A semiconductor device includes a multilevel receiver including a signal determiner receiving a plurality of multilevel signals and outputting a result of mutual comparison of the plurality of multilevel signals as an N-bit signal, where N is a natural number equal to or greater than 2. A decoder restores a valid signal among the N-bit signals from the signal determiner to an M-bit data signal, where M is a natural number less than N. A clock generator receives a reference clock signal, generates an input clock signal using the reference clock signal, inputs the input clock signal to the signal determiner, and determines a phase of the input clock signal based on an occurrence probability of an invalid signal not restored to the M-bit data signal among the N-bit signals.

The signal generator includes the following: an oscillation generation circuit, configured to generate an initial oscillation signal based on an oscillation control signal; a duty cycle correction circuit, connected to an output end of the oscillation generation circuit and configured to adjust a duty cycle of the initial oscillation signal based on a duty cycle control signal, to generate an adjusted oscillation signal; an output interface, connected to an output end of the duty cycle correction circuit and configured to output the adjusted oscillation signal to an external test system; and an amplitude adjustment circuit, connected to the output end of the duty cycle correction circuit and configured to adjust an amplitude of the adjusted oscillation signal based on an amplitude control signal, to generate a test signal.

A testing system includes a plurality of memory circuits and a testing circuit. The testing circuit is coupled to the memory circuits. The testing circuit is configured to perform a read/write operation on the memory circuits, and each of the memory circuits has a read/write starting time point corresponding to the read/write operation. The testing circuit is further configured to control the read/write starting time points of the memory circuits to be different from each other.

A multiple operating-mode comparator system can be useful for high bandwidth and low power automated testing. The system can include a gain stage configured to drive a high impedance input of a comparator output stage, wherein the gain stage includes a differential switching stage coupled to an adjustable impedance circuit, and an impedance magnitude characteristic of the adjustable impedance circuit corresponds to a bandwidth characteristic of the gain stage. The comparator output stage can include a buffer circuit coupled to a low impedance comparator output node. The buffer circuit can provide a reference voltage for a switched output signal at the output node in a higher speed mode, and the buffer circuit can provide the switched output signal at the output node in a lower power mode.

A method and a device for memory testing, and a computer-readable storage medium are provided. In the method, an instruction signal is sent to the memory, the instruction signal comprising a randomly generated write instruction or read instruction; a valid Column Address Strobe (CAS) instruction for ensuring running of the instruction signal is randomly inserted before the instruction signal by detecting a specific type of the instruction signal, and at least one of a redundant CAS instruction or invalid command irrelevant to the instruction signal is randomly generated and inserted; and the memory is enabled to run the instruction signal, the inserted valid CAS instruction, and the at least one of the redundant CAS instruction or the invalid command, and the running of the memory is tested.

An electronic device includes a dock dividing circuit configured to generate sampling clocks, alignment clocks and output clocks by dividing a frequency of a write clock; and a data alignment circuit configured to, in a first operation mode, receive input data having any one level among a first level to a fourth level and generate alignment data by aligning the input data in synchronization with the sampling clocks, the alignment clocks and the output clocks, and to, in a second operation mode, receive the input data having any one level of the first level and the fourth level and generate the alignment data by aligning the input data in synchronization with the sampling clocks, the alignment clocks and the output clocks.

Noise injection systems and methods for conducting power noise susceptibility tests on memory systems, including solid state drives. A noise injection system comprises a power selector to deliver a voltage at a first or second level according to a frequency level indicated by a frequency select signal; a noise signal relay to receive a frequency noise signal and to deliver a low or high frequency noise component of the frequency noise signal according to the frequency level of the frequency select signal; and an amplification assembly, responsive to the frequency select signal and which receives the first or second level voltage based on the frequency level of the frequency select signal, receives and amplifies the high frequency noise component when the frequency select signal indicates a high frequency level, and receives and amplifies the low frequency noise component when the frequency select signal indicates a low frequency level.

A test and measurement instrument includes a first data channel including a first data converter operating at a first rate, and a second data channel including a second data converter operating at a second rate that is different than the first rate. Rate controls may include a clock generation circuit. The clock generation circuit includes an intermediate frequency generator structured to generate an intermediate frequency clock from a first clock reference signal, a first frequency clock generator structured to generate a first frequency clock directly from the intermediate frequency clock, and a second frequency clock generator structured to generate a second frequency clock directly from the intermediate frequency clock. The first frequency clock may be used to control the rate of the first data channel, and the second frequency clock may be used to control the rate of the second data channel. Methods are also described.

A power supply is configured to perform an at least partial compensation of a voltage variation caused by a load change using a voltage variation compensation mechanism which is triggered in response to an expected load change. An Automated test equipment for testing a device under test comprises a power supply, which is configured to supply the device under test. The automated test equipment comprises a pattern generator configured to provide one or more stimulus signals for the device under test. The power supply is configured to perform an at least partial compensation of a voltage variation caused by a load change using a voltage variation compensation mechanism which is activated in synchronism with one or more of the stimulus signals and/or in response to one or more response data signals from the device under test. Corresponding methods and a computer program are also described.

The present application provides a parameter setting method and apparatus, a system, and a storage medium. The parameter setting method includes: obtaining first setting values of multiple memory parameters and storage locations of the multiple memory parameters in a non-volatile memory; generating a first parameter setting instruction according to the first setting value and the storage location of each memory parameter; and sending the first parameter setting instruction to a test device, so that the test device sets the memory parameter stored at the storage location in the non-volatile memory as the first setting value.