G11C11/28

SWITCH AND METHOD FOR FABRICATING THE SAME, AND RESISTIVE MEMORY CELL AND ELECTRONIC DEVICE, INCLUDING THE SAME
20170365640 · 2017-12-21 ·

A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.

Switch and method for fabricating the same, and resistive memory cell and electronic device, including the same
11043533 · 2021-06-22 · ·

A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.

Switch and method for fabricating the same, and resistive memory cell and electronic device, including the same
11043533 · 2021-06-22 · ·

A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.

Gate driver on array circuit and driving method thereof, and display device

A Gate Driver on Array circuit and a driving method thereof, and a display device. The Gate Driver on Array circuit includes at least one group of shift registers, each group of shift registers includes a plurality of shift registers in cascade, the plurality of shift registers including a first shift register, a second shift register connected after the first shift register, and a third shift register connected after the second shift register, wherein the third shift register is provided with an initializing terminal connected to an output terminal of the first shift register.

SWITCH AND METHOD FOR FABRICATING THE SAME, AND RESISTIVE MEMORY CELL AND ELECTRONIC DEVICE, INCLUDING THE SAME
20190319070 · 2019-10-17 ·

A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.

SWITCH AND METHOD FOR FABRICATING THE SAME, AND RESISTIVE MEMORY CELL AND ELECTRONIC DEVICE, INCLUDING THE SAME
20190319070 · 2019-10-17 ·

A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.

Switch and method for fabricating the same, and resistive memory cell and electronic device, including the same
10381407 · 2019-08-13 · ·

A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.

Switch and method for fabricating the same, and resistive memory cell and electronic device, including the same
10381407 · 2019-08-13 · ·

A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.