A memory module may include: a battery; a plurality of devices including a first memory, a second memory, and a controller; and a power management integrated circuit configured to adjust a level of a battery power, received from the battery, and configured to supply a power supply voltage to each of the plurality of devices.

An electronic device includes: a system-on-chip (SoC) including a processor, a near-memory controller controlled by the processor, and a far-memory controller controlled by the processor; a near-memory device including a first memory channel configured to communicate with the near-memory controller and operate in a first mode of a plurality of modes, and a second memory channel configured to communicate with the near-memory controller and operate in a second mode different from the first mode from among the plurality of modes; and a far-memory device configured to communicate with the far-memory controller. The first memory channel is further configured to, based on a command from the near-memory controller, change an operation mode from the first mode to the second mode.

A system for dual mode operation having power saving and active modes in a stacked circuit topology having logic preservation is provided. The system includes a pre-charge circuit and a sleep mode control circuit for providing a signal to disable a plurality of circuit elements and switching a mode of the system, the sleep mode control circuit being coupled to the pre-charge circuit and further being coupled to a logic function circuit, wherein the plurality of circuit elements comprise logic gates and transistor devices. The system also includes a keeper circuit coupled to the global bitline, and the logic function circuit coupled to a solar bitline, wherein the logic function circuit preserves a state of the solar bitline, the state of the global bitline determines the state of the solar bitline. The system includes an effective pull-up transistor coupled to the sleep mode control circuit and the logic function circuit.

Provided are electronic devices and methods for power reduction in systems with multiple memory ranks. The electronic device includes a memory system including first and second memory ranks and a memory controller connected to the memory system and configured to control power of the memory system. The memory controller being configured to cause the first memory rank to enter an idle power down (IPD) state during memory access in which a data toggle time without a data bubble is equal to or greater than an IPD minimum gain duration in another bank access for the second memory rank.

Methods, systems, and devices for memory device operation are described. A memory device may operate in different modes in response to various conditions and user constraints. Such modes may include a power-saving or low power mode. While in the low power mode, the memory device may refrain from operations, such as self-refresh operations, on one or more of the memory array(s) included in the memory device. The memory device may deactivate external interface components and components that may generate operating voltages for the memory array(s), while the memory device may continue to power circuits that store operating information for the memory device. The memory device may employ similar techniques in other operating modes to accommodate or react to different conditions or user constraints.

Systems and methods are disclosed, including rebuilding a logical-to-physical (L2P) data structure of a storage system subsequent to relocating assigned marginal group of memory cells of a memory array of the storage system, such as when resuming operation from a low-power state, including an asynchronous power loss (APL).

A memory controller configured to control a non-volatile memory device includes: a signal generator configured to generate a plurality of control signals comprising a first signal and a second control signal; a core configured to provide a command for an operation of the non-volatile device; and a controller interface circuit configured to interface with the non-volatile memory device, wherein the controller interface circuit comprises a first transmitter connected to a first signal line and a second signal line; and a first receiver connected to the first signal line, and the first control signal and the second control signal are respectively transmitted to the non-volatile memory device through the first signal line and the second signal line.

Systems and methods are provided for controlling a wake-up operation of a memory circuit. The memory circuit is configured to precharge the bit lines of a memory array sequentially during wakeup. A sleep signal is received by the first bit line of a memory cell and then a designed delay occurs prior to the precharge of a second complementary bit line. The sleep signal may then precharge the bit lines of a second memory cell with further delay between the precharge of each bit line. The memory circuit is configured to precharge both bit lines of a memory cell at the same time when an operation associated with that cell is designated.

An electronic system includes a controller configured to detect a bank in a standby state for a write operation between a first bank and a second bank during a refresh operation period and output data for performing a post-write operation to the bank in the standby state for the write operation. The electronic system also includes an electronic device including the first and second banks. The electronic device is configured to latch the data in an input/output control circuit connected to the bank in the standby state for the write operation.

A semiconductor chip capable of improving signal quality includes a host device, a first memory device which is spaced part from the host device and connected to the host device, a repeater module which is connected to the host device and the first memory device, and a second memory device which is spaced apart from the host device and connected to the repeater module. The first memory device receives a data signal from the host device and generates a recovery clock signal, using the data signal. The repeater module receives the recovery clock signal from the first memory device, receives a first input signal from the host device, and samples the first input signal on the basis of the recovery clock signal to generate a sampling signal. The second memory device receives the sampling signal.