A magnetic memory of an embodiment includes: a first magnetic member including a first and second portions and extending in a first direction; a first and second wirings disposed to be apart from the first magnetic member and extending in a second direction intersecting the first direction, the first and the second wirings being separated from each other in a third direction intersecting the first and second directions, the first magnetic member being disposed to be apart from a region between the first wiring and the second wiring in the first direction; and a second magnetic member surrounding at least parts of the first and second wirings, the second magnetic member including a third portion located to be more distant from the first magnetic member, a fourth portion located to be closer to the first magnetic member, and a fifth portion located in the region.

A magnetic memory device includes a magnetic track extending in a first direction. The magnetic track includes a lower magnetic layer, an upper magnetic layer on the lower magnetic layer, a non-magnetic pattern on the lower magnetic layer and at a side of the upper magnetic layer, and a spacer layer between the lower magnetic layer and the upper magnetic layer and extending between the lower magnetic layer and the non-magnetic pattern. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer. The non-magnetic pattern has a first surface and a second surface which are opposite to each other in a second direction perpendicular to the first direction. A junction surface between the non-magnetic pattern and the upper magnetic layer is inclined with respect to a reference surface perpendicular to the first surface and the second surface.

A magnetic domain wall movement type magnetic recording element includes: a first ferromagnetic layer which includes a ferromagnetic body; a non-magnetic layer which faces the first ferromagnetic layer; and a magnetic recording layer which faces a surface of the non-magnetic layer on a side opposite to the first ferromagnetic layer and extends in a first direction. The magnetic recording layer has a concave-convex structure on a second surface opposite to a first surface which faces the non-magnetic layer.

The present invention relates to a magnetic domain wall displacement type memory cell (racetrack memory device) that includes a 4d or 5d metal dusting layer (DL) at the ferromagnetic/heavy metal interface of the ferromagnetic (FM) structure or the synthetic antiferromagnetic (SAF) structure of the basic racetrack device structure.

A storage unit includes a U-shaped magnetic track, a first drive circuit, a second drive circuit, a first drive port, and a second drive port. The U-shaped magnetic track includes a first port, a second port, a first storage area, and a second storage area. By controlling input voltages of the first port, the second port, the first drive port, and the second drive port and driving the first drive circuit, a current pulse is generated in the first storage area, and a magnetic domain wall in the first storage area is driven to move. By controlling the input voltages of the first port, the second port, the first drive port, and the second drive port and driving the second drive circuit, a current pulse is generated in the second storage area, and a magnetic domain in the second storage area is driven to move.

A device for data storage and processing includes: at least two input racetrack elements having a plurality of first magnetization regions; at least one output racetrack element having a plurality of second magnetization regions, wherein a magnetization vector is adapted to switch from a first direction to the opposite one, or vice versa, by way of a magnetic field of reduced intensity compared with a magnetic field required to produce a similar switching of a magnetization vector of the first magnetization region, wherein the input racetrack elements and output racetrack element are configured in such a way as to constitute at least one elementary logic gate, wherein at least two of the first magnetization regions are magnetically coupled to at least one of the second magnetization regions.

A magnetic memory device may include a magnetic track, which is extended in a first direction, and a first electrode, which is provided at a biasing point of the magnetic track and is configured to apply a voltage to the magnetic track. The magnetic track includes a first region between a first end of the magnetic track and the biasing point and a second region between the biasing point and a second end of the magnetic track. The first electrode may be configured to cause a difference between a current density in the first region and a current density in the second region.

According to one embodiment, a shift register memory includes blocks and a control circuit. The blocks each includes data storing shift strings. Each of the data storing shift strings includes layers. The control circuit performs storing and reading data by shifting one layer of the layers, in a direction along each of the data storing shift strings. The reading includes reading data from a first layer of the layers. The storing includes storing data to a second layer of the layers. The control circuit reads first data stored in one or more third layers of the layers, the one or more third layers being successive from the first layer, determines a shift parameter in accordance with the reading of the first data, and performs the reading using the determined shift parameter.

A magnetoresistance effect element includes a underlayer, a protective layer, a laminated body located between the underlayer and the protective layer and including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer in order from a side closest to the underlayer, and an intermediate layer located between the underlayer and the first ferromagnetic layer, or between the second ferromagnetic layer and the protective layer, wherein, one ferromagnetic layer selected from the first ferromagnetic layer and the second ferromagnetic layer and be in contact with the intermediate layer is a Heusler alloy having a Co basis, and a main component of the intermediate layer is an element other than Co among elements constituting the Heusler alloy having the Co basis.

A magnetic memory according to an embodiment includes: a magnetic member having a cylindrical form, the magnetic member including a first end portion and a second end portion and extending in a first direction from the first end portion to the second end portion, the first end portion having an end face, which includes a face inclined with respect to a plane perpendicular to the first direction.