Numerous embodiments of output circuitry for an analog neural memory in a deep learning artificial neural network are disclosed. In some embodiments, a common mode circuit is used with differential cells, W+ and W−, that together store a weight, W. The common mode circuit can utilize current sources, variable resistors, or transistors as part of the structure for introducing a common mode voltage bias.

A method for performing an in-memory computation includes: storing data in memory cells of a memory array, the data including weights for computation; determining whether an update command to change at least one of the weights is received; in response to receiving the update command, performing a write operation on the memory array to update the at least one weight; and disabling the write operation on the memory array until receiving a next update command to change the at least one weight.

Methods, systems, and devices for activate commands for memory preparation are described. A memory device may receive an activate command for a row of a memory bank in the memory device. The activate command may include an indicator that indicates a type of an access operation associated with the activate command. The memory device may perform, based on the type of the access operation, an operation to prepare the memory device for the access operation. The memory device may then receive an access command for the access operation after performing the operation to prepare the memory device for the access operation.

An apparatus including reconfigurable interface circuits and associated systems and methods are disclosed herein. An reconfigurable interface circuit may include an output buffer and an input buffer coupled to a connector for respectively generating and receiving signals. The reconfigurable interface circuit may include a control circuit configured to control operation of the input and output buffers along with additional circuits to selectively implement one or more from a set of selectable communication settings.

A data receiving device of a memory device comprises a first pre-amplifier configured to receive previous data, a first reference voltage, and input data, and to output differential signals by comparing the input data with the first reference voltage in response to a clock, when the first pre-amplifier is selected in response to the previous data, a second pre-amplifier configured to receive inverted previous data, a second reference voltage, different from the first reference voltage, and the input data, and outputting a common signal in response to the clock, when the second pre-amplifier is unselected in response to the previous data; and an amplifier configured to receive the differential signals and the common signal, and to latch the input data by amplifying the differential signals.

The present technology includes a memory device. The memory device includes memory cells, page buffers configured to store sensed data obtained from the memory cells, a current sensing circuit configured to compare a sensed voltage generated according to the sensed data and a reference voltage generated according to an allowable fail bit code, and output a pass signal or a fail signal according to a comparison result, and a fail bit manager configured to increase an allowable number of fail bits included in the allowable fail bit code until the pass signal is output from the current sensing circuit, change the allowable fail bit code according to the allowable number of fail bits, and provide the allowable fail bit code to the current sensing circuit.

A memory device includes: a memory cell array; a first latch; a second latch; a first circuit; and a second circuit. The memory cell array includes first, second, and third columns associated with first, second, and third addresses, respectively. The first latch stores the first address and is associated with a fourth address. The second latch stores the second address and is associated with a fifth address. The fourth address and the fifth address are in an ascending order. The first circuit selects the third column in place of the first column based on the first address. The second circuit determines whether or not the first address and the second address are in an ascending order.

A storage apparatus includes an interface and storage circuitry. The interface communicates with a plurality of memory cells, and an individual one of the plurality of memory cells stores data in multiple programming levels. The storage circuitry configured to program data to a first group of multiple memory cells in a number of programming levels larger than two, using a One-Pass Programming (OPP) scheme that results in a first readout reliability level. After programming the data, the storage circuitry is further configured to read the data from the first group, and program the data read from the first group to a second group of the memory cells, in a number of programming levels larger than two, using a Multi-Pass Programming (MPP) scheme that results in a second readout reliability higher than the first reliability level, and reading the data from the second group of the memory cells.

A method for writing to a non-volatile electronic memory with data words and assigned pieces of index information. The non-volatile electronic memory is initially filled exclusively with empty data frames. The empty data frames are overwritable with multi-data frames and/or individual data frames. A multi-data frame includes a selectable number of sequentially stored data words, and a multi-data frame header. A frame-type marker, the number of data words, and a selectable start index are stored in the multi-data frame header so that each data word is assignable a unique index value from an index interval by incrementing or decrementing. An individual data frame includes one data word and an individual data frame header. A frame-type marker and a selectable index value for the one data word of the individual data frame are stored in the individual data frame header.

Methods, systems, and devices for communicating data with stacked memory dies are described. A first semiconductor die may communicate with an external computing device using a binary-symbol signal including two signal levels representing one bit of data. Semiconductor dies may be stacked on one another and include internal interconnects (e.g., through-silicon vias) to relay an internal signal generated based on the binary-symbol signal. The internal signal may be a multi-symbol signal modulated using a modulation scheme that includes three or more levels to represent more than one bit of data. The multi-level symbol signal may simplify the internal interconnects. A second semiconductor die may be configured to receive and re-transmit the multi-level symbol signal to semiconductor dies positioned above the second semiconductor die.