A non-soft bias layer is positioned below the top magnetic shield and on a back side of the first and the second free magnetic layers. The top magnetic shield has a unidirectional anisotropy, the magnetic moments of the top and the bottom magnetic shields are canted relative to a plane of the first and the second free magnetic layers, and the top and the bottom magnetic shields are decoupled from the non-soft bias layer and not magnetically coupled to a soft bias layer.

The present disclosure generally relates to read heads having dual free layer (DFL) sensors. The read head has a sensor disposed between two shields. The sensor is a DFL sensor and has a surface at the media facing surface (MFS). Recessed from the DFL sensor, and from the MFS, is a rear hard bias (RHB) structure. The RHB structure is disposed between the shields as well. In between the DFL sensor and the RHB structure is insulating material. The RHB is disposed on the insulating material. The RHB includes a RHB seed layer as well as a RHB bulk layer. The RHB bulk layer includes a first bulk layer and a second bulk layer, the first bulk layer having a different density relative to the second bulk layer.

A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S2). Preferably, the sensor has a seed layer, an AP2 reference layer, antiferromagnetic coupling layer, AP1 reference layer, and a tunnel barrier sequentially formed on a bottom shield (S1). In a three terminal configuration, a first current flows between S1 and S2 such that the AP1 reference layer produces a first spin torque on the FL, and a second current flows across the SHE layer thereby generating a second spin torque on the FL that opposes the first spin torque. When the stripe heights of the FL and SHE layer are equal, a two terminal configuration is employed where a current flows between one side of the SHE layer to a center portion thereof and then to S1, or vice versa.

A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S2). Preferably, the sensor has a seed layer, an AP2 reference layer, antiferromagnetic coupling layer, AP1 reference layer, and a tunnel barrier sequentially formed on a bottom shield (S1). When the stripe heights of the FL and SHE layer are equal, a two terminal configuration is employed where a current flows between one side of the SHE layer to a center portion thereof and then to S1, or vice versa. As a result, a second spin torque is generated by the SHE layer on the FL that opposes a first spin torque from the AP1 reference layer on the FL.

A reader of a magnetic recording head includes a sensor stack, a first side shield and a second side shield disposed on opposite sides of the sensor stack in a cross-track dimension, and a bridge. The bridge is configured to align magnetic moments of the first side shield and the second side shield. The bridge is disposed above the sensor stack relative to a media-facing surface of the magnetic recording head and proximate to the first side shield and the second side shield.

A manufacturing method for a magnetoresistive element includes: a step of forming a stack; a step of forming an insulating film to cover the stack; a step of forming an initial magnetic layer to cover the stack and the insulating film so that a thickness of the initial magnetic layer in a first direction is greater than a thickness of the stack in the first direction; a step of forming an organic material film on the initial magnetic layer; and an etching step of etching a part of the initial magnetic layer and the organic material film by ion beam etching so that the initial magnetic layer becomes a pair of magnetic layers.

A magnetic recording medium includes a substrate; a lower base layer formed on the substrate; and a (001) oriented L1.sub.0 magnetic layer formed on the lower base layer and including a first magnetic layer formed on the lower base layer and having a granular structure of magnetic grains and a grain boundary portion, the grain boundary portion containing C, and a second magnetic layer formed on the first magnetic layer and having a granular structure of magnetic grains and a grain boundary portion, the grain boundary portion containing oxide or nitride, the second magnetic layer further containing one or more elements selected from a group consisting of Mg, Ni, Zn, Ge, Pd, Sn, Ag, Re, Au and Pb as an additive.

A method and system provide a magnetic read apparatus. The magnetic read apparatus includes a read sensor. The read sensor includes a pinning layer, a nonmagnetic insertion layer and a pinned layer. The nonmagnetic insertion layer has a location selected from a first location and a second location. The first location is between the pinned layer and the pinning layer. The second location is within the pinning layer.

A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.

An apparatus that includes a read sensor having a bearing surface and first and second free layers that are separated by an intermediate structure. The first FL includes multiple segments, with each segment having a width at the bearing surface. A sum of the widths of different ones of the multiple segments is a first width of the first FL. The second FL is unsegmented and has a second width at the bearing surface that is different from the first width of the first FL. The read sensor also includes a first terminal connected to a first one of the multiple segments of the first FL, and a second terminal connected to a second one of the multiple segments of the first FL. A third terminal is connected to the second FL. Control circuitry applies a bias current from either the first or second terminal to the third terminal.