A storage device comprising: a nonvolatile memory device including a plurality of memory blocks; and a device controller configured to control the nonvolatile memory device to determine a memory block to perform a refresh operation and to control the memory block to perform the refresh operation to recover data of the memory block.

A method for performing stutter of dynamic random access memory (DRAM) where a system on a chip (SOC) initiates bursts of requests to the DRAM to fill buffers to allow the DRAM to self-refresh is disclosed. The method includes issuing, by a system management unit (SMU), a ForceZQCal command to the memory controller to initiate the stutter procedure in response to receiving a timeout request, such as an SMU ZQCal timeout request, periodically issuing a power platform threshold (PPT) request, by the SMU, to the memory controller, and sending a ForceZQCal command prior to a PPT request to ensure re-training occurs after ZQ Calibration. The ForceZQCal command issued prior to PPT request may reduce the latency of the stutter. The method may further include issuing a ForceZQCal command prior to each periodic re-training.

In an embodiment, a memory system may include at least two types of DRAM, which differ in at least one characteristic. For example, one DRAM type may be a high density DRAM, while another DRAM type may have lower density but may also have lower latency and higher bandwidth than the first DRAM type. DRAM of the first type may be on one or more first integrated circuits and DRAM of the second type may be on one or more second integrated circuits. In an embodiment, the first and second integrated circuits may be coupled together in a stack. The second integrated circuit may include a physical layer circuit to couple to other circuitry (e.g. an integrated circuit having a memory controller, such as a system on a chip (SOC)), and the physical layer circuit may be shared by the DRAM in the first integrated circuits.

Disclosed is a clock converting circuit, which includes a first switch that is connected between a first input node for receiving a second input clock and a first node and operates in response to a first logic state of a first input clock, the second input clock delayed with respect to the first input clock as much as 90 degrees, a second switch that is connected between a second input node for receiving the first input clock and a second node and operates in response to a second logic state of the second input clock, and a third switch that is connected between the second node and a ground node and operates in response to a first logic state of the second input clock opposite to the second logic state of the second input clock.

A memory controller of a memory device that uses a phase change memory and includes a memory cell array partitioned into a plurality of partitions is provided. A write request that request a data write to the memory device and a read request which request a data read from the memory device are inserted to a request queue. A scheduler, in a case that a conflict check condition including a first condition that a write operation is being performed in a first partition among the plurality of partitions is satisfied, creates a read command for a second partition based on a read request for the second partition when the request queue includes the read request for the second partition. The second partition is a partition, in which a read operation does not conflict with the write operation in the first partition, among the plurality of partitions.

A memory system and an operating method thereof are provided. The memory system includes a storage device including a mode register suitable for activating or inactivating an auto mode and a memory suitable for storing data, and a storage device controller controlling the mode register to enter a test mode, after inactivating the auto mode, during a test operation of the storage device, and controlling the mode register to activate the auto mode again when the test operation of the storage device is completed.

A memory device includes an address generation circuit, an address processing circuit and a refresh control circuit. The address generation circuit generates a first intermediate address according to a row address. The first intermediate address includes a first wordline address and an identification code indicating whether a first wordline indicated by the first wordline address is a normal or redundant wordline. The address processing circuit refers to the first intermediate address to generate a second intermediate address indicating a second wordline adjacent to the first wordline. The second intermediate address includes a second wordline address and an identification code indicating whether the second wordline is a normal or redundant wordline. The refresh control circuit determines a disturbance count of the second wordline each time the first wordline is activated, and refers to the disturbance count to determine whether to output the second wordline address to refresh the second wordline.

Systems, methods, and computer programs are disclosed for method for reducing memory subsystem power. In an exemplary method, a system resource manager provides memory performance requirements for a plurality of memory clients to a double data rate (DDR) subsystem. The DDR subsystem and the system resource manager reside on a system on chip (SoC) electrically coupled to a dynamic random access memory (DRAM). A cache hit rate is determined of each of the plurality of memory clients associated with a system cache residing on the DDR subsystem. The DDR subsystem controls a DDR clock frequency based on the memory performance requirements received from the system resource manager and the cache hit rates of the plurality of memory clients.

Systems, methods, and computer programs are disclosed for method for reducing memory subsystem power. In an exemplary method, a system resource manager provides memory performance requirements for a plurality of memory clients to a double data rate (DDR) subsystem. The DDR subsystem and the system resource manager reside on a system on chip (SoC) electrically coupled to a dynamic random access memory (DRAM). A cache hit rate is determined of each of the plurality of memory clients associated with a system cache residing on the DDR subsystem. The DDR subsystem adjusts access to the DRAM based on the memory performance requirements received from the system resource manager and the cache hit rates of the plurality of memory clients.

Three-dimensional (3D) DRAM integrated in the same package as compute logic enable forming high-density caches. In one example, an integrated 3D DRAM includes a large on-de cache (such as a level 4 (L4) cache), a large on-die memory-side cache, or both an L4 cache and a memory-side cache. One or more tag caches cache recently accessed tags from the L4 cache, the memory-side cache, or both. A cache controller in the compute logic is to receive a request from one of the processor cores to access an address and compare tags in the tag cache with the address. In response to a hit in the tag cache, the cache controller accesses data from the cache at a location indicated by an entry in the tag cache, without performing a tag lookup in the cache.