Methods, systems, and devices for voltage regulation distribution for stacked memory are described. A stacked memory device may support various techniques for coupling between voltage regulation circuitry of multiple memory dies, or for coupling of voltage regulation circuitry of some memory dies with circuitry associated with operating memory arrays of other memory dies. In some examples, such techniques may include cross-coupling of voltage regulation circuitry based on access activity or a degree of access activity for array circuitry. In some examples, such techniques may include isolating voltage regulation circuitry based on access activity or a degree of access activity for array circuitry. Dynamic coupling or isolation between voltage regulation circuitry may be supported by various signaling related to a stacked memory device, such as signaling between the stacked memory dies, signaling between a memory die and a central controller, or signaling between the stacked memory device and a host device.

An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.

A microelectronic device comprises a base structure, a memory array overlying the base structure, and a conductive pad tier overlying the memory array. The base structure comprises a logic region including logic devices. The memory array comprises vertically extending strings of memory cells within a horizontal area of the logic region of the base structure. The conductive pad tier comprises first conductive pads substantially outside of the horizontal area of the logic region of the base structure, and second conductive pads horizontally neighboring the first conductive pads and within the horizontal area of the logic region of the base structure. Memory devices and electronic systems are also described.

An apparatus including reconfigurable interface circuits and associated systems and methods are disclosed herein. An reconfigurable interface circuit may include an output buffer and an input buffer coupled to a connector for respectively generating and receiving signals. The reconfigurable interface circuit may include a control circuit configured to control operation of the input and output buffers along with additional circuits to selectively implement one or more from a set of selectable communication settings.

Various aspects relate to a startup circuit for a bandgap reference circuit, wherein a target voltage value is associated with the bandgap reference circuit, the target voltage value being indicative of a startup condition of the bandgap reference circuit that triggers a stable on-state of the bandgap reference circuit, wherein the startup circuit is configured to: provide a startup voltage at the bandgap reference circuit to trigger a start of an operation of the bandgap reference circuit; receive a feedback voltage, wherein the feedback voltage is representative of a startup condition of the bandgap reference circuit; and either increase the startup voltage at the bandgap reference circuit in the case that a voltage value of the feedback voltage is less than the target voltage value, or stop providing the startup voltage at the bandgap reference circuit in the case that the voltage value of the feedback voltage is equal to or greater than the target voltage value.

A high resolution impedance adjustment (ZQ) calibration method using a hidden least significant bit (HLSB) is provided. The high resolution ZQ calibration method generates a data input/output (DQ) code of n+1 bits without a calibration time increase by adding the hidden least significant bit (HLSB) to a ZQ code of n bits output in a ZQ calibration operation of an impedance adjustment (ZQ) pad. A change in a termination resistance of the DQ pad is reduced as small as possible by the DQ code of n+1 bits.

Various apparatuses, systems, methods, and media are disclosed to provide over-voltage protection to a data interface of a multi-protocol memory card that includes a first communication interface and a second communication interface that enable communication using different protocols. An interface voltage protection circuit includes a control circuit configured to receive a first supply voltage for operating the first communication interface. The interface voltage protection circuit further includes a pull-down circuit operatively connected with the control circuit, configured to pull down a voltage at a supply voltage rail of the second communication interface such that a voltage at a plurality of connector terminals of the second communication interface is lower than the first supply voltage.

Apparatuses and methods related to logging failed authentication attempts. Failed authentication attempts can be logged in the circuitry by degrading the circuitry. The degradation can signal a fail authentication attempt while an amount of the degradation can represent a timing of the error.

Systems and methods are provided for limiting a negative bit line voltage in a SRAM cell. A voltage limiter circuit may be implemented in a write driver to control the magnitude of negative voltage imposed on a bit line. The voltage limiter circuit can produce the required magnitude of negative bit line voltage at lower operating voltage levels. The voltage limiter circuit can also limit the magnitude of negative bit line voltage to not exceed a predetermined value. The reduction of the magnitude of the negative bit line voltage can reduce the active power of a SRAM cell.

A memory device includes a voltage generator configured to generate a reference voltage for transmission to at least one component of the memory device. The voltage generator includes a first input to receive a first signal having a first voltage value. The voltage generator also includes a second input to receive a second signal having a second voltage value. The voltage generator further includes a first circuit configured to generate third voltage and a second circuit coupled to the first circuit to receive the third voltage value, wherein the second circuit receives the first signal and the second signal and is configured to utilize the third voltage value to facilitate comparison of the first voltage value and the second voltage value to generate an output voltage.