Methods, systems, and devices for die location detection for grouped memory dies are described. A memory device may include multiple memory die that are coupled with a shared bus. In some examples, each memory die may include a circuit configured to output an identifier associated with a location of the respective memory die. For example, a first memory die may output a first identifier, based on receiving one or more signals, that identifies a location of the first memory die. Identifying the locations of the respective memory dies may allow for the dies to be individually accessed despite being coupled with a shared bus.

Devices and techniques for a storage backed memory package save trigger are disclosed herein. Data can be received via a first interface. The data is stored in a volatile portion of the memory package. Here, the memory package includes a second interface arranged to connect a host to a controller in the memory package. A reset signal can be received at the memory package via the first interface. The data stored in the volatile portion of the memory package can be saved to a non-volatile portion of the memory package in response to the reset signal.

Devices and techniques for a storage backed memory package save trigger are disclosed herein. Data can be received via a first interface. The data is stored in a volatile portion of the memory package. Here, the memory package includes a second interface arranged to connect a host to a controller in the memory package. A reset signal can be received at the memory package via the first interface. The data stored in the volatile portion of the memory package can be saved to a non-volatile portion of the memory package in response to the reset signal.

Memory with partial bank refresh is disclosed herein. In one embodiment, a memory system includes a memory controller and a memory device operably connected to the memory controller. The memory device includes (i) a memory array having a memory bank with a plurality of memory cells arranged in a plurality of memory rows and (ii) circuitry. In some embodiments, the circuitry is configured to disable at least one memory row of the memory bank from receiving refresh commands such that memory cells of the at least one memory row are not refreshed during refresh operations of the memory device. In some embodiments, the memory controller is configured to track memory rows that include utilized memory cells and/or to write data to the memory rows in accordance with a programming sequence of the memory device.

Methods, systems, and devices for triggering a refresh for non-volatile memory are described. A host system may communicate with a memory system, where the host system and memory system may be included within a vehicle (e.g., an automotive system). The host system may receive an indication that the vehicle is powering down and may enter a power off state in response to the indication. The host system may detect a trigger (e.g., using a time or temperature input) to switch back to a power on state while the vehicle is powered down, the trigger associated with performing a refresh operation at the memory system. The host system may enter the power on state and may transmit a power on command to the memory system. The memory system may perform the refresh operation on one or more memory cells while the vehicle remains in the powered down state.

Methods, systems, and devices for triggering a refresh for non-volatile memory are described. A host system may communicate with a memory system, where the host system and memory system may be included within a vehicle (e.g., an automotive system). The host system may receive an indication that the vehicle is powering down and may enter a power off state in response to the indication. The host system may detect a trigger (e.g., using a time or temperature input) to switch back to a power on state while the vehicle is powered down, the trigger associated with performing a refresh operation at the memory system. The host system may enter the power on state and may transmit a power on command to the memory system. The memory system may perform the refresh operation on one or more memory cells while the vehicle remains in the powered down state.

Methods, systems, and devices for vertical transistor fuse latches are described. An apparatus may include a substrate and a memory array that is coupled with the substrate. The apparatus may also include a latch that is configured to store information from a fuse for the memory array. The latch may be at least partially within an additional substrate separate from and above the substrate. The latch may include a quantity of p-type vertical transistors and a quantity of n-type vertical transistors each at least partially disposed within the additional substrate above the substrate.

A memory system includes: a first nonvolatile memory; a second volatile memory; a controller; a power control circuit configured to perform control such that a first voltage is applied to the first memory, the second memory, and the controller based on first power supplied from an external power supply; and a power storage device configured to supply second power to the power control circuit while the first power from the external power supply is interrupted. While the first power supplied from outside is interrupted, the power control circuit applies a second voltage based on the second power supplied from the power storage device to the first memory, the second memory, and the controller. The power control circuit stops the application of the second voltage to the second memory after the data is read from the second memory and before the data is written into the first memory.

A memory system includes: a first nonvolatile memory; a second volatile memory; a controller; a power control circuit configured to perform control such that a first voltage is applied to the first memory, the second memory, and the controller based on first power supplied from an external power supply; and a power storage device configured to supply second power to the power control circuit while the first power from the external power supply is interrupted. While the first power supplied from outside is interrupted, the power control circuit applies a second voltage based on the second power supplied from the power storage device to the first memory, the second memory, and the controller. The power control circuit stops the application of the second voltage to the second memory after the data is read from the second memory and before the data is written into the first memory.

A memory component includes a memory core comprising dynamic random access memory (DRAM) storage cells and a first circuit to receive external commands. The external commands include a read command that specifies transmitting data accessed from the memory core. The memory component also includes a second circuit to transmit data onto an external bus in response to a read command and pattern register circuitry operable during calibration to provide at least a first data pattern and a second data pattern. During the calibration, a selected one of the first data pattern and the second data pattern is transmitted by the second circuit onto the external bus in response to a read command received during the calibration. Further, at least one of the first and second data patterns is written to the pattern register circuitry in response to a write command received during the calibration.