Systems, methods and apparatus to read target memory cells having an associated reference memory cell configured to be representative of drift or changes in the threshold voltages of the target memory cells. The reference cell is programmed to a predetermined threshold level when the target cells are programmed to store data. In response to a command to read the target memory cells, estimation of a drift of the threshold voltage of the reference is performed in parallel with applying an initial voltage pulse to read the target cells. Based on a result of the drift estimation, voltage pulses used to read the target cells can be modified and/or added to account for the drift estimated using the reference cell.

An apparatus comprising an input to couple to a negative voltage source; and circuitry to detect whether the input has crossed a negative voltage threshold, wherein the circuitry comprises a first capacitor that is selectively coupled to the first input and a second capacitor that is selectively coupled to a second input coupled to a positive voltage source.

A nonvolatile memory apparatus includes a memory cell array and a memory control circuit. The memory cell array includes a plurality of sub arrays each including a plurality of memory cells coupled to a plurality of bit lines. The memory control circuit sequentially couples thereto, based on a single read command signal, at least a single bit line disposed on the respective sub arrays to sequentially access a memory cell coupled to the at least single bit line.

Provided are processing and an electronic device including the same. The processing apparatus includes a bit cell line comprising bit cells connected in series, a mirror circuit unit configured to generate a mirror current by replicating a current flowing through the bit cell line at a ratio, a charge charging unit configured to charge a voltage corresponding to the mirror current as the mirror current replicated by the mirror circuit unit is applied, and a voltage measuring unit configured to output a value corresponding to a multiply-accumulate (MAC) operation of weights and inputs applied to the bit cell line, based on the voltage charged by the charge charging unit.

A resistive random access memory array and an operation method therefor, and a resistive random access memory circuit. The resistive random access memory array includes multiple memory cells, multiple bit lines, multiple word lines, multiple block selection circuits, and multiple initialization circuits. Each memory cell includes a resistive random access memory device and a switching device. The multiple memory cells are arranged into multiple memory cell rows and multiple memory cell columns in a first direction and a second direction, and the multiple bit lines and the multiple memory cell columns are connected in one-to-one correspondence. Each block selection circuit is configured to write a read/write operation voltage into a correspondingly connected bit line in response to a block selection voltage. Each initialization circuit is configured to write an initialization operation voltage to a correspondingly connected bit line in response to an initialization control voltage.

A neuromorphic computing device a method of controlling thereof are provided. The neuromorphic computing device includes a first memory cell array including resistive memory cells that are connected to wordlines, bitlines and source lines, and configured to store data and generate read currents based on input signals and the data; a second memory cell array including reference resistive memory cells that are connected to reference wordlines, reference bitlines and reference source lines, and configured to generate reference currents; and an analog-to-digital converting circuit configured to convert the read currents into digital signals based on the reference currents, wherein a voltage is applied to the reference wordlines, the reference resistive memory cells are arranged in columns to form reference columns, and the reference columns are configured to generate column currents, and one of the reference currents is generated by averaging at least two of the column currents.

A memory includes first signal lines divided into groups respectively including m (m is an integer equal to or larger than 2) lines, and second signal lines. A memory cell array includes memory cells. (m+2) or more global signal lines are configured to apply a selection voltage to any of the first signal lines. First transistors are provided to correspond to each of the first signal lines in one-to-one correspondence and are connected between the first signal lines and the global signal lines. First selection signal lines are provided to respectively correspond to the groups, and are each connected to gate electrodes of the first transistors included in a corresponding one of the groups in common. The first signal lines located at both ends of each of any two of the groups which are adjacent to each other are connected to mutually different ones of the global signal lines.

In an embodiment, a method includes receiving, between a positive input terminal and a negative input terminal, a supply voltage, receiving a data signal, generating, by a voltage generator in a branch of a plurality of branches, a branch current as a function of a respective driving signal and of a regulated voltage, each branch connected between the positive input terminal and the negative input terminal, selectively activating the voltage generator as a function of a respective enabling signal and providing, between a positive output terminal and a negative output terminal, the regulated voltage to one or more driving circuits.

A memory device is disclosed. The memory device includes at least one reference cell and multiple sense amplifiers. The at least one reference cell having a first terminal coupled to a ground. Each of the sense amplifiers has a first terminal and a second terminal. The first terminal is coupled to one of multiple first data lines, and the second terminal is coupled to a second terminal of the at least one reference cell.

A resistive random access memory includes a memory cell including a resistive element having a resistance which varies according to a write operation and stores data according to the resistance of the resistive element, a reference resistive element having a resistance set to a first value, a voltage line set to a first voltage during a first write operation in which the resistance of the resistive element is varied from a second value higher than the first value to the first value, and a voltage control circuit arranged between first ends of the two resistive elements. The voltage control circuit adjusts a value of the first voltage supplied from the voltage line so as to reduce a difference between currents flowing through the two resistive elements during the first write operation, and supply the adjusted first voltage to the first ends of the two resistive elements.