A signal modulation apparatus, a memory storage apparatus, and a signal modulation method are disclosed. The signal modulation apparatus includes an observation circuit, a signal modulation circuit, and a phase control circuit. The signal modulation circuit is configured to generate a second signal according to a first signal and a reference clock signal. A frequency of the first signal is different from a frequency of the second signal. The phase control circuit is configured to obtain an observation information via the observation circuit. The observation information reflects a process variation of at least one electronic component in the signal modulation apparatus. The phase control circuit is further configured to control an offset between the first signal and the reference clock signal according to the observation information.

Methods, systems, and devices for selective access for grouped memory dies are described. A memory device may be configured with a select die access protocol for a group of memory dies that share a same channel. The protocol may be enabled by one or more commands from the host device, which may be communicated to each of the memory dies of the group via the channel. The command(s) may indicate a first set of one or more memory dies of the group for which a set of commands may be enabled and may also indicate a second set of one or more memory dies of the group for which at least a subset of the set of commands is disabled. When the select die access mode is enabled, the disabled memory dies may be restricted from performing the subset of commands received via the channel.

A memory controller component of a memory system stores memory access requests within a transaction queue until serviced so that, over time, the transaction queue alternates between occupied and empty states. The memory controller transitions the memory system to a low power mode in response to detecting the transaction queue is has remained in the empty state for a predetermined time. In the transition to the low power mode, the memory controller disables oscillation of one or more timing signals required to time data signaling operations within synchronous communication circuits of one or more attached memory devices and also disables one or more power consuming circuits within the synchronous communication circuits of the one or more memory devices.

An electronic device includes: a system-on-chip (SoC) including a processor, a near-memory controller controlled by the processor, and a far-memory controller controlled by the processor; a near-memory device including a first memory channel configured to communicate with the near-memory controller and operate in a first mode of a plurality of modes, and a second memory channel configured to communicate with the near-memory controller and operate in a second mode different from the first mode from among the plurality of modes; and a far-memory device configured to communicate with the far-memory controller. The first memory channel is further configured to, based on a command from the near-memory controller, change an operation mode from the first mode to the second mode.

Provided is a memory device including a delay circuit having gate insulation films with thicknesses different from each other. The memory device includes a delay circuit configured to input an input signal and output an output signal, and circuit blocks configured to control an operation of reading or writing memory cell data in response to the input signal or the output signal. One of transistors constituting a circuit block has a gate insulation film having such a thickness that an effect of negative biased temperature instability (NBTI) or positive biased temperature instability (PBTI) on the transistors is minimized. The delay circuit may be affected little by a shift in a threshold voltage that may be caused by NTBI or PBTI, and thus, achieve target delay time.

A memory component includes a memory core comprising dynamic random access memory (DRAM) storage cells and a first circuit to receive external commands. The external commands include a read command that specifies transmitting data accessed from the memory core. The memory component also includes a second circuit to transmit data onto an external bus in response to a read command and pattern register circuitry operable during calibration to provide at least a first data pattern and a second data pattern. During the calibration, a selected one of the first data pattern and the second data pattern is transmitted by the second circuit onto the external bus in response to a read command received during the calibration. Further, at least one of the first and second data patterns is written to the pattern register circuitry in response to a write command received during the calibration.

Apparatus and methods for operation of a memory controller, memory device and system are described. During operation, the memory controller transmits a read command which specifies that a memory device output data accessed from a memory core. This read command contains information which specifies whether the memory device is to commence outputting of a timing reference signal prior to commencing outputting of the data. The memory controller receives the timing reference signal if the information specified that the memory device output the timing reference signal. The memory controller subsequently samples the data output from the memory device based on information provided by the timing reference signal output from the memory device.

A memory module is operable in a computer system having a memory controller and a system bus and comprises memory devices organized in one or more ranks and in a plurality of groups, and circuits configurable to receive from the memory controller a system clock and input control and address (C/A) signals, generate a module clock signal and module C/A signals in response to the system clock and input C/A signals, generate a plurality of local clock signals corresponding, respectively, to the plurality of groups of memory devices, and output the plurality of local clock signals to respective groups of the memory devices. A respective local clock signal has a respective phase relationship with the module clock signal and is output to a corresponding group of the memory devices that includes at least one corresponding memory device in each of the one or more ranks.

A memory module can be programmed to deliver relatively wide, low-latency data in a first access mode, or to sacrifice some latency in return for a narrower data width, a narrower command width, or both, in a second access mode. The narrow, higher-latency mode requires fewer connections and traces. A controller can therefore support more modules, and thus increased system capacity. Programmable modules thus allow computer manufacturers to strike a desired balance between memory latency, capacity, and cost.

Various implementations described herein are directed to an integrated circuit having first latch circuitry with multiple first latches that latch multiple input data signals. The integrated circuit may include second latch circuitry having a single second latch that receives the latched multiple input data signals from the multiple first latches and outputs a single latched data signal based on the latched multiple input data signals. The integrated circuit may include intermediate logic circuitry that is coupled between the first latch circuitry and the second latch circuitry. The intermediate logic circuitry may receive and combine the multiple input data signals from the first latch circuitry into a single data signal that is provided to the single second latch of the second latch circuitry for output as the single latched data signal.