A resistor is provided with a resistance body and a pair of electrodes connected to the resistance body (a first electrode body, a second electrode body), the resistance body being arranged so as to be at least separated away from a substrate board (a circuit board) when mounted on the substrate board (the circuit board), wherein the resistor has the oxide film on at least one of the resistance body and each of the electrodes (the first electrode body, the second electrode body) at a boundary portion (a bonded portion, a bonded portion) between the resistance body and each of the electrodes (the first electrode body, the second electrode body) on the mounting surface of the resistor.

The resistor includes a chip resistive element which includes a resistive element and metal electrodes and which is formed on first surface of a ceramic substrate, metal terminals electrically joined to the metal electrodes, and an Al member formed on the second surface side of the ceramic substrate, wherein the ceramic substrate and the Al member are joined using an Al—Si-based brazing filler metal, the metal electrodes and the metal terminals are joined to each other using a solder, and a degree of bending of an opposite surface of the Al member opposite to a surface on the ceramic substrate side is in a range of −30 μm/50 mm to 700 μm/50 mm.

A resistance element includes a plurality of resistance chips stacked vertically, each of the plurality of resistance chips including a semiconductor substrate, one or more resistance layers on a field insulating film, a pad forming electrode on electrically connected to the one or more resistance layers, a relay wiring on the interlayer insulating film, laterally separated from the pad forming electrode, electrically connected to another end of at least one of the one or more resistance layers on one end and to a semiconductor substrate on another end, and a back surface electrode at a bottom of the semiconductor substrate, making ohmic contact with the semiconductor substrate, wherein the plurality of resistance chips have the same planar outer shape, and are stacked one over another so as to constitute a resistor as a whole.

A chip resistor including: a rectangular parallelepiped insulating substrate; a strip-shaped resistor; a pair of front electrodes formed on a front surface of the resistor at both ends in the longitudinal direction; an insulating protective layer; and a pair of end face electrodes formed at both ends of the insulating substrate in the longitudinal direction, each of which is connected to each end face of the resistor, corresponding one of the front electrodes, and protective film; and a pair of external electrodes, wherein a cross-sectional shape of each of the front electrodes is almost a triangle in which a side of the end face has a maximum height, and a shape of an end face of each of the end face electrodes is almost a square.

Resistive elements are formed in belt shape in regions sandwiched between secondary division prediction lines set onto a large substrate and extending in a direction orthogonal to primary division prediction lines, a plurality of front electrodes disposed facing each other at predetermined intervals on the resistive elements are formed so as to be across the primary division prediction lines, a glass coat layer covering each of the resistive elements and extending in the direction orthogonal to the secondary division prediction lines is formed, a resin coat layer covering an entire surface of the large substrate from a top of the glass coat layer is formed, and after that, the large substrate is diced along the primary division prediction lines and the secondary division prediction lines to obtain individual chip base bodies.

A thermistor-based thermal probe includes a thermistor die having a thermistor thereon with first and second bond pads coupled across the thermistor, and first and second die interconnects coupled to the respective bond pads. First and second wires W1, W2 that extend beyond the thermistor die are attached to the first and to the second die interconnects, respectively. An encapsulant material encapsulates the thermistor die and a die end of the first and second wires.

An over-current protection device comprises first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer comprises a polymer matrix, a conductive ceramic filler, a carbon- containing conductive filler, and an inner filler. The polymer matrix comprises a fluoropolymer having a melting point higher than 150° C. The inner filler is selected from one of aluminum nitride, silicon carbide, zirconium oxide, boron nitride, graphene, aluminum oxide, or any mixtures thereof, and comprises 2-10% by volume of the PTC material layer. The over-current protection device is able to mitigate negative temperature coefficient (NTC) behavior after trip of device, and achieves high hold current and high endurable power.

An over-current protection device comprises first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer comprises a polymer matrix, a conductive ceramic filler, a carbon-containing conductive filler, and an inner filler. The polymer matrix comprises a fluoropolymer having a melting point higher than 150° C. The inner filler is selected from one of aluminum nitride, silicon carbide, zirconium oxide, boron nitride, graphene, aluminum oxide, or any mixtures thereof, and comprises 2-10% by volume of the PTC material layer. The over-current protection device is able to mitigate negative temperature coefficient (NTC) behavior after trip of device, and achieves high hold current and high endurable power.

A semiconductor device includes an insulating layer, a first conductive film, a second conductive film and a thin-film resistor. The insulating layer has a penetrating portion. The first conductive film is formed in the penetrating portion such that a recess is formed at an upper part of the penetration portion. The second conductive film is formed on an upper surface of the first conductive film and an inner surface of the penetrating portion. The thin-film resistor includes silicon and metal. The thin-film resistor is formed on the second conductive film and the insulating layer.

A thermistor chip is provided, which includes a thermosensitive ceramic substrate, a surface electrode and a bottom electrode. The surface electrode and the bottom electrode are respectively arranged on the two surfaces of the thermosensitive ceramic substrate. The surface electrode is a silver layer. The bottom electrode consists of a silver layer, a titanium-tungsten alloy layer, a copper layer and a gold layer, laminating on the thermosensitive ceramic substrate in turn from inside to outside. A preparation method thereof is also provided. The thermistor chip can meet the requirements of both solder paste reflow soldering and wire bonding process simultaneously, and has the advantages of good bonding effect and high temperature resistance, high reliability and high stability.