The chip resistor according to the present disclosure includes insulating substrate, a pair of upper face electrodes provided on both ends of one face of insulating substrate, and resistor provided on the one face of insulating substrate and connected between the pair of upper face electrodes. The chip resistor includes a pair of end-face electrodes provided on both end faces of insulating substrate to be electrically connected to the pair of upper face electrodes, and plating layer formed on portions of the pair of upper face electrodes and faces of the pair of end-face electrodes. Insulating film formed of a resin is provided on another face opposite to the one face of insulating substrate. Insulating film has a thickness of more than or equal to 30 m.

The chip resistor according to the present disclosure includes insulating substrate, a pair of upper face electrodes provided on both ends of one face of insulating substrate, and resistor provided on the one face of insulating substrate and connected between the pair of upper face electrodes. The chip resistor includes a pair of end-face electrodes provided on both end faces of insulating substrate to be electrically connected to the pair of upper face electrodes, and plating layer formed on portions of the pair of upper face electrodes and faces of the pair of end-face electrodes. Insulating film formed of a resin is provided on another face opposite to the one face of insulating substrate. Insulating film has a thickness of more than or equal to 30 m.

A frequency modulated continuous wave (FMCW) light detection and ranging (LIDAR) system that includes an optical source to generate light at a target frequency. The system also includes a first transistor to transmit a modulation current through a modulation path that includes the optical source and a modulation resistor. The system also includes electro optical circuitry coupled to the first transistor to produce a phase locked loop. The system also includes a second transistor to transmit a bias current through a bias path that includes the optical source and is separate from the modulation path, wherein the bias path is separate from the modulation path.

A frequency modulated continuous wave (FMCW) light detection and ranging (LIDAR) system that includes an optical source to generate light at a target frequency. The system also includes a first transistor to transmit a modulation current through a modulation path that includes the optical source and a modulation resistor. The system also includes electro optical circuitry coupled to the first transistor to produce a phase locked loop. The system also includes a second transistor to transmit a bias current through a bias path that includes the optical source and is separate from the modulation path, wherein the bias path is separate from the modulation path.

The chip resistor according to the present disclosure includes insulating substrate, a pair of upper face electrodes provided on both ends of one face of insulating substrate, and resistor provided on the one face of insulating substrate and connected between the pair of upper face electrodes. The chip resistor includes a pair of end-face electrodes provided on both end faces of insulating substrate to be electrically connected to the pair of upper face electrodes, and plating layer formed on portions of the pair of upper face electrodes and faces of the pair of end-face electrodes. Insulating film formed of a resin is provided on another face opposite to the one face of insulating substrate. Insulating film has a thickness of more than or equal to 30 m.

The chip resistor according to the present disclosure includes insulating substrate, a pair of upper face electrodes provided on both ends of one face of insulating substrate, and resistor provided on the one face of insulating substrate and connected between the pair of upper face electrodes. The chip resistor includes a pair of end-face electrodes provided on both end faces of insulating substrate to be electrically connected to the pair of upper face electrodes, and plating layer formed on portions of the pair of upper face electrodes and faces of the pair of end-face electrodes. Insulating film formed of a resin is provided on another face opposite to the one face of insulating substrate. Insulating film has a thickness of more than or equal to 30 m.

An Al.sub.2O.sub.3 carrier has a thin-film structure of platinum or a platinum alloy arranged thereon. The carrier and/or the thin-film structure are adapted to reduce mechanical stresses owing to different thermal expansion coefficients. The carrier and/or the thin-film structure include a surface of the carrier in the region of the thin-film structure is smoothed at least in sections to reduce the adhesion and/or a surface of the carrier has an intermediate layer on which the thin-film structure is arranged. The thermal expansion coefficient of the intermediate layer is from 8*10.sup.6/K to 16*10.sup.6/K, in particular from 8.5*10.sup.6/K to 14*10.sup.6/K, and/or the thin-film structure has at least one conductor path that is undular at least in sections, said conductor path extends laterally along the surface of the carrier.

An Al.sub.2O.sub.3 carrier has a thin-film structure of platinum or a platinum alloy arranged thereon. The carrier and/or the thin-film structure are adapted to reduce mechanical stresses owing to different thermal expansion coefficients. The carrier and/or the thin-film structure include a surface of the carrier in the region of the thin-film structure is smoothed at least in sections to reduce the adhesion and/or a surface of the carrier has an intermediate layer on which the thin-film structure is arranged. The thermal expansion coefficient of the intermediate layer is from 8*10.sup.6/K to 16*10.sup.6/K, in particular from 8.5*10.sup.6/K to 14*10.sup.6/K, and/or the thin-film structure has at least one conductor path that is undular at least in sections, said conductor path extends laterally along the surface of the carrier.

A chip resistor according to the present invention includes an insulating substrate, a pair of back surface electrodes, a pair of top surface electrodes, a resistor, and a pair of end face electrodes. The back surface electrode includes the first electrode portion located inwardly and away from the end face of the insulating substrate, and the two second electrode portions arranged on two portions, respectively, in the short direction of the insulating substrate with the cutout portion, which is positioned between the end face of the insulating substrate and the first electrode portion, being interposed therebetween, and the maximum height of the first electrode portion is set to be more than the maximum height of the second electrode portions.

Surface-mountable conductive polymer devices include a conductive polymer layer between first and second electrodes, on which are disposed first and second insulation layers, respectively. First and second planar conductive terminals are on the second insulation layer. A first cross-conductor connects the second electrode to the first terminal, and is separated from the first electrode by a portion of the first insulation layer. A second cross-conductor connects the first electrode to the second terminal, and is separated from the second electrode by a portion of the second insulation layer. In some embodiments, at least one cross-conductor includes a beveled portion through the first insulation layer to provide enhanced adhesion between the cross-conductor and the first insulation layer, while allowing greater thermal expansion without undue stress. In other embodiments, these advantages are achieved by having at least one cross-conductor in physical contact with a metallized anchor pad on the first insulation layer.