The present invention relates to a magnetic domain wall displacement type memory cell (racetrack memory device) that includes a 4d or 5d metal dusting layer (DL) at the ferromagnetic/heavy metal interface of the ferromagnetic (FM) structure or the synthetic antiferromagnetic (SAF) structure of the basic racetrack device structure.

Apparatuses including a first-in first-out circuit are described. An example apparatus includes: a first-in first-out circuit including a first latch, a second latch and a logic circuit coupled in series. The first latch receives first data and latches the first data responsive to a first input pointer signal. The second latch receives the latched first data from the first latch and latches the received first data responsive to a second input pointer signal that has a different phase from the first input pointer signal and thus provides a second data. The logic circuit receives the second data and an output pointer signal and further provides an output data responsive to the output pointer signal.

Apparatuses including a first-in first-out circuit are described. An example apparatus includes: a first-in first-out circuit including a first latch, a second latch and a logic circuit coupled in series. The first latch receives first data and latches the first data responsive to a first input pointer signal. The second latch receives the latched first data from the first latch and latches the received first data responsive to a second input pointer signal that has a different phase from the first input pointer signal and thus provides a second data. The logic circuit receives the second data and an output pointer signal and further provides an output data responsive to the output pointer signal.

Apparatuses including a first-in first-out circuit are described. An example apparatus includes: a first-in first-out circuit including a first latch, a second latch and a logic circuit coupled in series. The first latch receives first data and latches the first data responsive to a first input pointer signal. The second latch receives the latched first data from the first latch and latches the received first data responsive to a second input pointer signal that has a different phase from the first input pointer signal and thus provides a second data. The logic circuit receives the second data and an output pointer signal and further provides an output data responsive to the output pointer signal.

According to an embodiment, a magnetic storage device includes a magnetic member, a switch element, a shift control circuit, a base current control circuit, and a controller. The magnetic member includes a portion extending in a direction. The switch element is connected in series to the magnetic member, and maintains an on state in a case where a current equal to or larger than a holding current value continues to flow in the on state. The shift control circuit shifts magnetic domains retained in the magnetic member. The controller causes the base current control circuit to supply a base current to the switching element and causes the shift control circuit to supply a shift pulse current a plurality of times.

Apparatuses including a first-in first-out circuit are described. An example apparatus includes: a first-in first-out circuit including a first latch, a second latch and a logic circuit coupled in series. The first latch receives first data and latches the first data responsive to a first input pointer signal. The second latch receives the latched first data from the first latch and latches the received first data responsive to a second input pointer signal that has a different phase from the first input pointer signal and thus provides a second data. The logic circuit receives the second data and an output pointer signal and further provides an output data responsive to the output pointer signal.

According to an embodiment, a magnetic storage device includes a magnetic member, a switch element, a shift control circuit, a base current control circuit, and a controller. The magnetic member includes a portion extending in a direction. The switch element is connected in series to the magnetic member, and maintains an on state in a case where a current equal to or larger than a holding current value continues to flow in the on state. The shift control circuit shifts magnetic domains retained in the magnetic member. The controller causes the base current control circuit to supply a base current to the switching element and causes the shift control circuit to supply a shift pulse current a plurality of times.

A system and method for providing a physically unclonable function (PFU) is described. In operation, the method includes applying a domain wall shift pulse challenge to a plurality of nanowires of a domain wall memory (DWM) array, wherein the nanowires of the domain wall memory (DWM) array have process induced variations, resulting in pinning potentials which affect the velocity of the domain walls along the length of the nanowires. Following the application of the domain wall shift pulse, the response to the challenge is determined by measuring the response of the plurality of nanowires of the domain wall memory to the applied domain wall shift pulse challenge to provide a physically unclonable function (PUF) for the integrated circuit.

A memory system according to an embodiment includes a plurality of magnetic nanowires, a read unit that reads data from the magnetic nanowires, a shift control unit that shifts domain walls in the magnetic nanowires, and a read control unit. The read control unit is configured to control the read unit to read the data from the magnetic nanowires in parallel, store two or more of the data read in parallel, and when the data corresponding to a first magnetic nanowire of the magnetic nanowires are delayed or advanced as compared to the data corresponding to a second magnetic nanowire of the magnetic nanowires, determines a misalignment in the data and correct the data based on the misalignment.

At least one magnetic nanowire including multiple cells; a write-read head combined with a first contact of the magnetic nanowire; and a read-only head combined with a second contact of the magnetic nanowire. Data stored through a write head included in the write-read head are read in sequence through a read head included in the write-read head in response to a last in first out (LIFO) method.