A film stack made from compacted green films and capable of being sintered to form a ceramic component with monolithic multi-layer structure is disclosed. The film stack includes a functional layer comprising a green film comprising a functional ceramic and a tension layer comprising a green film comprising a dielectric material. The tension layer is directly adjacent to the functional layer in the multi-layer structure. The multilayer structure also includes a first metallization plane and second metallization plane. The functional layer is between the first metallization plane and the second metallization plane.

A film stack made from compacted green films and capable of being sintered to form a ceramic component with monolithic multi-layer structure is disclosed. The film stack includes a functional layer comprising a green film comprising a functional ceramic and a tension layer comprising a green film comprising a dielectric material. The tension layer is directly adjacent to the functional layer in the multi-layer structure. The multilayer structure also includes a first metallization plane and second metallization plane. The functional layer is between the first metallization plane and the second metallization plane.

An aircraft heated floor panel includes a first face sheet, a second face sheet opposite the first face sheet, and core with an electrically conductive core portion. The electrically conductive core portion supports the first face sheet and the second face sheet, and is electrically insulated from the external environment to receive electrical power, resistively generate heat, and communicate heat to the first face sheet.

An aircraft heated floor panel includes a first face sheet, a second face sheet opposite the first face sheet, and core with an electrically conductive core portion. The electrically conductive core portion supports the first face sheet and the second face sheet, and is electrically insulated from the external environment to receive electrical power, resistively generate heat, and communicate heat to the first face sheet.

A three-dimensional thermistor device and a manufacturing method thereof. The three-dimensional thermistor device comprising a thermistor array formed on a base layer extending in first and second directions. Where the thermistor array comprises: thermistor pattern layers and insulating layers stacked alternately on the base layer in a third direction; each thermistor pattern layer including a continuous electrically conductive first trace disposed along a first path extending in both the first and second directions, and each insulating layer including an electrically conductive first via extending through the insulating layer in the third direction to electrically connect the first traces to each other. Where successive electrical connections between the respective first vias on the stacked insulating layers and the respective first traces on the stacked thermistor layers form a continuous electrical first thermistor element extending in the first, second and third directions across multiple of the thermistor pattern layers.

A three-dimensional thermistor device and a manufacturing method thereof. The three-dimensional thermistor device comprising a thermistor array formed on a base layer extending in first and second directions. Where the thermistor array comprises: thermistor pattern layers and insulating layers stacked alternately on the base layer in a third direction; each thermistor pattern layer including a continuous electrically conductive first trace disposed along a first path extending in both the first and second directions, and each insulating layer including an electrically conductive first via extending through the insulating layer in the third direction to electrically connect the first traces to each other. Where successive electrical connections between the respective first vias on the stacked insulating layers and the respective first traces on the stacked thermistor layers form a continuous electrical first thermistor element extending in the first, second and third directions across multiple of the thermistor pattern layers.

A film resistor and a film sensor are disclosed. In an embodiment a film resistor includes a piezoresistive layer comprising a M.sub.1+nAX.sub.n phase, wherein M comprises at least one transition metal, A comprises a main-group element, and X comprises carbon and/or nitrogen, and wherein n=1, 2 or 3.

An apparatus for treating a substrate is provided. The apparatus includes: a support member provided in a process chamber and configured to support the substrate; and a heater heating element provided in the support member and configured to heat the substrate, wherein at least a part of the heater heating element comprises a first region to which a laser trimming process is applied, at least another part of the heater heating element comprises a second region on which a resistance adjusting material layer is implemented by an electrolytic plating process, and the amount of heat generated in the first region that is at least a part of the heater heating element is increased by performing the laser trimming process and the amount of heat generated in the second region that is at least another part of the heater heating element is decreased by forming the resistance adjusting material layer.

An apparatus for treating a substrate is provided. The apparatus includes: a support member provided in a process chamber and configured to support the substrate; and a heater heating element provided in the support member and configured to heat the substrate, wherein at least a part of the heater heating element comprises a first region to which a laser trimming process is applied, at least another part of the heater heating element comprises a second region on which a resistance adjusting material layer is implemented by an electrolytic plating process, and the amount of heat generated in the first region that is at least a part of the heater heating element is increased by performing the laser trimming process and the amount of heat generated in the second region that is at least another part of the heater heating element is decreased by forming the resistance adjusting material layer.

Embodiments of present invention provide a resistor structure. The resistor structure includes a first layer of electrically insulating material; and a second layer of resistive material directly adjacent to the first layer, wherein thermal conductivity of the first layer is equal to or larger than 100 W/m/K. In one embodiment, the first layer of electrically insulating material has a band gap equal to or larger than 4 eV and is selected from a group consisting of aluminum-nitride (AlN), boron-nitride (BN), and diamond (C).