A method is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) device. A TFR film is formed and annealed over an IC structure including IC elements and IC element contacts. At least one TFR cap layer is formed, and a TFR etch defines a TFR element from the TFR film. A TFR contact etch forms TFR contact openings over the TFR element, and a metal layer is formed over the IC structure and extending into the TFR contact openings to form metal contacts to the IC element contacts and the TFR element. The TFR cap layer(s), e.g., SiN cap and/or oxide cap formed over the TFR film, may (a) provide an etch stop during the TFR contact etch and/or (b) provide a hardmask during the TFR etch, which may eliminate the use of a photomask and thereby eliminate post-etch removal of photomask polymer.

A heating plate 10 includes: a pair of glass plates 11, 12; a conductive pattern 40, 70 disposed between the pair of glass plates 11, 12 and defining a plurality of opening areas 43, 73; and a joint layer 13, 14 disposed between the conductive pattern 40, 70 and at least one of the pair of glass plates 11, 12; wherein the conductive pattern 40, 70 includes a plurality of connection elements 44, 74 that extend between two branch points 42, 72 to define the opening areas 43, 73; and a total value of lengths of straight line segments connecting the two branch points 42, 72 is less than 20% of a total value of the plurality of connection elements 44, 74.

A modulated inductance module includes an inductor including one or more electrical conductors disposed around a ferromagnetic ceramic element formed on a semiconductor die, wherein the inductor further has two or more metal oxides having fluctuations in metal-oxide compositional uniformity less than or equal to 1.50 mol % throughout said ceramic element, the ceramic element has crystalline grain structure having a diameter that is less than or equal to 1.5× a mean grain diameter, and the semiconductor die contains active semiconductor switches or rectifying components that are in electrical communication with the one or more electrical conductors of the inductor.

A method for manufacturing an electronic component includes providing a substrate and a functional layer supported by the substrate; forming a structured protection layer on a side of the substrate to which the functional layer is attached, wherein the structured protection layer has a recess so that a portion of the functional layer is exposed; applying a dispersion comprising a solvent and electrically conductive components to the exposed portion of the functional layer so that the recess is at least partially filled with the dispersion; drying the dispersion in order to create an electrically conductive layer; and removing the structured protection layer.

A heating plate includes: a pair of glass plates; a conductive pattern disposed between the pair of glass plates and defining a plurality of opening areas; and a joint layer disposed between the conductive pattern and at least one of the pair of glass plates; wherein the conductive pattern includes a plurality of connection elements that extend between two branch points to define the opening areas; and a rate of the connection elements, which are straight line segments connecting the two branch points, relative to the plurality of connection elements, is less than 20%.

A method for manufacturing an electronic component includes providing a substrate and a functional layer supported by the substrate; forming a structured protection layer on a side of the substrate to which the functional layer is attached, wherein the structured protection layer has a recess so that a portion of the functional layer is exposed; applying a dispersion comprising a solvent and electrically conductive components to the exposed portion of the functional layer so that the recess is at least partially filled with the dispersion; drying the dispersion in order to create an electrically conductive layer; and removing the structured protection layer.

The invention discloses a thin film transistor, a display panel and a method of fabricating the thin film transistor. The thin film transistor includes a substrate, a flat film, a dielectric layer, an active layer, and a source/drain layer which are stacked in sequence from bottom to top; and a plurality of reinforcing portions are disposed on an upper surface of the flat film, wherein the flat film and the reinforcing portions constitute a gate layer, wherein the reinforcing portions are configured to increase an area of the upper surface of the flat film, so as to increase an effective overlapping area between the flat film and the active layer, and reduce a width and a length of the thin film transistor.

A method for mass-manufacturing of a miniature resistor includes the steps of: providing a foil sheet; forming intersecting rows of slits to define a patterned foil sheet having a matrix array of resistor blanks that are interconnected at intersections of the intersecting rows; forming first and second photoresist films on the patterned foil sheet; forming holes in the first photoresist film; forming protruding blocks to fill the holes; removing the first and second photoresist films; encapsulating the patterned foil sheet and the protruding blocks without covering outer surfaces of the protruding blocks; performing a cutting process to obtain individual resistor blanks; and forming two external electrodes respectively on the protruding blocks and on two side surfaces of the individual resistor blank to obtain the miniature resistor.

A thin-film resistor and a method for fabricating a thin-film resistor are provided. The thin-film resistor comprises a first terminal, a second terminal, and a resistor body providing a resistive current path between the first terminal and the second terminal, and the method comprises depositing a first layer of conductive material onto at least one of the supporting structure and the resistor body, applying a first lithographic mask to the first layer, and etching the first layer to form the first terminal; and depositing a second layer of conductive material onto at least one of the supporting structure and the resistor body, applying a second lithographic mask to the second layer, and etching the second layer to form the second terminal, wherein the first lithographic mask is different to the second lithographic mask, and a lateral separation of the first terminal and the second terminal is less than an in-plane minimum feature size of the first and second lithographic masks

A thin-film integrated circuit comprising a first semiconductor device, a second semiconductor device, a first resistor, and a second resistor is provided. A semiconducting region of the first semiconductor device, a resistor body of the first resistor, a semiconducting region of the second semiconductor device, and a resistor body of the second resistor are formed from at least one of a first source material and a second source material, and a material of the resistor body of the first resistor and a material of the resistor body of the second resistor have different electrical properties.