Patent classifications
G11B5/855
RESIN COMPOSITION FOR UNDERLAYER FILM FORMATION, IMPRINT FORMING KIT, LAMINATE, PATTERN FORMING METHOD, AND METHOD FOR PRODUCING DEVICE
Disclosed herein are a resin composition for underlayer film formation which is capable of forming an underlayer film having good adhesiveness to a base material and good surface state, an imprint forming kit, a laminate, a pattern forming method, and a method for producing a device. Provided is a resin composition for underlayer film formation, including a resin, a nucleophilic catalyst, and a solvent, in which the content of the nucleophilic catalyst is 0.01 to 0.3 mass % with respect to the solid content of the resin composition for underlayer film formation.
METHOD FOR PROVIDING HEAT ASSISTED MAGNETIC RECORDING WRITE APPARATUS HAVING A NEAR-FIELD TRANSDUCER WITH A SLOPED NOSE
A method for fabricating a near-field transducer (NFT) for a heat assisted magnetic recording (HAMR) write apparatus is described. The HAMR write apparatus is coupled with a laser for providing energy and has a media-facing surface (MFS) configured to reside in proximity to a media during use. The method includes providing a stack on an underlayer. The stack includes an endpoint detection layer, an optical layer and an etchable layer. The optical layer is between the etchable and endpoint detection layers. The etchable layer is patterned to form a mask. A portion of the optical layer is removed. A remaining portion of the optical layer has a bevel at a bevel angle from the MFS location. The bevel angle is nonzero and acute. The NFT is provided such that the NFT has an NFT front surface adjoining the bevel and at the bevel angle from the MFS location.
METHOD FOR PROVIDING HEAT ASSISTED MAGNETIC RECORDING WRITE APPARATUS HAVING A NEAR-FIELD TRANSDUCER WITH A SLOPED NOSE
A method for fabricating a near-field transducer (NFT) for a heat assisted magnetic recording (HAMR) write apparatus is described. The HAMR write apparatus is coupled with a laser for providing energy and has a media-facing surface (MFS) configured to reside in proximity to a media during use. The method includes providing a stack on an underlayer. The stack includes an endpoint detection layer, an optical layer and an etchable layer. The optical layer is between the etchable and endpoint detection layers. The etchable layer is patterned to form a mask. A portion of the optical layer is removed. A remaining portion of the optical layer has a bevel at a bevel angle from the MFS location. The bevel angle is nonzero and acute. The NFT is provided such that the NFT has an NFT front surface adjoining the bevel and at the bevel angle from the MFS location.
IMPRINT APPARATUS AND METHOD OF MANUFACTURING ARTICLE
The present invention provides an imprint apparatus comprising a deforming unit configured to deform a pattern surface by applying a force to a mold, a measuring unit configured to measure a deformation amount of the pattern surface, a control unit configured to control the measuring unit to measure the deformation amount in each of a plurality of states in which a plurality of the forces are applied to the mold, a calculation unit configured to calculate a rate of change in the deformation amount as a function of a change in the force applied to the mold, and a calibration unit configured to calibrate a control profile describing a time in the imprint process, and the force applied to the mold, based on the rate of change in the deformation amount.
IMPRINT APPARATUS AND METHOD OF MANUFACTURING ARTICLE
The present invention provides an imprint apparatus comprising a deforming unit configured to deform a pattern surface by applying a force to a mold, a measuring unit configured to measure a deformation amount of the pattern surface, a control unit configured to control the measuring unit to measure the deformation amount in each of a plurality of states in which a plurality of the forces are applied to the mold, a calculation unit configured to calculate a rate of change in the deformation amount as a function of a change in the force applied to the mold, and a calibration unit configured to calibrate a control profile describing a time in the imprint process, and the force applied to the mold, based on the rate of change in the deformation amount.
NANOIMPRINTING METHOD, AND METHOD FOR PRODUCING A DROPLET ARRANGEMENT PATTERN
The disclosed nanoimprinting method suppresses fluctuations in thickness of residual film and defects due to residual gas in a resist film, onto which a pattern of protrusions and recesses is transferred, in a nanoimprinting method that employs the ink jet method to coat a substrate with droplets of resist material. Droplets are coated onto a substrate such that the spaces between the droplets along an A direction which is substantially parallel to the direction of the lines of a linear pattern of protrusions and recesses are longer than the spaces between the droplets in a B direction which is substantially perpendicular to the A direction, in a nanoimprinting method that coats a substrate with the droplets of a resist material using the ink jet method.
NANOIMPRINTING METHOD, AND METHOD FOR PRODUCING A DROPLET ARRANGEMENT PATTERN
The disclosed nanoimprinting method suppresses fluctuations in thickness of residual film and defects due to residual gas in a resist film, onto which a pattern of protrusions and recesses is transferred, in a nanoimprinting method that employs the ink jet method to coat a substrate with droplets of resist material. Droplets are coated onto a substrate such that the spaces between the droplets along an A direction which is substantially parallel to the direction of the lines of a linear pattern of protrusions and recesses are longer than the spaces between the droplets in a B direction which is substantially perpendicular to the A direction, in a nanoimprinting method that coats a substrate with the droplets of a resist material using the ink jet method.
MAGNETIC RECORDING MEDIUM AND MAGNETIC MEMORY DEVICE
A magnetic recording medium includes a substrate; a lower base layer formed on the substrate; and a (001) oriented L1.sub.0 magnetic layer formed on the lower base layer and including a first magnetic layer formed on the lower base layer and having a granular structure of magnetic grains and a grain boundary portion, the grain boundary portion containing C, and a second magnetic layer formed on the first magnetic layer and having a granular structure of magnetic grains and a grain boundary portion, the grain boundary portion containing oxide or nitride, the second magnetic layer further containing one or more elements selected from a group consisting of Mg, Ni, Zn, Ge, Pd, Sn, Ag, Re, Au and Pb as an additive.
Writer pole formation
Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.
Writer pole formation
Implementations disclosed herein provide a method of reducing the topography at the alignment and overlay marks area during the writer pole photolithography process in order to reduce the wafer scale variation and reduce the writer pole photolithography process rework rate. In one implementation, an intermediate stage of a wafer for writer pole formation is generated by removing a part of at least one metallic writer pole layer on top of an intermediate stage writer pole wafer to form a recovery trench, depositing an optically transparent material on top of the wafer, wherein the thickness of the optically transparent material is higher than a target recovery trench topography, forming a photoresist pattern on top of the optically transparent material over the recovery trench, etching the optically transparent material, and removing the photoresist pattern and at least part of the remaining optically transparent material.