Provided is a sputtering target, the sputtering target containing 0.05 at % or more of Bi and having a total content of metal oxides of from 10 vol % to 60 vol %, the balance containing at least Co and Pt.

A sputtering target according to the present invention contains Co and Pt as metal components, wherein a molar ratio of a content of Pt to a content of Co is from 5/100 to 45/100, and wherein the sputtering target contains Nb.sub.2O.sub.5 as a metal oxide component.

A magnetic recording medium includes a substrate, and a magnetic recording layer including magnetic grains having an L1.sub.0 structure. The magnetic recording layer is (001) oriented, and a surface of growth of the magnetic recording layer includes a (001) plane, a (111) plane, and planes equivalent to the (111) plane. An area ratio of the (111) plane and the planes equivalent to the (111) plane, represented by (A.sub.111+A.sub.111e)/(A.sub.001+A.sub.111+A.sub.111e), is in a range of 0.2 to 0.7, where A.sub.111 denotes an area of the (111) plane, A.sub.111e denotes an area of the planes equivalent to the (111) plane, and A.sub.001 denotes an area of the (001) plane.

Various apparatuses, systems, methods, and media are disclosed to provide a magnetic recording medium that capping layer doped with an effective amount of metal to control grain-to-grain exchange coupling in a capping layer. A magnetic recording medium includes a substrate, a magnetic recording layer (MRL) on the substrate, and a capping layer on the MRL. The capping layer include Co and is doped with a metal (e.g., Ru or Ta) in a range from 1 atomic percent to 5 atomic percent, inclusive.

A magnetic recording medium includes a flexible and elongated substrate, a soft magnetic layer having an average thickness of 10 nm or more to 50 nm or less, and a recording layer. The soft magnetic layer is disposed between the substrate and the recording layer, and a difference in Young's modulus between the magnetic recording medium and the substrate in a longitudinal direction of the substrate is 2.4 GPa or more.

Provided is a sputtering target, the sputtering target containing 0.05 at % or more of Bi and having a total content of metal oxides of from 10 vol % to 60 vol %, the balance containing at least Co and Pt.

Provided is a magnetic recording medium having a large magnetocrystalline anisotropy constant K.sub.u and a high coercivity H.sub.c as well as a sputtering target used for producing such a magnetic recording medium.

A Pt-oxide-based sputtering target consists of 60 vol % or more and less than 100 vol % of a Pt-base alloy phase and more than 0 vol % and 40 vol % or less of an oxide, where the Pt-base alloy phase contains 50 at % or more and 100 at % or less of Pt.

A film forming device includes a drum having a circumferential surface, a cathode accommodation unit disposed to be opposite to the circumferential surface, a first gas introducing unit which introduces a first gas into the cathode accommodation unit, and a second gas introducing unit which introduces a second gas between the circumferential surface and the cathode accommodation unit.

A magnetic recording medium includes a substrate, an underlayer provided on the substrate, and a magnetic layer provided on the underlayer and having a L1.sub.0 structure and a (001) orientation. The magnetic layer has a granular structure in which an organic compound having a methylene skeleton or a methine skeleton is arranged at grain boundaries of magnetic grains.

A ferromagnetically coupled magnetic recording medium having a first ferromagnetic layer, a second ferromagnetic layer, and a ferromagnetic coupling layer to ferromagnetically couple the first ferromagnetic layer to the second ferromagnetic layer is used as stable magnetic media with high M.sub.rT in high density recording hard drives. The first ferromagnetic layer is the stabilization layer and the second ferromagnetic layer is the main recording layer. The ferromagnetic coupling layer comprises a conductive material having a thickness which produces ferromagnetic coupling between said first ferromagnetic layer and said second ferromagnetic layer via the RKKY interaction.