Discussed is a solar cell including a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

Discussed is a solar cell including a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

An outer electrode includes a glass-free sintered layer containing no glass. A glass-free conductive paste is provided and includes a conductive metal powder and a thermosetting resin, the conductive metal powder including an alloy of tin and at least one of copper and nickel, and the glass-free conductive paste containing no glass. This composition is applied to cover a portion of a surface of a ceramic body. Then the ceramic body to which the glass-free conductive paste has been applied is subjected to heat treatment at a temperature of about 600° C., higher than or equal to a temperature about 400° C. higher than the curing temperature of the thermosetting resin. By the heat treatment, the thermosetting resin is subjected to thermal decomposition or combustion and thus little of the thermosetting resin remains, and the conductive metal powder is sintered to form a unified sintered metal body.

A sensor may include a bladder, and a deformable conductor disposed on the bladder such that deformation of the bladder causes deformation of the deformable conductor, wherein the bladder is constrained so as to enhance the deformation of the conductor in response to the deformation of the bladder. A method may include applying a stimulus to a bladder having a deformable conductor attached thereto, detecting a change in an electrical characteristic associated with the deformable conductor in response to the stimulus, and selectively constraining the bladder to amplify the change in electrical characteristic in response to the stimulus.

A sensor may include a bladder, and a deformable conductor disposed on the bladder such that deformation of the bladder causes deformation of the deformable conductor, wherein the bladder is constrained so as to enhance the deformation of the conductor in response to the deformation of the bladder. A method may include applying a stimulus to a bladder having a deformable conductor attached thereto, detecting a change in an electrical characteristic associated with the deformable conductor in response to the stimulus, and selectively constraining the bladder to amplify the change in electrical characteristic in response to the stimulus.

The present disclosure discloses a low LOI tellurium-lithium-silicon-zirconium frit system and a conductive paste and application thereof, and belongs to the field of conductive paste. In the low LOI tellurium-lithium-silicon-zirconium frit system, components of the frit are 24%-40% TeO.sub.2, 18%-24% Li.sub.2O, 4%-13% SiO.sub.2, 0-2% ZrO.sub.2, and a balance MO.sub.x, and M is one or a mixture of Na, K, Mg, Ca, Sr, Ti, V, Cr, Mo, W, Mn, Cu, Ag, Zn, Cd, B, Al, Ga, Tl, Ge, Pb, P, and Bi. There is no need to add additional surfactants, a viscosity change of the conductive paste prepared after standing for 30 days is less than 20%, the conductive paste has good stability, the water related weight loss of inorganic oxide of the conductive paste is less than 1.6%, and the application performance of the conductive paste is not affected after standing for 30 days.

The present disclosure relates to a silver powder preparation method comprising: a silver powder preparation step of preparing a silver salt, which comprises silver ions, and then reducing the silver ion so as to precipitate silver particles; a silver powder recovery step of separating silver particles from an aqueous solution or a slurry, which comprises the precipitated silver particles, and then washing and drying same to recover silver powder; and a silver powder coating step of injecting a pH adjuster into the recovered silver powder to adjust the pH, and then injecting a coating agent to coat after the pH adjustment. The pH adjuster is used in the silver powder coating step to adjust the pH, and thus, when silver power is used in a conductive paste, as the rate of change in viscosity over time is low, a conductive paste having excellent viscosity stability can be provided.

A conductive paste includes: a solder powder having a melting point of less than or equal to 120° C.; a conductive filler; a flux for removing an oxide film of the solder powder; and a solvent, wherein a ratio of a mass of the conductive filler to a mass of the solder powder is 20% to 80%.

A conductive paste includes: a solder powder having a melting point of less than or equal to 120° C.; a conductive filler; a flux for removing an oxide film of the solder powder; and a solvent, wherein a ratio of a mass of the conductive filler to a mass of the solder powder is 20% to 80%.

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the melted low melting point eutectic alloy flows to occupy spaces between the annealed silver nanoparticles, d) allowing the melted low melting point eutectic alloy of the hybrid conductive ink to harden and fuse to the electronic component and the conductive element, thereby forming an interconnect. Electrical circuits including conductive traces and, optionally, interconnects formed with the hybrid conductive ink are also provided.