1. The present disclosure is drawn to, among other things, a method for accessing memory using dual standby modes, the method including receiving a first standby mode indication selecting a first standby mode from a first standby mode or a second standby mode, configuring a read bias system to provide a read bias voltage and a write bias system to provide approximately no voltage, or any voltage outside the necessary range for write operation, based on the first standby mode, receiving a second standby mode indication selecting the second standby mode, and configuring the read bias system to provide at least the read bias voltage and the write bias system to provide a write bias voltage based on the second standby mode, the read bias voltage being lower than the write bias voltage.

In a semiconductor storage device including a plurality of memory cells formed at a laminated substrate including a support layer, an insulating layer on the support layer, and a semiconductor layer on the insulating layer, the plurality of memory cells each include a floating gate transistor and a selection transistor. The floating gate transistor includes a first source region, a first drain region, a first body region, a first body contact region, a floating gate insulating film, and a floating gate electrode, and the selection transistor includes a second source region, a second drain region, a second body region, a second body contact region insulated from the first body contact region, a selection gate insulating film, and a selection gate electrode.

The present disclosure is drawn to, among other things, a method for accessing memory using dual standby modes, the method including receiving a first standby mode indication selecting a first standby mode from a first standby mode or a second standby mode, configuring a read bias system to provide a read bias voltage and a write bias system to provide approximately no voltage, or any voltage outside the necessary range for write operation, based on the first standby mode, receiving a second standby mode indication selecting the second standby mode, and configuring the read bias system to provide at least the read bias voltage and the write bias system to provide a write bias voltage based on the second standby mode, the read bias voltage being lower than the write bias voltage.

A nonvolatile memory device comprises a first semiconductor layer including, an upper substrate, and a memory cell array in which a plurality of word lines on the upper substrate extend in a first direction and a plurality of bit lines extend in a second direction. The nonvolatile memory device comprises a second semiconductor layer under the first semiconductor layer in a third direction perpendicular to the first and second directions, the second semiconductor layer including, a lower substrate, and a substrate control circuit on the lower substrate and configured to output a bias voltage to the upper substrate. The second semiconductor layer is divided into first through fourth regions, each of the first through fourth regions having an identical area, and the substrate control circuit overlaps at least a portion of the first through fourth regions in the third direction.

Apparatus and methods are disclosed for providing a bias, comprising a bias generator circuit including a high voltage (HV) circuit configured to generate a regulated high voltage (HV) from an HV line and provide the regulated HV at an HV regulated line and a low voltage (LV) circuit configured to generate a low voltage (LV) differential from the HV line and to provide the LV differential at an LV line.

A memory device which includes a control logic circuit that generates a write enable signal based on a write command, a first memory cell connected with a first word line and a first column line, a first write circuit that receives first write data to be stored in the first memory cell through a first write input/output line and applies a write voltage to a first data line based on the first write data in response to the write enable signal, and a first column multiplexer circuit that selects the first column line and connects the first column line with the first data line in response to a first column select signal, such that the write voltage is applied to the first memory cell. The first write circuit applies the write voltage to a bulk port of the first column multiplexer circuit in response to the write enable signal.

A semiconductor device and a method for controlling body bias thereof capable of properly controlling body bias of a transistor even in a case where process variation occurs are provided. Operation speeds of ring oscillators ROSCn and ROSCp respectively change due to an influence of process variation at an NMOS transistor MN side and a PMOS transistor MP side. Speed/bias data represent a correspondence relationship between the operation speeds of the ring oscillators ROSCn and ROSCp and set values V1n and V1p of body biases VBN and VBP. A body bias controller receives speed values Sn and Sp measured for the ring oscillators ROSCn and ROSCp to which the body biases VBN and VBP based on default values are respectively applied, and obtains the set values V1n and V1p on the basis of the speed/bias data.

A memory device includes a charge pump connected to a power supply voltage and including a plurality of stages to output an output voltage, a stage counter configured to output a count value that incrementally increases to a number of the stages, and a regulator configured to compare the output voltage with a reference output voltage of the charge pump that is generated using the incrementally increasing count value obtained by the stage counter, and to output a pump operation signal at a time when the reference output voltage becomes greater than or equal to the output voltage, wherein the charge pump operates in response to the pump operation signal.

A physical unclonable function (PUF)-based method for enhancing system reliability is provided, including: requesting, by a client, data transmission with a server; randomly selecting, by the server, a plurality of metal oxide semiconductor (MOS) devices in an MOS array, and acquiring positional information of the plurality of MOS devices; calculating, by the server, a probabilistic PUF that the trap in each of the plurality of MOS devices is occupied by a carrier and constructing a probabilistic model; randomly generating, by the server, detection time according to the probabilistic model and sending the detection time and the positional information to the client; and determining, by the server, an occupancy probability of the trap in each of the plurality of MOS devices at the detection time according to the probabilistic model, and generating a theoretical code key.

A switching driver circuit may have an output stage having an output switch connected between a switching voltage node and an output node. A switch network may control a switching voltage at the switching voltage node so that in one mode the switching voltage node is coupled to a positive voltage and in another mode the switching voltage node is coupled to ground voltage via a first switching path of the switch network. The circuit may also include an n-well switching block operable to, when the first switching voltage node is coupled to a positive voltage, connect the n-well of the first output switch to the switching voltage node, and, when the first switching voltage node is coupled to the ground voltage, connect the n-well of the first output switch to a first ground which is separate to the first switching voltage node and independent of the first switching path.