G11C29/36

SEMICONDUCTOR DEVICE AND MEMORY SYSTEM

A semiconductor device includes a multilevel receiver including a signal determiner receiving a plurality of multilevel signals and outputting a result of mutual comparison of the plurality of multilevel signals as an N-bit signal, where N is a natural number equal to or greater than 2. A decoder restores a valid signal among the N-bit signals from the signal determiner to an M-bit data signal, where M is a natural number less than N. A clock generator receives a reference clock signal, generates an input clock signal using the reference clock signal, inputs the input clock signal to the signal determiner, and determines a phase of the input clock signal based on an occurrence probability of an invalid signal not restored to the M-bit data signal among the N-bit signals.

Apparatuses and methods for direct access hybrid testing

Embodiments of the disclosure are drawn to apparatuses, systems, and methods for direct access hybrid testing. A memory device, such as a high bandwidth memory (HBM) may include direct access terminals. During a testing procedure, test instructions may be provided to the memory through the direct access terminals. The test instructions include a data pointer which is associated with one of a plurality of test patterns pre-loaded in the memory and an address. The selected test pattern may be written to, and subsequently read from, the memory cells associated with the address. The read test pattern may be compared to the selected test pattern to generate result information. The test patterns may be loaded to the memory, and the result information may be read out from the memory, in an operational mode different than the operational mode in which the test instructions are provided.

Apparatuses and methods for direct access hybrid testing

Embodiments of the disclosure are drawn to apparatuses, systems, and methods for direct access hybrid testing. A memory device, such as a high bandwidth memory (HBM) may include direct access terminals. During a testing procedure, test instructions may be provided to the memory through the direct access terminals. The test instructions include a data pointer which is associated with one of a plurality of test patterns pre-loaded in the memory and an address. The selected test pattern may be written to, and subsequently read from, the memory cells associated with the address. The read test pattern may be compared to the selected test pattern to generate result information. The test patterns may be loaded to the memory, and the result information may be read out from the memory, in an operational mode different than the operational mode in which the test instructions are provided.

Memory system
11581055 · 2023-02-14 · ·

A memory system includes a memory device and a controller. The controller is coupled to the memory device through input/output (I/O) lines. The controller includes an interface component and a dummy power consumption component. The interface component performs a signal training operation for adjusting a timing of a clock signal, to which test data is synchronized. The dummy power consumption component performs a dummy power consumption operation while the signal training operation is performed.

Memory system
11581055 · 2023-02-14 · ·

A memory system includes a memory device and a controller. The controller is coupled to the memory device through input/output (I/O) lines. The controller includes an interface component and a dummy power consumption component. The interface component performs a signal training operation for adjusting a timing of a clock signal, to which test data is synchronized. The dummy power consumption component performs a dummy power consumption operation while the signal training operation is performed.

Adaptive read disturb algorithm for NAND storage accounting for layer-based effect
11581058 · 2023-02-14 · ·

A storage device includes 3D NAND including layers of multi-level cells. Test reads are performed by reading only LSB pages and reading layers in a repeating pattern of reading two and skipping two. A test read of a block is performed when its read count reaches a threshold. The counter threshold is updated according to errors detected during the test read such that the frequency of test reads increases with increase in errors detected. Counter thresholds according to errors may be specified in a table. The table may be selected as corresponding to a range of PEC values including the current PEC count of the 3D NAND. Each table further specifies a number of errors that will result in garbage collection being performed.

Adaptive read disturb algorithm for NAND storage accounting for layer-based effect
11581058 · 2023-02-14 · ·

A storage device includes 3D NAND including layers of multi-level cells. Test reads are performed by reading only LSB pages and reading layers in a repeating pattern of reading two and skipping two. A test read of a block is performed when its read count reaches a threshold. The counter threshold is updated according to errors detected during the test read such that the frequency of test reads increases with increase in errors detected. Counter thresholds according to errors may be specified in a table. The table may be selected as corresponding to a range of PEC values including the current PEC count of the 3D NAND. Each table further specifies a number of errors that will result in garbage collection being performed.

ATPG TESTING METHOD FOR LATCH BASED MEMORIES, FOR AREA REDUCTION

Disclosed herein is logic circuitry and techniques for operation that hardware to enable the construction of first-in-first-out (FIFO) buffers from latches while permitting stuck-at-1 fault testing for the enable pin of those latches, as well as testing the data path at individual points through the FIFO buffer.

ATPG TESTING METHOD FOR LATCH BASED MEMORIES, FOR AREA REDUCTION

Disclosed herein is logic circuitry and techniques for operation that hardware to enable the construction of first-in-first-out (FIFO) buffers from latches while permitting stuck-at-1 fault testing for the enable pin of those latches, as well as testing the data path at individual points through the FIFO buffer.

SYSTEM AND METHOD FOR TESTING MULTICORE SSD FIRMWARE BASED ON PRECONDITIONS GENERATION
20230038605 · 2023-02-09 ·

Embodiments of the present disclosure provide a system for testing multicore firmware (FW) in a memory system and a method thereof. A test system includes a test device and a storage device including a plurality of flash translation layer (FTL) cores, each FTL core associated with multiple memory blocks. The test device generates test preconditions for the plurality of FTL cores and provides the test preconditions to the plurality of FTL cores, the test preconditions being different from each other. Each of the plurality of FTL cores performs one or more test operations based on a corresponding test precondition of the test preconditions.