A data access system including a processor and a storage system including a main memory and a cache module. The cache module includes a FLC controller and a cache. The cache is configured as a FLC to be accessed prior to accessing the main memory. The processor is coupled to levels of cache separate from the FLC. The processor generates, in response to data required by the processor not being in the levels of cache, a physical address corresponding to a physical location in the storage system. The FLC controller generates a virtual address based on the physical address. The virtual address corresponds to a physical location within the FLC or the main memory. The cache module causes, in response to the virtual address not corresponding to the physical location within the FLC, the data required by the processor to be retrieved from the main memory.

An electronic device includes a command generation circuit configured to generate a refresh command and a driving control signal, which are enabled during an all-bank refresh operation, according to a logic level combination of an internal chip selection signal and an internal command address. The electronic device also includes a buffer control circuit configured to generate, from the refresh command and the driving control signal, a first buffer enable signal for enabling a first group of buffers and a second buffer enable signal for enabling a second group of buffers.

A semiconductor memory device includes a memory cell array, an error correction code (ECC) engine, a refresh control circuit, a scrubbing control circuit and a control logic circuit. The refresh control circuit generates refresh row addresses for refreshing a memory region on memory cell rows in response to a first command received from a memory controller. The scrubbing control circuit counts the refresh row addresses and generates a scrubbing address for performing a scrubbing operation on a first memory cell row of the memory cell rows whenever the scrubbing control circuit counts N refresh row addresses of the refresh row addresses. The ECC engine reads first data corresponding to a first codeword, from at least one sub-page in the first memory cell row, corrects at least one error bit in the first codeword and writes back the corrected first codeword in a corresponding memory location.

According to one embodiment, a cache memory system includes a cache memory and a cache controller. The cache memory can store first data to be read or written by a processor. The cache controller is configured to execute a refresh. The refresh includes reading the first data stored in the cache memory and writing the read first data to the cache memory. When executing the refresh, the cache controller is configured to exchange the first data stored in a first area of the cache memory for second data stored in a second area of the cache memory.

A computing system having memory components, including first memory and second memory, wherein the first memory is available to a host system for read and write access over a memory bus during one or more of a first plurality of windows. The computing system further includes a processing device, operatively coupled with the memory components, to: receive, from a driver of the host system, a request regarding a page of data stored in the second memory; responsive to the request, transfer the page from the second memory to a buffer; and write the page from the buffer to the first memory, wherein the page is written to the first memory during at least one of a second plurality of windows corresponding to a refresh timing for the memory bus, and the refresh timing is controlled at the host system.

A memory system may improve the endurance and performance of a plurality of memories included in the memory system mounted on a server system or a data processing system. For example, the memory system may throttle energy of a first memory using a second memory having a different characteristic from the first memory, control accesses to a memory region according to a refresh cycle, and control accesses to memories having different temperatures according to a priority of a request for each of the memories.

Subject matter disclosed herein relates to management of a memory device.

A memory system may improve the endurance and performance of a plurality of memories included in the memory system mounted on a server system or a data processing system. For example, the memory system may throttle energy of a first memory using a second memory having a different characteristic from the first memory, control accesses to a memory region according to a refresh cycle, and control accesses to memories having different temperatures according to a priority of a request for each of the memories.

A media management operation can be performed at a memory sub-system at a current frequency. An operating characteristic associated with the memory sub-system can be identified. The operating characteristic can reflect at least one of a write count, a bit error rate, or a read-retry trigger rate. A determination can be made as to whether the identified operating characteristic satisfies an operating characteristic criterion. In response to determining that the operating characteristic satisfies the characteristic criterion, the media management operation can be performed at a different frequency relative to the current frequency.

According to one embodiment, a cache memory system includes a cache memory and a cache controller. The cache memory can store first data to be read or written by a processor. The cache controller is configured to execute a refresh. The refresh includes reading the first data stored in the cache memory and writing the read first data to the cache memory. When executing the refresh, the cache controller is configured to exchange the first data stored in a first area of the cache memory for second data stored in a second area of the cache memory.