A method of manufacturing a doped polycrystalline ceramic optical device includes mixing a plurality of transition metal complexes and a plurality of rare-earth metal complexes to form a metal salt solution, heating the metal salt solution to form a heated metal salt solution, mixing the heated metal salt solution and an organic precursor to induce a chemical reaction between the heated metal salt solution and the organic precursor to produce a plurality of rare-earth doped crystalline nanoparticles, and sintering the plurality of rare-earth doped nanoparticles to form a doped polycrystalline ceramic optical device having a rare-earth element dopant that is uniformly distributed within a crystal lattice of the doped polycrystalline ceramic optical device.

A method of manufacturing a doped polycrystalline ceramic optical device includes mixing a plurality of transition metal complexes and a plurality of rare-earth metal complexes to form a metal salt solution, heating the metal salt solution to form a heated metal salt solution, mixing the heated metal salt solution and an organic precursor to induce a chemical reaction between the heated metal salt solution and the organic precursor to produce a plurality of rare-earth doped crystalline nanoparticles, and sintering the plurality of rare-earth doped nanoparticles to form a doped polycrystalline ceramic optical device having a rare-earth element dopant that is uniformly distributed within a crystal lattice of the doped polycrystalline ceramic optical device.

The apparatus and the method for terahertz-based reading of data recorded in the Ruderman-Kittel-Kasuya-Yosida (RKKY)-based magnetic memory provided. The apparatus comprises: a Terahertz Magnon Laser configured to generate THz magnons; wherein the Terahertz Magnon Laser further comprises a Magnon Gain Medium (MGM) configured to support generation of non-equilibrium Terahertz magnons after the electric current is applied across the Terahertz Magnon Laser. The apparatus further comprises a magnetic reading bridge coupled to the Magnon Gain Medium of the Terahertz Magnon Laser; the magnetic reading bridge also coupled to a Ruderman-Kittel-Kasuya-Yosida (RKKY)-based magnetic memory cell; wherein magnetization of the magnetic reading bridge is induced by the overall magnetization of the RKKY)-based magnetic memory cell, and wherein the overall magnetization of the RKKY)-based magnetic memory cell is dependent on the information bit encoded into the magnetic memory cell, and wherein the encoded bit ‘1’ corresponds to the higher overall magnetization of the memory cell, and wherein the encoded bit ‘0’ corresponds to the lower overall magnetization of the memory cell. The apparatus further comprises a terahertz demodulator configured to demodulate the generated THz reading signal; wherein the higher detected THz frequency corresponds to reading bit ‘1’ encoded into the RKKY-based magnetic memory cell; and wherein the lower detected THz frequency corresponds to reading bit ‘0’ encoded into the RKKY-based magnetic memory cell.

The apparatus and the method for terahertz-based reading of data recorded in the Ruderman-Kittel-Kasuya-Yosida (RKKY)-based magnetic memory provided. The apparatus comprises: a Terahertz Magnon Laser configured to generate THz magnons; wherein the Terahertz Magnon Laser further comprises a Magnon Gain Medium (MGM) configured to support generation of non-equilibrium Terahertz magnons after the electric current is applied across the Terahertz Magnon Laser. The apparatus further comprises a magnetic reading bridge coupled to the Magnon Gain Medium of the Terahertz Magnon Laser; the magnetic reading bridge also coupled to a Ruderman-Kittel-Kasuya-Yosida (RKKY)-based magnetic memory cell; wherein magnetization of the magnetic reading bridge is induced by the overall magnetization of the RKKY)-based magnetic memory cell, and wherein the overall magnetization of the RKKY)-based magnetic memory cell is dependent on the information bit encoded into the magnetic memory cell, and wherein the encoded bit ‘1’ corresponds to the higher overall magnetization of the memory cell, and wherein the encoded bit ‘0’ corresponds to the lower overall magnetization of the memory cell. The apparatus further comprises a terahertz demodulator configured to demodulate the generated THz reading signal; wherein the higher detected THz frequency corresponds to reading bit ‘1’ encoded into the RKKY-based magnetic memory cell; and wherein the lower detected THz frequency corresponds to reading bit ‘0’ encoded into the RKKY-based magnetic memory cell.

A component includes a memory region containing optically active material, a control arrangement configured to provide at least one control signal configured to change optical properties of the optically active material, and a detector configured to detect a change in the optical properties of the optically active material. The detector includes an evaluation input region configured to receive at least one evaluation input signal and an evaluation output region configured to provide an evaluation output signal. The memory region is arranged between the evaluation input region and the evaluation output region, and the control arrangement adjoins the memory region.

A component includes a memory region containing optically active material, a control arrangement configured to provide at least one control signal configured to change optical properties of the optically active material, and a detector configured to detect a change in the optical properties of the optically active material. The detector includes an evaluation input region configured to receive at least one evaluation input signal and an evaluation output region configured to provide an evaluation output signal. The memory region is arranged between the evaluation input region and the evaluation output region, and the control arrangement adjoins the memory region.

A memory cell comprising a first layer of magnetic metal; a Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction spacer coupled to the first layer of magnetic metal; and a second layer of magnetic layer coupled to the RKKY spacer. The effective thickness of the RKKY spacer is changed by applied terahertz radiation resiling in changing the sign of RKKY interaction from a first sign of RKKY interaction to a second sign of RKKY interaction; thus, enabling an RKKY-tunable magnetic memory cell; wherein the first state of the memory corresponds to the first sign of RKKY interaction, and wherein the second state of the memory corresponds to the second sign of RKKY interaction.

A system and method for storing information in a quantum computer using a quantum storage ring. The method comprises cooling ions in the quantum storage ring to a low temperature; and binding the ions into a lattice structure, forming an ion Coulomb crystal.

Memory devices might include a plurality of memory cell pairs each configured to be programmed to store a digit of data; and control circuitry configured to cause the memory device to compare the stored digit of data of each memory cell pair to a received digit of data, determine whether a match condition or a no-match condition is indicated between the stored digit of data of each memory cell pair and the received digit of data, and deem a match condition to be met between the received digit of data and the stored digits of data of the plurality of memory cell pairs in response to a match condition being determined for a majority of memory cell pairs of the plurality of memory cell pairs.

Memory devices might include a plurality of memory cell pairs each configured to be programmed to store a digit of data; and control circuitry configured to cause the memory device to compare the stored digit of data of each memory cell pair to a received digit of data, determine whether a match condition or a no-match condition is indicated between the stored digit of data of each memory cell pair and the received digit of data, and deem a match condition to be met between the received digit of data and the stored digits of data of the plurality of memory cell pairs in response to a match condition being determined for a majority of memory cell pairs of the plurality of memory cell pairs.