A device for controlling trapped ions includes a first substrate of a semiconductor and/or dielectric material. A first metal structure is disposed at a main side of the first substrate. The device further includes a second substrate of a semiconductor and/or dielectric material. A second metal structure is disposed at a main side of the second substrate opposite the main side of the first substrate. A spacer is disposed between and bonded to the first and second substrates. The spacer includes an electrical interconnect which electrically connects the first metal structure to the second metal structure. A bond between the spacer and the first substrate or the spacer and the second substrate is a bond formed by waferbonding. At least one ion trap is configured to trap ions in a space between the first and second substrates, the first and second metal structures including electrodes of the ion trap.

A method of performing simultaneous entangling gate operations in a trapped-ion quantum computer includes selecting a gate duration value and a detuning frequency of pulses to be individually applied to a plurality of participating ions in a chain of trapped ions to simultaneously entangle a plurality of pairs of ions among the plurality of participating ions by one or more predetermined values of entanglement interaction, determining amplitudes of the pulses, based on the selected gate duration value, the selected detuning frequency, and the frequencies of the motional modes of the chain of trapped ions, generating the pulses having the determined amplitudes, and applying the generated pulses to the plurality of participating ions for the selected gate duration value. Each of the trapped ions in the chain has two frequency-separated states defining a qubit, and motional modes of the chain of trapped ions each have a distinct frequency.

A method of performing a computation using a quantum computer includes generating a plurality of laser pulses used to be individually applied to each of a plurality of trapped ions that are aligned in a first direction, each of the trapped ions having two frequency-separated states defining a qubit, and applying the generated plurality of laser pulses to the plurality of trapped ions to perform simultaneous pair-wise entangling gate operations on the plurality of trapped ions. Generating the plurality of laser pulses includes adjusting an amplitude value and a detuning frequency value of each of the plurality of laser pulses based on values of pair-wise entanglement interaction in the plurality of trapped ions that is to be caused by the plurality of laser pulses.

Aspects of the present disclosure may include a method and/or a system for biasing FOFI qubits including applying a magnetic field to one or more first order field insensitive (FOFI) qubits, wherein a first magnetic field sensitivity of the one or more FOFI qubits in a first state of a first manifold is substantially equal to a second magnetic field sensitivity of the one or more FOFI qubits in a second state of a second manifold, a global optical beam to the one or more FOFI qubits, and one or more Raman beams, wherein an application of at least one of the global optical beam or the one or more Raman beams transitions the one or more FOFI qubits from the first state to the second state.

Aspects of the present disclosure may include a method and/or a system for trap-door loading including pumping at least one qubit ion from a first manifold of a first plurality of manifolds to a second manifold of the first plurality of manifolds, drive the at least one qubit ion via a partial clock transition from the second manifold of the first plurality of manifolds to a third manifold of a second plurality of manifolds, applying one or more Raman pulses to transfer the at least one qubit ion from the third manifold of the second plurality of manifolds to a fourth manifold of the second plurality of manifolds, flushing the at least one qubit ion using a high-fidelity pumping back to the first plurality of manifolds, and illuminating the first plurality of manifolds for verification.

The disclosure describes various aspects of techniques for elliptical beam design using cylindrical optics that may be used in different applications, including in quantum information processing (QIP) systems. In an aspect, the disclosure describes an optical system having a first optical component having a first focal length, a second optical component having a second focal length and aligned with a first direction, and a third optical component having a third focal length and aligned with a second direction orthogonal to the first direction. The optical system is configured to receive one or more optical beams (e.g., circular or elliptical) and apply different magnifications in the first direction and the second direction to the one or more optical beams to image one or more elliptical Gaussian optical beams. A method for generating elliptical optical beams using a system as the one described above is also disclosed.

According to an aspect of the present disclosure, a beam control device for radiotherapy is provided. The beam control device may include an electron beam generator configured to emit an electron beam for radiotherapy toward a subject in a first direction. The beam control device may further include a first deflection device configured to generate a defocused electron beam by defocusing the electron beam in a second direction, the second direction being different from the first direction.

A microwave photon control device includes a first qubit and a second qubit that are connected in parallel to a waveguide through which microwave photons propagate, and a direct coupling between the first qubit and the second qubit. An interval between the first qubit and the second qubit is (¼+n/2) times as long as a wavelength of microwave photons (where n is an integer equal to or larger than 0). A quantum entangled state is formed between the first qubit and the second qubit. The direct coupling cancels out a coupling via the waveguide between the first qubit and the second qubit. By a relaxation rate of the first qubit and the second qubit, and a phase of the quantum entangled state being controlled, the microwave photon control device operates while switching between a first operation mode, a second operation mode, and a third operation mode.

A device for controlling trapped ions includes a substrate. A first metal layer is disposed over the substrate. An insulating layer is disposed over the first metal layer. A structured second metal layer is disposed over the insulating layer. The structured second metal layer includes an electrode of an ion trap configured to trap ions in a space above the structured second metal layer. The electrode of the structured second metal layer and the first metal layer overlap each other. The device further includes a void space in the insulating layer between the first metal layer and the electrode of the structured second metal layer, the void space including a vacuum at least during operation of the device.

Aspects of the present disclosure may include a method and/or a system for identifying an ion chain having a plurality of trapped ions, selecting at least two non-consecutive trapped ions in the ion chain for implementing a qubit, applying at least a first Raman beam to shuttle at least one neighbor ion of the at least two non-consecutive trapped ions from a ground state to a metastable state, and applying at least a second Raman beam to one or more of the at least two non-consecutive trapped ions, after shuttling the at least one neighbor ion to the metastable state, to transition from a first manifold to a second manifold.