Computing devices, such as mobile computing devices, have access to one or more image sensors that can capture images and video with multiple subjects. Some of these subjects may vary in priority for various tasks. It may be desired to increase or decrease the compression on each subject in order to more efficiently store the image data. Low-power, fast-response machine learning logic can be configured to allow for the generation of a plurality of inference data. Inference data can be associated with the type, motion and/or priority of the subjects as desired. This inference data can be utilized along with other subject data to generate one or more variable compression regions within the image data. The image data can be subsequently processed to compress different areas of the image based on a desired application. The variably compressed image can reduce file sizes and allow for more efficient storage and processing.

Computing devices, such as mobile computing devices, have access to one or more image sensors that can capture images and video with multiple subjects. Some of these subjects may vary in priority for various tasks. It may be desired to increase or decrease the compression on each subject in order to more efficiently store the image data. Low-power, fast-response machine learning logic can be configured to allow for the generation of a plurality of inference data. Inference data can be associated with the type, motion and/or priority of the subjects as desired. This inference data can be utilized along with other subject data to generate one or more variable compression regions within the image data. The image data can be subsequently processed to compress different areas of the image based on a desired application. The variably compressed image can reduce file sizes and allow for more efficient storage and processing.

An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization (e.g., perpendicular magnetization); a first structure adjacent to the magnetic junction, wherein the first structure comprises metal (e.g., Hf, Ta, W, Ir, Pt, Bi, Cu, Mo, Gf, Ge, Ga, or Au); an interconnect adjacent to the first structure; and a second structure adjacent to the interconnect such that the first structure and the second structure are on opposite surfaces of the interconnect, wherein the second structure comprises a magnet with a second magnetization (e.g., in-plane magnetization) substantially different from the first magnetization.

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

A structure includes an electronically controllable ferromagnetic oxide structure that includes at least three layers. The first layer comprises STO. The second layer has a thickness of at least about 3 unit cells, said thickness being in a direction substantially perpendicular to the interface between the first and second layers. The third layer is in contact with either the first layer or the second layer or both, and is capable of altering the charge carrier density at the interface between the first layer and the second layer. The interface between the first and second layers is capable of exhibiting electronically controlled ferromagnetism.

A structure includes an electronically controllable ferromagnetic oxide structure that includes at least three layers. The first layer comprises STO. The second layer has a thickness of at least about 3 unit cells, said thickness being in a direction substantially perpendicular to the interface between the first and second layers. The third layer is in contact with either the first layer or the second layer or both, and is capable of altering the charge carrier density at the interface between the first layer and the second layer. The interface between the first and second layers is capable of exhibiting electronically controlled ferromagnetism.

A structure includes an electronically controllable ferromagnetic oxide structure that includes at least three layers. The first layer comprises STO. The second layer has a thickness of at least about 3 unit cells, said thickness being in a direction substantially perpendicular to the interface between the first and second layers. The third layer is in contact with either the first layer or the second layer or both, and is capable of altering the charge carrier density at the interface between the first layer and the second layer. The interface between the first and second layers is capable of exhibiting electronically controlled ferromagnetism.

A magnetic memory includes first and second wirings, a magnetic memory line including first and second portions and extending along a first direction, the second portion electrically connected to the first wiring, and a first magnetic member electrically connected to the first portion and the second wiring and including first and second magnetic portions each having an annular shape and overlapping an end portion of the first portion of the memory line as viewed from the first direction, a third magnetic portion having a cylindrical shape and extending between an inner end of the first magnetic portion and an inner end of the second magnetic portion, and a fourth magnetic portion having a cylindrical shape and extending between an outer end of the first magnetic portion and an outer end of the second magnetic portion.

A magnetic-assist, spin-torque transfer magnetic tunnel junction device and a method for performing a magnetic-assist, spin-torque-transfer write to the device are disclosed. In an exemplary embodiment, the magnetic tunnel junction device includes a first electrode, a pinned layer disposed on the first electrode, a free layer disposed on the pinned layer, and a barrier layer disposed between the pinned layer and the free layer. The device further includes a second electrode electrically coupled to the free layer, the second electrode containing a magnetic assist region. In some embodiments, the magnetic assist region is configured to produce a net magnetic field when supplied with a write current. The net magnetic field is aligned to assist a spin-torque transfer of the write current on the free layer.