A doubly bent X-ray spectroscopic device (1) according to the present invention includes: a glass plate (3) which is deformed into a shape having a doubly bent surface by being sandwiched between a doubly curved convex surface (21a) of a convex forming die (21) and a doubly curved concave surface (22a), of a concave forming die (22), that matches the doubly curved convex surface (21a), and being heated to a temperature of 400° C. to 600° C.; and a reflection coating (5) configured to reflect X-rays, which is formed on a concave surface (3a) of the deformed glass plate (3 ).

A reflector comprising a hollow body having an interior surface defining a passage through the hollow body, the interior surface having at least one optical surface part configured to reflect radiation and a supporter surface part, wherein the optical surface part has a predetermined optical power and the supporter surface part does not have the predetermined optical power. The reflector is made by providing an axially symmetric mandrel; shaping a part of the circumferential surface of the mandrel to form at least one inverse optical surface part that is not rotationally symmetric about the axis of the mandrel; forming a reflector body around the mandrel; and releasing the reflector body from the mandrel whereby the reflector body has an optical surface defined by the inverse optical surface part and a supporter surface part defined by the rest of the outer surface of the mandrel.

A method of manufacturing an integrated circuit (IC) device includes forming a photoresist layer on a substrate, and exposing the photoresist layer to light by using a photolithographic apparatus including a light generator. The light generator includes a chamber having a plasma generation space, an optical element in the chamber, and a debris shielding assembly between the optical element and the plasma generation space in the chamber, and the debris shielding assembly includes a protective film facing the optical element and being spaced apart from the optical element with a protective space therebetween, the protective space including an optical path, and a protective frame to support the protective film and to shield the protective space from the plasma generation space.

In a method for producing an optical element for an EUV projection exposure apparatus, a shaping layer (22.sub.1) is applied onto a substrate (20) so as to have a surface roughness of at most 0.5 nm rms directly after the application of the shaping layer onto the substrate.

A method of making a mirror for use with extreme ultraviolet or x-ray radiation includes: i) providing a base substrate having a curved surface, wherein the curved surface deviates from a curvature of a target mirror surface at high spatial frequencies corresponding to spatial periods less than 2 mm; and ii) securing a first side of a thin plate to the curved surface of the base substrate to cover the curved surface, wherein the plate has a thickness thin enough to conform to the curvature of the target mirror surface and thick enough to attenuate deviations at the high spatial frequencies on a second side of the thin plate opposite the first side that are caused by the deviations on the curved surface of the base substrate. A mirror made by the method is also disclosed.

An EUV collector has a reflection surface with a basic mirror shape of a spherical section. A diffraction grating for EUV used light is applied to the reflection surface. The diffraction grating is designed so that the EUV used light, which emanates from a sphere center of the spherical section, is diffracted by the diffraction grating toward a collection region. The collection region is spatially spaced apart from the sphere center. This creates an EUV collector in which an effective separation between EUV used light, which is to be collected with the aid of the collector, and extraneous light having a wavelength that differs from a used light wavelength is made possible.

An x-ray transmission spectrometer system to be used with a compact x-ray source to measure x-ray absorption with both high spatial and high spectral resolution. The spectrometer system comprises a compact high brightness x-ray source, an optical system with a low pass spectral filter property to focus the x-rays through an object to be examined, and a spectrometer comprising a crystal analyzer (and, in some embodiments, a mosaic crystal) to disperse the transmitted beam, and in some instances an array detector. The high brightness/high flux x-ray source may have a take-off angle between 0 and 15 degrees, and be coupled to an optical system that collects and focuses the high flux x-rays to micron-scale spots, leading to high flux density. The x-ray optical system may also act as a “low-pass” filter, allowing a predetermined bandwidth of x-rays to be observed at one time while excluding the higher harmonics.

A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

A fluorescence mode x-ray absorption spectroscopy apparatus includes an electron bombardment source of x-rays, a crystal analyzer, the source and the crystal analyzer defining a Rowland circle having a Rowland circle radius (R), a detector, and at least one stage configured to position a sample such that at least a portion of the sample is between the crystal analyzer and the detector.

A collector transfers EUV illumination light from a radiation source region to illumination optics. Imaging optics of the collector image the radiation source region in a downstream focal region. The imaging optics are embodied so that the radiation source is imaged with at least one first imaging scale by the EUV illumination light, which is emitted with beam angles <20° between the radiation source region and the downstream focal region. The imaging optics are also embodied so that the radiation source is imaged with at least one second imaging scale by the illumination light emitted with beam angles >70°. The two imaging scales for the beam angles <20° on the one hand and >70° on the other hand differ by no more than a factor of 2.5. In addition to a corresponding collector, an illumination system contains field facets transfer optics.